US3235428A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making integrated semiconductor devices
Assignee: AT&T Inc
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Filing: 1963-04-10
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Granted: 1966-02-15
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Expires: 1983-04-10
Abstract
No abstract record available.
Inventors
- 👤 Daniel A Naymik
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 02:53
CPC Classifications
H; H10; H10W; H10W10/00; B; B28; B28D; B28D5/00; B28D5/04; H10P; H10P52/00; H10P95/00; H10W10/01; H10W10/011; H10W10/10; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/085; Y10S257/00; Y10S257/926; Y10T; Y10T156/00; Y10T156/10; Y10T156/1052
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
95 words
A METHOD OF FABRICATING A UNITARY ARRAY OF INDIVIDUAL SEMICONDUCTOR ELEMENTS IN BONDED, ELECRICALLY INSULATED RELATION COMPRING PROVIDING A PLURALITY OF FIRST SLICES OF SEMICONDUCTOR MATERIAL, FORMING AN OXIDE FILM ON THE FACES OF SAID SLICES, APPLYING ON AT LEAST ONE FACE OF EACH SLICE A LAYER OF GLASS, STACKING SAID SLICES WITH AT LEAST ONE GLASS LAYER INTERVENING EACH PAIR OF ADJACENT SLICES, HEATING SAID ASSEMBLY AT A TEMPERATURE BELOW THE MELTING POINT OF THE SEMICONDUCTOR FOR A PERIOD OF TIME SUFFICIENT TO FUSE THE GLASS AND THEREBY BOND SAID SLICES TOGETHER, CUTTING SAID
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-02-14 | 1969-08-16 | 1970-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-02-14 | 1973-08-16 | 1974-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-02-14 | 1977-08-16 | 1978-02-15 | $7700.00 | Window Closed / Lapsed |