Patent US5573972A successfully refreshed from Google Patents.
US5573972A
Expired / Lapsed
US
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Method for manufacturing a silicon bonded wafer
Assignee: NEC Corp
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Filing: 1995-07-28
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Granted: 1996-11-12
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Expires: 2015-07-28
Abstract
Abstract A method for manufacturing a silicon bonded wafer includes the steps of preparing a first substrate of a lightly doped N-silicon having a plurality of V-grooves, preparing a second substrate of a heavily doped N-silicon having a first portion covered by an insulating film and a second portion having a top surface flush with the surface of the insulating film, bonding the first and the second substrates such that the V-grooves are located on the insulating film of the first portion of the second substrate, and grinding the first substrate at the back surface to provide a bonded wafer having a main surface exposing therein the bottom of the grooves. The grooves separate the bonded wafer into a power element forming region and a plurality of control circuit forming regions. The inverted V-grooves reduces less amount of areas for forming the control elements.
Inventors
- 👤 Kenya Kobayashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 09:17
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10P90/1914; H10W10/041; H10W10/40; Y; Y10; Y10S; Y10S148/00; Y10S148/012
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
180 words
A method for manufacturing a silicon bonded wafer including the steps of: preparing a first silicon substrate having a first silicon surface and a second silicon surface opposing the first silicon surface, the first silicon surface having at least one groove therein, at least the surface of the groove being covered by an insulator; preparing a second silicon substrate having a third silicon surface and a fourth silicon surface opposing the third silicon surface, the third silicon surface having a first portion covered by an insulating film and a second portion exposing a silicon surface, the surface of the insulating film being flush with the surface of the second portion; bonding said first silicon substrate and said second silicon substrate together such that a portion of the first silicon surface contacts the exposed silicon surface and such that the groove is located on the surface of the insulating film; grinding said first silicon substrate at the side of the second surface thereof to provide a fifth surface exposing therein the insulator of the groove through the bottom of the groove.
Claim 2
Independent Claim
180 words
A method for manufacturing a silicon bonded wafer including the steps of: preparing a first silicon substrate having a first silicon surface and a second silicon surface opposing the first silicon surface, the first silicon surface having at least one groove therein, at least the surface of the groove being covered by an insulator; preparing a second silicon substrate having a third silicon surface and a fourth silicon surface opposing the third silicon surface, the third silicon surface having a first portion covered by an insulating film and a second portion exposing a silicon surface, the surface of the insulating film being flush with the surface of the second portion; bonding said first silicon substrate and said second silicon substrate together such that a portion of the first silicon surface contacts the exposed silicon surface and such that the groove is located on the surface of the insulating film; grinding said first silicon substrate at the side of the second surface thereof to provide a fifth surface exposing therein the insulator of the groove through the bottom of the groove.
Claim 3
Dependent Claim
31 words
A method for manufacturing a silicon bonded wafer as defined in claim 1 wherein said first and second silicon substrate are a lightly doped substrate and a heavily doped substrate, respectively.
Claim 4
Dependent Claim
21 words
A method for manufacturing a silicon bonded wafer as defined in claim 1 wherein the groove has a shape of V-character.
Claim 5
Dependent Claim
22 words
A method for manufacturing a silicon bonded wafer as defined in claim 3 wherein the groove is filled with a polycrystalline silicon.
Claim 6
Dependent Claim
21 words
A method for manufacturing a silicon bonded wafer as defined in claim 1 wherein the groove has a shape of U-character.
Claim 7
Dependent Claim
21 words
A method for manufacturing a silicon bonded wafer as defined in claim 5 wherein the groove is filled with the insulator.
Claim 8
Dependent Claim
24 words
A method for manufacturing a silicon bonded wafer as defined in claim 6 wherein the groove has a depth smaller than about 10 μm.
Claim 9
Independent Claim
209 words
A method for manufacturing a composite semiconductor device having a lateral transistor section and a vertical transistor section, comprising the steps of: preparing a first substrate having a first surface and a second surface opposing the first surface, the first surface having at least one groove therein, at least the surface of the groove being covered by an insulator; preparing a second substrate having a third surface and a fourth surface opposing the third surface, the third surface having a first portion covered by an insulating film and a second portion exposing a substrate material surface, the surface of the insulating film being flush with the surface of the second portion; bonding said first substrate and said second substrate together, oriented such that a substrate material portion of the first surface contacts the exposed substrate material surface of the third surface and the groove is located on the surface of the insulating film; grinding said first silicon substrate at the side of the second surface thereof to provide a fifth surface exposing therein the insulator of the groove through the bottom of the groove, thereby forming at least one said vertical transistor section and at least one said lateral transistor section which is insulated from said vertical transistor section.
Claim 10
Independent Claim
209 words
A method for manufacturing a composite semiconductor device having a lateral transistor section and a vertical transistor section, comprising the steps of: preparing a first substrate having a first surface and a second surface opposing the first surface, the first surface having at least one groove therein, at least the surface of the groove being covered by an insulator; preparing a second substrate having a third surface and a fourth surface opposing the third surface, the third surface having a first portion covered by an insulating film and a second portion exposing a substrate material surface, the surface of the insulating film being flush with the surface of the second portion; bonding said first substrate and said second substrate together, oriented such that a substrate material portion of the first surface contacts the exposed substrate material surface of the third surface and the groove is located on the surface of the insulating film; grinding said first silicon substrate at the side of the second surface thereof to provide a fifth surface exposing therein the insulator of the groove through the bottom of the groove, thereby forming at least one said vertical transistor section and at least one said lateral transistor section which is insulated from said vertical transistor section.
