US5571337A — Method for cleaning and drying a semiconductor wa…

Claim 1

Independent Claim 185 words

A method for cleaning and drying a semiconductor wafer comprising: introducing a partially completed semiconductor wafer into a chamber; immersing said partially completed semiconductor wafer in a liquid comprising water, said partially completed semiconductor wafer including a front face, a back face, and an edge, said liquid being substantially free from particles greater than about 0.2 microns in diameter; displacing said liquid with a gaseous mixture in said chamber, said liquid being displaced along said front face of said partially completed semiconductor wafer, said gaseous mixture comprising a carrier gas and a trace of polar organic compound, said trace of polar organic compound being a non-saturated vapor in said chamber, said trace of polar organic compound causing particles to be removed from said front face; and directing a drying fluid at said partially completed semiconductor wafer, said drying fluid removing any remaining amount of said liquid from said edge; wherein said partially completed semiconductor wafer is substantially stationary during said displacing and directing, thereby decreasing a possibility of any damage to said partially completed semiconductor wafer due to movement of said partially completed semiconductor wafer.

Claim 2

Independent Claim 185 words

A method for cleaning and drying a semiconductor wafer comprising: introducing a partially completed semiconductor wafer into a chamber; immersing said partially completed semiconductor wafer in a liquid comprising water, said partially completed semiconductor wafer including a front face, a back face, and an edge, said liquid being substantially free from particles greater than about 0.2 microns in diameter; displacing said liquid with a gaseous mixture in said chamber, said liquid being displaced along said front face of said partially completed semiconductor wafer, said gaseous mixture comprising a carrier gas and a trace of polar organic compound, said trace of polar organic compound being a non-saturated vapor in said chamber, said trace of polar organic compound causing particles to be removed from said front face; and directing a drying fluid at said partially completed semiconductor wafer, said drying fluid removing any remaining amount of said liquid from said edge; wherein said partially completed semiconductor wafer is substantially stationary during said displacing and directing, thereby decreasing a possibility of any damage to said partially completed semiconductor wafer due to movement of said partially completed semiconductor wafer.

Claim 3

Dependent Claim 22 words

The method of claim 1 wherein said carrier gas is selected from a group consisting of oxygen, nitrogen, argon, and mixtures thereof.

Claim 4

Dependent Claim 22 words

The method of claim 1 wherein said drying fluid is at a temperature ranging from about 75° C. to about 175° C.

Claim 5

Dependent Claim 23 words

The method of claim 1 wherein said partially completed semiconductor wafer has a portion which is substantially free from oxidation before said immersing.

Claim 6

Dependent Claim 15 words

The method of claim 1 wherein said partially completed wafer is a recently etched wafer.

Claim 7

Dependent Claim 24 words

The method of claim 1 wherein said displacing occurs at a rate of about 2.0 mm/sec. or less as measured along said front face.

Claim 8

Dependent Claim 25 words

The method of claim 1 wherein said displacing occurs at a rate between about 0.5 mm/sec. and 2.0 mm/sec. as measured along said front face.

Claim 9

Dependent Claim 22 words

The method of claim 1 wherein said displacing occurs at a rate not exceeding 4.0 mm/sec. as measured from said front face.

Claim 10

Dependent Claim 12 words

The method of claim 1 wherein said drying fluid comprises nitrogen gas.

Claim 11

Independent Claim 115 words

A method for cleaning a semiconductor wafer comprising: immersing a partially completed semiconductor wafer in a liquid comprising water; and displacing said liquid with a gas, said gas being substantially free from any polar organic compounds and therefore more environmentally safe, said liquid being displaced along a face of said partially completed semiconductor wafer; wherein said displacing occurs at a rate not exceeding about 2.5 mm/sec. as measured from said face to remove particles from said partially completed semiconductor wafer; and wherein said partially completed semiconductor wafer is substantially stationary during said displacing to decrease a possibility of any damage to said partially completed semiconductor wafer due to movement of said partially completed semiconductor wafer.

