Patent US5567674A successfully refreshed from Google Patents.
US5567674A
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US
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Process of forming oxide superconductor possessing locally different crystal orientations
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1995-06-07
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Granted: 1996-10-22
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Expires: 2015-06-07
Abstract
Abstract A thin film of oxide superconductor consisting of more than two portions (1, 11, 12) each possessing a predetermined crystal orientation and deposited on a common surface of a substrate (2). At least one selected portion (10) of thin film of oxide superconductor is deposited on a thin under-layer (4, 100) which facilitates crystal growth of selected portions and which is deposited previously on the substrate. The selected portions (10) may consist of a-axis oriented thin film portions while non-selected portions (11, 12) may consists of c-axis oriented thin film portions. The thin under-layer can be a buffer layer (4) or a very thin film (100) of oxide superconductor.
Inventors
- 👤 Hiroshi Inada
- 👤 Michitomo Iiyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:41
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0912; H10N60/0941; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/9265; Y10S428/93; Y10S428/9335; Y10S428/936; Y10S505/00; Y10S505/70; Y10S505/701; Y10S505/725; Y10S505/73; Y10S505/731; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24926
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
137 words
A process for preparing a film of oxide superconductor having a first portion and a second portion, each of the portions possessing a different crystal orientation, the process comprising: depositing a first buffer layer on a substrate, removing a portion of the first buffer layer to expose a surface of the substrate, depositing a second buffer layer on the exposed surface of the substrate, and depositing a film of oxide superconductor on a remaining portion of the first buffer layer and on the second buffer layer, such that a first portion of the film of oxide superconductor on the first buffer layer has a first crystal orientation, and a second portion of the film of oxide superconductor on the second buffer layer has a second crystal orientation, one of the crystal orientations being a c-axis crystal orientation.
Claim 2
Dependent Claim
137 words
A process for preparing a film of oxide superconductor having a first portion and a second portion, each of the portions possessing a different crystal orientation, the process comprising: depositing a first buffer layer on a substrate, removing a portion of the first buffer layer to expose a surface of the substrate, depositing a second buffer layer on the exposed surface of the substrate, and depositing a film of oxide superconductor on a remaining portion of the first buffer layer and on the second buffer layer, such that a first portion of the film of oxide superconductor on the first buffer layer has a first crystal orientation, and a second portion of the film of oxide superconductor on the second buffer layer has a second crystal orientation, one of the crystal orientations being a c-axis crystal orientation.
Claim 3
Dependent Claim
37 words
The process set forth in claim 1 wherein the first portion of the film of oxide superconductor has the c-axis crystal orientation, while the second portion of the film of oxide superconductor has an a-axis crystal orientation.
Claim 4
Dependent Claim
21 words
The process set forth in claim 1 wherein said first buffer layer is formed of LaAlO 3 or PrGaO 3 .
Claim 5
Dependent Claim
18 words
The process set forth in claim 1 wherein said buffer layers have a thickness of about 200 nm.
Claim 6
Dependent Claim
23 words
The process set forth in claim 1, wherein said substrate is formed of MgO, SrTiO 3 , CdNdAlO 4 or a semiconductor material.
Claim 7
Dependent Claim
23 words
The process set forth in claim 1, wherein said said second buffer layer portion is formed of Al 2 O 3 or MgO.
Claim 8
Dependent Claim
29 words
The process set forth in claim 1, wherein the film of oxide superconductor is formed of a Y-Ba-Cu-O oxide superconductor, a Bi-Sr-Ca-Cu-O oxide superconductor, or a Tl-Ba-Ca-Cu-O oxide superconductor.
Claim 9
Dependent Claim
152 words
A process for preparing a film of oxide superconductor portion over a first selected area of a surface of a substrate, and a second portion over a second selected area of the surface of the substrate, one of said portions having a c-axis crystal orientation, the process comprising: covering the second selected area with a sublimatable metal having a higher sublimation temperature than an oxide superconductor film forming temperature of the second portion, depositing an under-film layer of oxide superconductor having an a-axis or b-axis crystal over at least the first selected area of the surface, elevating a substrate temperature to sublimate the metal so as to remove any of the under-film layer deposited over the second selected area, and depositing a film of oxide superconductor over the first and second selected areas under conditions that are suitable to effect growth of a film of oxide superconductor having a c-axis crystal orientation.
Claim 10
Dependent Claim
152 words
A process for preparing a film of oxide superconductor portion over a first selected area of a surface of a substrate, and a second portion over a second selected area of the surface of the substrate, one of said portions having a c-axis crystal orientation, the process comprising: covering the second selected area with a sublimatable metal having a higher sublimation temperature than an oxide superconductor film forming temperature of the second portion, depositing an under-film layer of oxide superconductor having an a-axis or b-axis crystal over at least the first selected area of the surface, elevating a substrate temperature to sublimate the metal so as to remove any of the under-film layer deposited over the second selected area, and depositing a film of oxide superconductor over the first and second selected areas under conditions that are suitable to effect growth of a film of oxide superconductor having a c-axis crystal orientation.
Claim 11
Dependent Claim
13 words
The process set forth in claim 8, wherein the sublimatable metal is Mo.
Claim 12
Dependent Claim
20 words
The process set forth in claim 8, wherein the substrate is heated to about 790° C. to sublimate the metal.
Claim 13
Dependent Claim
18 words
The process set forth in claim 8, wherein the film of oxide superconductor is deposited by off-axis sputtering.
Claim 14
Dependent Claim
29 words
The process set forth in claim 8, wherein the film of oxide superconductor is formed of a Y-Ba-Cu-O oxide superconductor, a Bi-Sr-Ca-Cu-O oxide superconductor, or a Tl-Ba-Ca-Cu-O oxide superconductor.
Claim 15
Dependent Claim
20 words
The process set forth in claim 8, wherein the under-film layer has a thickness of less then about 50 nm.
Claim 16
Dependent Claim
18 words
The process set forth in claim 8, wherein the substrate is formed of MgO or PrGaO 3 .
Claim 17
Dependent Claim
27 words
The process set forth in claim 8, wherein the second selected area is covered with a layer of sublimatable metal having a thickness of about 100 nm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-10-22 | 2000-04-22 | 2000-10-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-10-22 | 2004-04-22 | 2004-10-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-10-22 | 2008-04-22 | 2008-10-22 | $7700.00 | Window Closed / Lapsed |