Claim 11
Dependent Claim
76 words
A method of manufacturing a composite semiconductor device as defined in claim 8 wherein said step of preparing a first substrate comprises the steps of: forming said at least one groove in said first surface; forming said insulator on said first surface and said at least one groove so that the groove is filled; grinding and polishing said insulator to expose said first surface and leave portions of said insulator in said at least one groove.
Claim 12
Dependent Claim
85 words
A method of manufacturing a composite semiconductor device as defined in claim 8 wherein said step of preparing a first substrate comprises the steps of: forming said at least one groove in said first surface; forming said insulator on said first surface and said at least one groove; forming a polysilicon layer on said insulator; grinding and polishing said polysilicon layer and said insulator to expose said first surface and leave portions of said polysilicon layer and said insulator in said at least one groove.
Claim 13
Dependent Claim
83 words
A method of manufacturing a composite semiconductor device as defined in claim 9 wherein said step of preparing a second substrate comprises the steps of: forming said first portion of said third surface to be a flat recess; forming said insulating film on said first portion and said second portion of said third surface; grinding and polishing said insulating film so that said third surface has said first portion covered by said insulating film and said second portion exposing said substrate material surface.
Claim 14
Dependent Claim
30 words
A method of manufacturing a composite semiconductor device as defined in claim 11 wherein said first and second substrate are a lightly doped substrate and a heavily doped substrate, respectively.
Claim 15
Dependent Claim
21 words
A method for manufacturing a composite semiconductor device as defined in claim 10 wherein the groove has a shape of V-character.
Claim 16
Dependent Claim
21 words
A method for manufacturing a composite semiconductor device as defined in claim 9 wherein the groove has a shape of U-character.
Claim 17
Independent Claim
172 words
A method for manufacturing a bonded wafer, comprising the steps of: preparing a first substrate having a first semiconductor surface and a second surface opposing the first surface, the first surface having at least one groove therein, at least the surface of the groove being covered by an insulator; preparing a second substrate having a third surface and a fourth surface opposing the third surface, the third surface having a first portion covered by an insulating film and a second portion exposing a substrate material surface, the surface of the insulating film being flush with the surface of the second portion; bonding said first substrate and said second substrate together, oriented such that a portion of the first semiconductor surface contacts the exposed substrate material surface of the third surface and the groove is located on the surface of the insulating film; grinding said first substrate at the side of the second surface thereof to provide a fifth surface exposing therein the insulator of the groove through the bottom of the groove.
Claim 18
Independent Claim
172 words
A method for manufacturing a bonded wafer, comprising the steps of: preparing a first substrate having a first semiconductor surface and a second surface opposing the first surface, the first surface having at least one groove therein, at least the surface of the groove being covered by an insulator; preparing a second substrate having a third surface and a fourth surface opposing the third surface, the third surface having a first portion covered by an insulating film and a second portion exposing a substrate material surface, the surface of the insulating film being flush with the surface of the second portion; bonding said first substrate and said second substrate together, oriented such that a portion of the first semiconductor surface contacts the exposed substrate material surface of the third surface and the groove is located on the surface of the insulating film; grinding said first substrate at the side of the second surface thereof to provide a fifth surface exposing therein the insulator of the groove through the bottom of the groove.
Claim 19
Dependent Claim
75 words
A method of manufacturing a bonded wafer as defined in claim 15 wherein said step of preparing a first substrate comprises the steps of: forming said at least one groove in said first surface; forming said insulator on said first surface and said at least one groove so as to fill the groove; grinding and polishing said insulator to expose said first surface and leave portions of said insulator in said at least one groove.
Claim 20
Dependent Claim
84 words
A method of manufacturing a bonded wafer as defined in claim 15 wherein said step of preparing a first substrate comprises the steps of: forming said at least one groove in said first surface; forming said insulator on said first surface and said at least one groove; forming a polysilicon layer on said insulator; grinding and polishing said polysilicon layer and said insulator to expose said first surface and leave portions of said polysilicon layer and said insulator in said at least one groove.
Claim 21
Dependent Claim
82 words
A method of manufacturing a bonded wafer as defined in claim 16 wherein said step of preparing a second substrate comprises the steps of: forming said first portion of said third surface to be a flat recess; forming said insulating film on said first portion and said second portion of said third surface; grinding and polishing said insulating film so that said third surface has said first portion covered by said insulating film and said second portion exposing said substrate material surface.
Claim 22
Dependent Claim
29 words
A method of manufacturing a bonded wafer as defined in claim 18 wherein said first and second substrate are a lightly doped substrate and a heavily doped substrate, respectively.
Claim 23
Dependent Claim
20 words
A method for manufacturing a bonded wafer as defined in claim 17 wherein the groove has a shape of V-character.
Claim 24
Dependent Claim
20 words
A method for manufacturing a bonded wafer as defined in claim 18 wherein the groove has a shape of U-character.
Claim 25
Dependent Claim
20 words
A method for manufacturing a bonded wafer as defined in claim 18 wherein the groove is filled with the insulator.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-11-12 | 2000-05-13 | 2000-11-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-11-12 | 2004-05-13 | 2004-11-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-11-12 | 2008-05-13 | 2008-11-12 | $7700.00 | Window Closed / Lapsed |