Intergrated circuits having isolated islands with a plurality of semiconductor devices in each island

Claim 1

A CURRENT MODE LOGIC CIRCUIT STRUCTURE, A CONDUCTIVE SUBSTRATE HAVING ONE SURFACE WITH A PLURALITY OF ISLANDS EXTENDING THEREINTO FROM THE ONE SURFACE, EACH ISLAND BEING LINED AND INSULATED FROM SAID SUBSTRATE BY A LAYER OF INSULATING MATERIAL, THE IMPROVEMENT INCLUDING IN COMBINATION: A PLURALITY OF SAID ISLANDS HAVING FIRST SEMICONDUCTOR REGIONS OF MONOCRYSTALLINE FIRST CONDUCTIVITY TYPE SEMICONDUCTIVE MATERIAL, A SECOND PLURALITY OF BASE REGIONS HAVING SECOND CONDUCTIVITY TYPE MONOCRYSTALLINE SEMICONDUCTIVE MATERIAL EXTENDING FROM THE ONE SURFACE INTO A FIRST ONE OF SAID FIRST SEMICONDUCTOR REGIONS AND WITH A FIRST SET OF SECOND PLURALITY OF RECTIFYING JUNCTIONS THEREBETWEEN, RESPECTIVELY, A SECOND PLURALITY OF SECOND SEMICONDUCTOR REGIONS HAVING SAID FIRST CONDUCTIVITY TYPE SEMICONDUCTIVE MATERIAL AND EXTENDING FROM THE ONE SURFACE INTO SAID BASE REGIONS, RESPECTIVELY, AND BEING IN OHMIC ELECTRICAL CONNECTION ONE WITH THE OTHER, AND WITH A SECOND SET OF SECOND PLURALITY OF RECTIFYING JUNCTIONS BETWEEN SAID SECOND SEMICONDUCTOR REGIONS AND SAID BASE REGIONS, RESPECTIVELY, A THIRD PLURALITY OF BASE REGIONS HAVING SAID SECOND CONDUCTIVITY TYPE SEMICONDUCTOR MATERIAL EXTENDING FROM THE ONE SURFACE INTO A SECOND ONE OF SAID FIRST PLURALITY OF FIRST SEMICONDUCTOR REGIONS, AND WITH A FIRST SET OF THIRD PLURALITY OF RECTIFYING JUNCTIONS THEREBETWEEN, RESPECTIVELY, A THIRD PLURALITY OF THIRD SEMICONDUCTOR REGIONS RESPECTIVELY EXTENDING FROM THE ONE SURFACE INTO SAID THRID PLURALITY OF BASE REGIONS, AND WITH A SECOND SET OF FLUID PLURALITY OF RECTIFYING JUNCTIONS THEREBETWEEN, RESPECTIVELY, A PLURALITY OF RESISTANCE MEANS HAVING SAID SECOND CONDUCTIVITY TYPE SEMICONDUCTIVE MATERIAL EXTENDING FROM SAID ONE SURFACE INTO SAID SECOND ONE OF SAID PLURALITY OF FIRST SEMICONDUCTOR REGIONS, AND MEANS ON SAID SECOND ONE OF SAID PLURALITY OF FIRST SEMICONDUCTOR REGIONS ELECTRICALLY INTERCONNECTING SAID RESISTANCE MEANS AND SAID REGIONS TO FORM AN ELECTRICAL CIRCUIT AND CONNECTING ONE OF SAID RESISTANCE MEANS TO ONE OF SAID SEMICONDUCTOR REGIONS IN SAID FIRST ISLAND.