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US5286657A Expired / Lapsed US ⏱️ 0.0 years remaining

Single wafer megasonic semiconductor wafer processing system

Assignee: DEVELOPMENT SPECIALISTS Inc
•
Filing: 1991-12-18
•
Granted: 1994-02-15
•
Expires: 2011-12-18
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Abstract

Abstract A semiconductor wafer processing system utilizing a specially constructed wet processing chamber for a single wafer and a megasonic, or high frequency, energy dispensing system. The construction of the container causes megasonic energy to become intensified near the surface of the wafer, thereby providing more cleaning power, and resulting cleaning. The megasonic device may be mounted on a bottom wall dump valve. Also, the energy output may be used to rotate a wafer.

Inventors

  • 👤 Mario E. Bran

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 13:02
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0406; H10P72/0411; H10P72/0416; B; B08; B08B; B08B3/00; B08B3/04; B08B3/10; B08B3/12; H10P72/0414; Y; Y10; Y10S; Y10S134/00; Y10S134/902; Y10S438/00; Y10S438/906

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 294 words
A method of cleaning a semiconductor wafer or the like, comprising: positioning the wafer in a container having a plurality of upstanding walls with upper portions defining a thin, flat, vertically oriented chamber for receiving the wafer, said chamber having a generally rectangular cross section defined by two side walls having flat, generally vertically oriented surfaces closely spaced from each other, said side walls being joined by two edge walls which are spaced from each other a distance slightly greater than the diameter of the largest wafer to be processed in the container, said walls extending to a open upper end for receiving and permitting withdrawal of the wafer from said container; supporting said wafer so that two large, flat sides of the wafer extend vertically, positioned between but spaced from the chamber vertical side walls, said supporting step including supporting the wafer at a sufficiently low level that the upper edge of the wafer is located below the upper edges of said chamber walls; introducing cleaning liquid into the chamber; and directing megasonic energy into the chamber to agitate the liquid adjacent the flat sides of the wafer so as to loosen particles on the wafer, said energy being directed upwardly in a pattern greater in area than that defined by said upper portions of said walls, said side walls having lower portions spaced from each other in an amount considerably greater than the spacing between the side wall upper portions and including side wall portions which taper inwardly from the widely spaced lower side wall portions to said side wall upper portions whereby the portion of said energy being directed at said tapered wall portions is deflected and guided upwardly and inwardly to increase the agitation of said liquid adjacent said wafer.
Claim 2
Independent Claim 294 words
A method of cleaning a semiconductor wafer or the like, comprising: positioning the wafer in a container having a plurality of upstanding walls with upper portions defining a thin, flat, vertically oriented chamber for receiving the wafer, said chamber having a generally rectangular cross section defined by two side walls having flat, generally vertically oriented surfaces closely spaced from each other, said side walls being joined by two edge walls which are spaced from each other a distance slightly greater than the diameter of the largest wafer to be processed in the container, said walls extending to a open upper end for receiving and permitting withdrawal of the wafer from said container; supporting said wafer so that two large, flat sides of the wafer extend vertically, positioned between but spaced from the chamber vertical side walls, said supporting step including supporting the wafer at a sufficiently low level that the upper edge of the wafer is located below the upper edges of said chamber walls; introducing cleaning liquid into the chamber; and directing megasonic energy into the chamber to agitate the liquid adjacent the flat sides of the wafer so as to loosen particles on the wafer, said energy being directed upwardly in a pattern greater in area than that defined by said upper portions of said walls, said side walls having lower portions spaced from each other in an amount considerably greater than the spacing between the side wall upper portions and including side wall portions which taper inwardly from the widely spaced lower side wall portions to said side wall upper portions whereby the portion of said energy being directed at said tapered wall portions is deflected and guided upwardly and inwardly to increase the agitation of said liquid adjacent said wafer.
Claim 3
Dependent Claim 44 words
The method of claim 1 including opening a dump valve in a lower wall of the container to quickly dump the liquid from the container and simultaneously lowering the device producing the megasonic energy, which is mounted on a movable portion of said valve.
Claim 4
Dependent Claim 27 words
The method of claim 1, including rotating said wafer on said supports utilizing a driver powered by an upward flow of liquid caused by said megasonic energy.

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-02-14 1997-08-16 1998-02-15 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-02-14 2001-08-16 2002-02-15 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-02-14 2005-08-16 2006-02-15 $7700.00 Window Closed / Lapsed

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