Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To make a metal wiring layer distant from a semiconductor board so as to restrain a mutual diffusion from taking place between them and to obtain a semiconductor device free of a junction leakage by a method wherein a base layer of specific material is formed on a barrier metal layer on the base of a contact hole, where no mutual diffusion takes place between the specific material concerned and the barrier metal layer. CONSTITUTION:A contact hole is filled with a silicon oxide film 7, and an AlCu wiring 8 is formed thereon. The silicon oxide film 7 is newly provided, whereby the wiring is prevented from coming into direct contact with a TiN 4 of barrier metal formed on the base of the contact hole. The silicon oxide film 7 does not react with an Si substrate 1 even if it is thermally treated as kept in contact with the substrate 1, so that alloy spikes are prevented from occurring. Therefore, even if the TiN 4 is formed thin so as to improve the density of components or to make a contact hole small, alloy spikes are prevented from occurring through the intermediary of the TiN 4 formed on the base of a contact hole.

Inventors

• 👤 Akihiko Osaki
• 👤 明彦 大崎

Bibliographic Details