Abstract A method for forming contact holes, capable of achieving an increased tolerance in design rule for formation of contact holes by: forming an insulating film over a semiconductor substrate; coating a positive photoresist film over the insulating film; primarily exposing the photoresist film to a light using a first exposure mask having windows adapted to allow portions of the insulating film corresponding to a part of contact holes to be exposed to the light, the part of contact holes having contact holes arranged diagonally to each other; secondarily exposing the photoresist film to the light using a second exposure mask having windows arranged diagonally to each other and not overlapped with those of the first exposure mask; removing the light-exposed portions of the photoresist film to form a photoresist film pattern for exposing portions of the insulating film respectively corresponding to the contact holes; and forming the contact holes using the photoresist film pattern as a mask. Since an approximation effect of contact holes is reduced by virtue of the increase tolerance in design rule for formation of contact holes, it is possible to obtain a more reduced space between adjacent contacts and thereby to form contact holes having a more increased dimension. Accordingly, the process yield can be increased.
A method for forming a plurality of contact holes in a semiconductor device, the contact holes being arranged in an array of rows and columns comprising diagonal rows of contact holes, wherein the spacing of the contact holes is such that during a photolithography step used to expose a photoresist film at the positions of the contact holes constructive interference occurs and causes a relative maximum of light intensity which exposes portions of the photoresist layer between the contact holes, comprising the steps of: forming an insulating film over a semiconductor substrate; coating the photoresist film over the insulating film; exposing the photoresist film to light using a first exposure mask having windows arranged such that portions of the photoresist film corresponding to positions of the contact holes arranged in diagonal rows which are not adjacent each other are exposed to the light during the photolithography step; exposing the photoresist film to the light using a second exposure mask having windows arranged to expose the photoresist film at the remaining positions of the contact holes using the photolithography step; removing the exposed portion of the photoresist to expose the contact hole positions; and removing the insulating layer at the contact hole positions, thereby forming the contact holes.
Claim 2
Independent Claim
207 words
A method for forming a plurality of contact holes in a semiconductor device, the contact holes being arranged in an array of rows and columns comprising diagonal rows of contact holes, wherein the spacing of the contact holes is such that during a photolithography step used to expose a photoresist film at the positions of the contact holes constructive interference occurs and causes a relative maximum of light intensity which exposes portions of the photoresist layer between the contact holes, comprising the steps of: forming an insulating film over a semiconductor substrate; coating the photoresist film over the insulating film; exposing the photoresist film to light using a first exposure mask having windows arranged such that portions of the photoresist film corresponding to positions of the contact holes arranged in diagonal rows which are not adjacent each other are exposed to the light during the photolithography step; exposing the photoresist film to the light using a second exposure mask having windows arranged to expose the photoresist film at the remaining positions of the contact holes using the photolithography step; removing the exposed portion of the photoresist to expose the contact hole positions; and removing the insulating layer at the contact hole positions, thereby forming the contact holes.