Claim 12

Independent Claim 115 words

A method for cleaning a semiconductor wafer comprising: immersing a partially completed semiconductor wafer in a liquid comprising water; and displacing said liquid with a gas, said gas being substantially free from any polar organic compounds and therefore more environmentally safe, said liquid being displaced along a face of said partially completed semiconductor wafer; wherein said displacing occurs at a rate not exceeding about 2.5 mm/sec. as measured from said face to remove particles from said partially completed semiconductor wafer; and wherein said partially completed semiconductor wafer is substantially stationary during said displacing to decrease a possibility of any damage to said partially completed semiconductor wafer due to movement of said partially completed semiconductor wafer.

Claim 13

Dependent Claim 20 words

The method of claim 10 wherein said liquid is substantially free from particles greater than about 0.1 microns in diameter.

Claim 14

Dependent Claim 15 words

The method of claim 6 or 10 wherein said rate is a substantially constant rate.

Claim 15

Dependent Claim 15 words

The method of claim 30 wherein said liquid is filtered through an ultraviolet purification unit.

Claim 16

Dependent Claim 22 words

The method of claim 10 wherein said gas is selected from a group consisting of air, oxygen, nitrogen, argon, and mixtures thereof.

Claim 17

Dependent Claim 22 words

The method of claim 10 wherein said gaseous mixture is at a temperature ranging from about 75° C. to about 175° C.

Claim 18

Dependent Claim 18 words

The method of claim 10 wherein said partially completed wafer is substantially free from oxidation before said immersing.

Claim 19

Dependent Claim 13 words

The method of claim 16 wherein said partially completed wafer recently etched wafer.

Claim 20

Dependent Claim 18 words

The method of claim 10 wherein said displacing occurs at a rate of about 2.0 mm/sec. or less.

Claim 21

Dependent Claim 19 words

The method of claim 10 wherein said displacing occurs at a rate between about 0.5 mm/sec. and 2.0 mm/sec.

Claim 22

Dependent Claim 27 words

The method of claim 10 further comprising a step of introducing a drying fluid to remove any amount of said liquid from said partially semiconductor completed wafer.

Claim 23

Dependent Claim 14 words

The method of claim 10 wherein said gas is at about 70 ° C.

Claim 24

Independent Claim 105 words

A method of cleaning semiconductor wafers, said method comprising steps of: immersing a wafer into a cleaning liquid, said wafer comprising particulate contamination thereon, said cleaning liquid being substantially free from particulate contamination having a diameter greater than about 0.2 micron; dropping a liquid level of said cleaning liquid at a rate around said wafer to pull particulate contamination therefrom; wherein said rate is no greater than 4.0 mm/sec. as measured along a front face of said wafer; and wherein said wafer is substantially stationary during said dropping step to decrease a possibility of any damage of said wafer due to movement of said wafer.

Claim 25

Independent Claim 105 words

A method of cleaning semiconductor wafers, said method comprising steps of: immersing a wafer into a cleaning liquid, said wafer comprising particulate contamination thereon, said cleaning liquid being substantially free from particulate contamination having a diameter greater than about 0.2 micron; dropping a liquid level of said cleaning liquid at a rate around said wafer to pull particulate contamination therefrom; wherein said rate is no greater than 4.0 mm/sec. as measured along a front face of said wafer; and wherein said wafer is substantially stationary during said dropping step to decrease a possibility of any damage of said wafer due to movement of said wafer.

Claim 26

Dependent Claim 10 words

The method of claim 22 wherein cleaning liquid comprises water.

Claim 27

Dependent Claim 16 words

The method of claim 23 wherein said water is filtered through a plurality of charged filters.

Claim 28

Dependent Claim 21 words

The method of claim 24 wherein said plurality of charged filters includes a negatively charged filter and a positively charged filter.

Claim 29

Dependent Claim 15 words

The method of claim 23 wherein said cleaning liquid is replaced by a gaseous mixture.

Claim 30

Dependent Claim 17 words

The method of claim 1 or 26 wherein said gaseous mixture is at about 70 ° F.

Claim 31

Dependent Claim 38 words

The method of claim 26 wherein said gaseous mixture is substantially a carrier gas with a trace of a polar organic compound, said trace of polar organic compound being a non-saturated vapor in a chamber enclosing said wafer.

