US4837186A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon semiconductor substrate with an insulating layer embedded therein and method for forming the same
Assignee: Toshiba Corp
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Filing: 1987-08-12
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Granted: 1989-06-06
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Expires: 2007-08-12
Abstract
Abstract A silicon semiconductor substrate includes an insulating layer embedded therein. The silicon semiconductor substrate comprises a first silicon plate, an insulating layer embedded in the first silicon plate so that the surfaces of the silicon plate and the insulating layer are in a mirror surface, and a second silicon plate united with the first silicon plate and the insulating layer at the mirror surface of the first silicon plate and the insulating layer. The insulating layer is used for forming an isolated region in the second silicon plate.
Inventors
- 👤 Yu Ohata
- 👤 Tsuyoshi Kuramoto
- 👤 Masaru Shimbo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:05
CPC Classifications
H; H10; H10P; H10P10/00; H10P10/12; H10P10/128; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10D; H10D84/00; H10D84/40; H10D84/401; H10D84/80; H10D84/82; H10D84/83; H10D84/8314; H10D84/837; H10P90/1914; H10W10/011; H10W10/014; H10W10/041; H10W10/17; H10W10/40; Y; Y10; Y10S; Y10S148/00; Y10S148/012
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
200 words
A method of manufacturing the silicon semiconductor substrate with an insulating layer embedded therein comprising the steps of: forming a first silicon dioxide layer on a first surface of a first monocrystalline silicon plate; forming a silicon nitride layer on said first silicon dioxide layer; removing said silicon nitride layer on a predetermined region; forming a second silicon dioxide layer on said predetermined region; removing the remaining silicon nitride layer; applying a resist layer on the surfaces of said second silicon dioxide layer and said first silicon dioxide layer remaining on said first surface of said first monocrystalline silicon plate, the free surface of said resist layer being made flat; etching said resist layer and said second silicon dioxide layer until the level of the free surface of said second silicon dioxide layer coincides with the surface level of the first silicon dioxide layer by using the reactive ion etching method; removing a upper part of said second silicon dioxide layer and said first silicon dioxide layer until said first silicon dioxide layer is completely removed; and uniting a second monocrystalline silicon plate with said first monocrystalline silicon plate and said second silicon dioxide layer at their mutual contacting surfaces.
Claim 2
Independent Claim
200 words
A method of manufacturing the silicon semiconductor substrate with an insulating layer embedded therein comprising the steps of: forming a first silicon dioxide layer on a first surface of a first monocrystalline silicon plate; forming a silicon nitride layer on said first silicon dioxide layer; removing said silicon nitride layer on a predetermined region; forming a second silicon dioxide layer on said predetermined region; removing the remaining silicon nitride layer; applying a resist layer on the surfaces of said second silicon dioxide layer and said first silicon dioxide layer remaining on said first surface of said first monocrystalline silicon plate, the free surface of said resist layer being made flat; etching said resist layer and said second silicon dioxide layer until the level of the free surface of said second silicon dioxide layer coincides with the surface level of the first silicon dioxide layer by using the reactive ion etching method; removing a upper part of said second silicon dioxide layer and said first silicon dioxide layer until said first silicon dioxide layer is completely removed; and uniting a second monocrystalline silicon plate with said first monocrystalline silicon plate and said second silicon dioxide layer at their mutual contacting surfaces.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-06-05 | 1992-12-05 | 1993-06-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-06-05 | 1996-12-05 | 1997-06-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-06-05 | 2000-12-05 | 2001-06-06 | $7700.00 | Window Closed / Lapsed |