US3178804A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication of encapsuled solid circuits
Assignee: RTX Corp
•
Filing: 1962-04-10
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Granted: 1965-04-20
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Expires: 1982-04-10
Abstract
No abstract record available.
Inventors
- 👤 Jr Lee R Ullery
- 👤 Domenick J Garibotti
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 22:57
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10P; H10P10/00; H10P10/12; H10W; H10W20/00; H10W20/40; H10W70/00; H10W70/099; H10W70/60; H10W72/00; H10W72/20; H10W74/00; H10W74/40; H10W74/43; H10W72/071; H10W72/072; H10W72/07231; H10W72/07236; H10W72/251; H10W72/252
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
59 words
THE METHOD OF FABRICATING A HERMETICALLY ENCAPSULATED SEMICONDUCTOR DEVICE COMPRISING: FORMING A SEMICONDUCTOR DEVICE FROM A BODY OF INTRINSIC SEMICONDUCTOR MATERIAL BY DIFFUSING IMPURITIES INTO THE UPPER SURFACE THEREOF; POSITIONING AN IMPERVIOUS, NON-CONDUCTIVE ENCAPSULATING MEMBER OVER THE UPPER SURFACE OF THE BODY; AND FUSION BONDING THE MEMBER TO THE DEVICE AROUND THE PERIPHERY OF THE BODY OF SEMICONDUCTOR MATERIAL.
Claim 2
Independent Claim
59 words
THE METHOD OF FABRICATING A HERMETICALLY ENCAPSULATED SEMICONDUCTOR DEVICE COMPRISING: FORMING A SEMICONDUCTOR DEVICE FROM A BODY OF INTRINSIC SEMICONDUCTOR MATERIAL BY DIFFUSING IMPURITIES INTO THE UPPER SURFACE THEREOF; POSITIONING AN IMPERVIOUS, NON-CONDUCTIVE ENCAPSULATING MEMBER OVER THE UPPER SURFACE OF THE BODY; AND FUSION BONDING THE MEMBER TO THE DEVICE AROUND THE PERIPHERY OF THE BODY OF SEMICONDUCTOR MATERIAL.
Claim 3
Independent Claim
90 words
THE METHOD OF FABRICATING A HERMETICALLY ENCAPSULATED INTEGRATED CRYSTAL CIRCUIT DEVICE COMPRISING: FORMING THE DESIRED COPLANAR CIRCUIT IN A SINGLE CHIP OF INTRINSIC SEMICONDUCTOR HOST MATERIAL BY DIFFUSING IMPURITIES INTO THE UPPER SURFACE THEREOF; PLACING AN IMPERVIOUS NONCONDUCTIVE ENCAPSULATING MEMBER OVER THE UPPER SURFACE OF THE CHIP OF HOST MATERIAL; FUSION BONDING THE MEMBER TO THE CHIP OF HOST MATERIAL, AROUND THE PERIPHERY OF THE CHIP OF HOST MATERIAL, AND PRODUCING HERMETICALLY SEALED CONDUCTIVE PATHS BETWEEN THE EXPOSED SURFACE OF THE MEMBER AND THE CIRCUIT ELEMENTS OF THE CRYSTAL CIRCUIT.
Claim 4
Independent Claim
90 words
THE METHOD OF FABRICATING A HERMETICALLY ENCAPSULATED INTEGRATED CRYSTAL CIRCUIT DEVICE COMPRISING: FORMING THE DESIRED COPLANAR CIRCUIT IN A SINGLE CHIP OF INTRINSIC SEMICONDUCTOR HOST MATERIAL BY DIFFUSING IMPURITIES INTO THE UPPER SURFACE THEREOF; PLACING AN IMPERVIOUS NONCONDUCTIVE ENCAPSULATING MEMBER OVER THE UPPER SURFACE OF THE CHIP OF HOST MATERIAL; FUSION BONDING THE MEMBER TO THE CHIP OF HOST MATERIAL, AROUND THE PERIPHERY OF THE CHIP OF HOST MATERIAL, AND PRODUCING HERMETICALLY SEALED CONDUCTIVE PATHS BETWEEN THE EXPOSED SURFACE OF THE MEMBER AND THE CIRCUIT ELEMENTS OF THE CRYSTAL CIRCUIT.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-04-19 | 1968-10-19 | 1969-04-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-04-19 | 1972-10-19 | 1973-04-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-04-19 | 1976-10-19 | 1977-04-20 | $7700.00 | Window Closed / Lapsed |