Claim 32

Dependent Claim 22 words

The method of claim 28 wherein said trace of said polar organic compound causes particulate contamination to be removed from said wafer.

Claim 33

Independent Claim 19 words

The method of claims 1 or 28 wherein said trace of polar organic compound is less than a milliliter.

Claim 34

Dependent Claim 24 words

The method of claim 22 wherein said rate is no greater than about 2.5 mm/sec. as measured from a front face of said wafer.

Claim 35

Dependent Claim 25 words

The method of claim 22 further comprising a step of introducing a drying fluid to remove any amount of said cleaning liquid from said wafer.

Claim 36

Independent Claim 145 words

A method for cleaning a semiconductor wafer comprising: introducing a partially completed wafer into a chamber, said partially completed wafer including a front face; immersing said partially completed wafer in a liquid comprising water said liquid being substantially free from particles greater than about 0.2 microns in diameter and; introducing a gaseous mixture into said chamber to replace said liquid, said liquid being displaced along said front face, said gaseous mixture comprising a carrier gas and a trace of polar organic compound, said trace of polar organic compound being a non-saturated vapor in said chamber, said trace of polar organic compound causing particles to be removed from said front face; wherein said partially completed wafer is substantially stationary during said introducing of said gaseous mixture, thereby decreasing a possibility of any damage to said partially completed wafer due to movement of said partially completed wafer.

Claim 37

Independent Claim 145 words

A method for cleaning a semiconductor wafer comprising: introducing a partially completed wafer into a chamber, said partially completed wafer including a front face; immersing said partially completed wafer in a liquid comprising water said liquid being substantially free from particles greater than about 0.2 microns in diameter and; introducing a gaseous mixture into said chamber to replace said liquid, said liquid being displaced along said front face, said gaseous mixture comprising a carrier gas and a trace of polar organic compound, said trace of polar organic compound being a non-saturated vapor in said chamber, said trace of polar organic compound causing particles to be removed from said front face; wherein said partially completed wafer is substantially stationary during said introducing of said gaseous mixture, thereby decreasing a possibility of any damage to said partially completed wafer due to movement of said partially completed wafer.

Claim 38

Dependent Claim 22 words

The method of claim 33 wherein said carrier gas is selected from a group consisting of oxygen, nitrogen, argon, and combinations thereof.

Claim 39

Dependent Claim 22 words

The method of claim 33 wherein said gaseous mixture is at a temperature ranging from about 75° F. to about 175° F.

Claim 40

Dependent Claim 45 words

The method of claim 33 wherein said partially completed wafer is supported in a carrier having an acute angle less than about 15 degrees from a vertical position to prevent said partially completed wafer from sticking to an adjacent partially completed wafer in said carrier.

Claim 41

Dependent Claim 18 words

The method of claim 33 wherein said partially completed wafer is substantially free from oxidation before said immersing.

Claim 42

Dependent Claim 15 words

The method of claim 33 wherein said partially completed wafer is a recently etched wafer.

Claim 43

Dependent Claim 24 words

The method of claim 33 wherein said introducing occurs at a rate of about 2.0 mm/sec. or less as measured along said front face.

Claim 44

Dependent Claim 15 words

The method of claim 22 or 39 wherein said rate is a substantially constant rate.

Claim 45

Dependent Claim 25 words

The method of claim 33 wherein said introducing occurs at a rate between about 0.5 mm/sec. and 2.0 mm/sec. as measured along said front face.

Claim 46

Dependent Claim 14 words

The method of claim 33 wherein said gaseous mixture is at about 70° F.

Claim 47

Independent Claim 17 words

The method of claims 33 wherein said trace of polar organic compound is less than a milliliter.

Claim 48

Dependent Claim 30 words

The method of claim 33 further comprising a step of introducing a drying fluid into said chamber to remove a possible amount of said liquid from said partially completed wafer.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1999-11-05	2000-05-06	2000-11-05	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2003-11-05	2004-05-06	2004-11-05	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2007-11-05	2008-05-06	2008-11-05	$7700.00	Window Closed / Lapsed

Method for cleaning and drying a semiconductor wafer

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