US5578872A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Planar contact with a void
Assignee: STMicroelectronics lnc USA
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Filing: 1995-04-07
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Granted: 1996-11-26
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Expires: 2015-04-07
Abstract
Abstract A method is provided for patterning a submicron semiconductor layer of an integrated circuit, and an integrated circuit formed according to the same. A first conductive structure is formed over the integrated circuit. A dielectric is formed over the first conductive structure having a contact opening exposing a portion of the underlying first conductive layer. A barrier layer is formed in the bottom of the contact opening. A second, substantially conformal conductive layer is formed by chemical vapor deposition over the dielectric layer; along the sidewalls and in the bottom of the contact opening. A third conductive layer is then formed over the second conductive layer wherein the third conductive layer does not fill the contact opening. The second and third conductive layers are etched to form an interconnect substantially over the contact opening.
Inventors
- 👤 Fusen E. Chen
- 👤 Girish A. Dixit
- 👤 Robert O. Miller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 14:38
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/056; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
98 words
A structure consisting of a portion of a semiconductor device, comprising: a dielectric layer having a contact opening therethrough exposing a portion of an underlying conductive structure; a barrier layer in the bottom of the contact opening; a first conductive layer disposed over a portion of the dielectric layer, along the sidewalls of the contact opening and in the bottom of the opening; and a second conductive layer disposed over the first conductive layer wherein the second conductive layer does not fill the contact opening, leaving a void between the first and second conductive layers within the opening.
Claim 2
Dependent Claim
98 words
A structure consisting of a portion of a semiconductor device, comprising: a dielectric layer having a contact opening therethrough exposing a portion of an underlying conductive structure; a barrier layer in the bottom of the contact opening; a first conductive layer disposed over a portion of the dielectric layer, along the sidewalls of the contact opening and in the bottom of the opening; and a second conductive layer disposed over the first conductive layer wherein the second conductive layer does not fill the contact opening, leaving a void between the first and second conductive layers within the opening.
Claim 3
Dependent Claim
13 words
The structure of claim 1, wherein the contact opening is substantially moisture free.
Claim 4
Dependent Claim
13 words
The structure of claim 1, wherein the barrier layer comprises a refractory metal.
Claim 5
Dependent Claim
12 words
The structure of claim 3, wherein the refractory metal layer comprises titanium.
Claim 6
Dependent Claim
14 words
The structure of claim 1, wherein the barrier layer comprises a refractory metal nitride.
Claim 7
Dependent Claim
14 words
The structure of claim 5, wherein the refractory metal nitride layer comprises titanium nitride.
Claim 8
Dependent Claim
17 words
The structure of claim 1, wherein the first conductive layer is a chemical vapor deposited refractory metal.
Claim 9
Dependent Claim
11 words
The structure of claim 7, wherein the refractory metal comprises tungsten.
Claim 10
Dependent Claim
12 words
The structure of claim 1, wherein the second conductive layer comprises aluminum.
Claim 11
Dependent Claim
125 words
An interconnect structure in an integrated circuit device, comprising: a conductive structure; an insulating layer overlying the conductive structure and having an opening therethrough to expose a portion of the conductive structure; a conformal conductive layer overlying the exposed portion of the conductive structure, sidewalls of the opening, and a portion of the insulating layer, wherein the conformal conductive layer has a thickness sufficient to define a space within the opening; and an aluminum layer on portions of the conformal conductive layer which overly the insulating layer, wherein the aluminum layer bridges over the opening to define a void, between the aluminum layer and the conformal conductive layer, in the opening; wherein the conformal conductive layer and the aluminum layer are patterned to define interconnect.
Claim 12
Dependent Claim
125 words
An interconnect structure in an integrated circuit device, comprising: a conductive structure; an insulating layer overlying the conductive structure and having an opening therethrough to expose a portion of the conductive structure; a conformal conductive layer overlying the exposed portion of the conductive structure, sidewalls of the opening, and a portion of the insulating layer, wherein the conformal conductive layer has a thickness sufficient to define a space within the opening; and an aluminum layer on portions of the conformal conductive layer which overly the insulating layer, wherein the aluminum layer bridges over the opening to define a void, between the aluminum layer and the conformal conductive layer, in the opening; wherein the conformal conductive layer and the aluminum layer are patterned to define interconnect.
Claim 13
Dependent Claim
12 words
The structure of claim 10, wherein the void is substantially moisture free.
Claim 14
Dependent Claim
17 words
The structure of claim 10, wherein the conformal conductive layer is a chemical vapor deposited refractory metal.
Claim 15
Dependent Claim
11 words
The structure of claim 12, wherein the refractory metal comprises tungsten.
Claim 16
Dependent Claim
12 words
The structure of claim 10, wherein the second conductive layer comprises aluminum.
Claim 17
Dependent Claim
23 words
The structure of claim 10, further comprising: a barrier layer between the exposed portion of the conductive structure and the conformal conductive structure.
Claim 18
Dependent Claim
13 words
The structure of claim 15, wherein the barrier layer comprises a refractory metal.
Claim 19
Dependent Claim
12 words
The structure of claim 16, wherein the refractory metal layer comprises titanium.
Claim 20
Dependent Claim
14 words
The structure of claim 15, wherein the barrier layer comprises a refractory metal nitride.
Claim 21
Dependent Claim
13 words
The structure of claim 18, wherein the refractory metal layer comprises titanium nitride.
Claim 22
Dependent Claim
15 words
The structure of claim 10, wherein the conformal conductive layer comprises a refractory metal silicide.
Claim 23
Dependent Claim
13 words
The structure of claim 20, wherein the conformal conductive layer comprises tungsten silicide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-11-26 | 2000-05-27 | 2000-11-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-11-26 | 2004-05-27 | 2004-11-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-11-26 | 2008-05-27 | 2008-11-26 | $7700.00 | Window Closed / Lapsed |