Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
322 words
A process for forming a deposited film by radio frequency (RF) chemical vapor deposition (CVD), process comprising generating plasma in a substantially enclosed plasma generation chamber provided with an electrode arranged at the periphery of said plasma generation chamber by applying a RF power through said electrode into said plasma generation chamber, and forming said deposited film on a substrate placed in a deposition chamber communicated with said plasma generation chamber, wherein said substrate is arranged so as to be isolated from a region where said plasma is generated, comprising: causing a magnetic field in said plasma generation chamber by means of a magnetic field generation means disposed along said electrode for applying the RF power such that a magnetic flux density with a maximum intensity in a range of from 500 to 1000 Gauss is provided on a side of an inner wall face of said plasma generation chamber and in parallel to said inner wall face; supplying a plasma generating raw material gas to a zone where said magnetic field resides; applying the RF power through said electrode to said zone to excite and decompose said plasma generating raw material gas thereby forming a plasma region localized around said electrode while producing active species; introducing a film-forming raw material gas chemically reactive with said active species into said deposition chamber to chemically react said film-forming raw material gas with said active species, wherein a ratio of Nee/Nes which is expressed by a ratio between an electron density Nes corresponding to an electron density localized around said substrate and an electron density Nee corresponding to an electron density localized around said electrode is adjusted to be 100 or more, and a relationship between a distance D between said electrode and said substrate and an inner pressure P in said deposition chamber is adjusted to satisfy the equation 0.5 Torr.cm≦P×D≦5 Torr.cm, thereby causing the formation of a deposited film on said substrate.
Claim 2
Dependent Claim
322 words
A process for forming a deposited film by radio frequency (RF) chemical vapor deposition (CVD), process comprising generating plasma in a substantially enclosed plasma generation chamber provided with an electrode arranged at the periphery of said plasma generation chamber by applying a RF power through said electrode into said plasma generation chamber, and forming said deposited film on a substrate placed in a deposition chamber communicated with said plasma generation chamber, wherein said substrate is arranged so as to be isolated from a region where said plasma is generated, comprising: causing a magnetic field in said plasma generation chamber by means of a magnetic field generation means disposed along said electrode for applying the RF power such that a magnetic flux density with a maximum intensity in a range of from 500 to 1000 Gauss is provided on a side of an inner wall face of said plasma generation chamber and in parallel to said inner wall face; supplying a plasma generating raw material gas to a zone where said magnetic field resides; applying the RF power through said electrode to said zone to excite and decompose said plasma generating raw material gas thereby forming a plasma region localized around said electrode while producing active species; introducing a film-forming raw material gas chemically reactive with said active species into said deposition chamber to chemically react said film-forming raw material gas with said active species, wherein a ratio of Nee/Nes which is expressed by a ratio between an electron density Nes corresponding to an electron density localized around said substrate and an electron density Nee corresponding to an electron density localized around said electrode is adjusted to be 100 or more, and a relationship between a distance D between said electrode and said substrate and an inner pressure P in said deposition chamber is adjusted to satisfy the equation 0.5 Torr.cm≦P×D≦5 Torr.cm, thereby causing the formation of a deposited film on said substrate.
Claim 3
Dependent Claim
41 words
The process according to claim 1, wherein the plasma is formed in the vicinity of the electrode using a magnetic field generation means capable of making a magnetic flux density to be in a range of from 600 to 800 Gauss.
Claim 4
Dependent Claim
16 words
The process according to claim 1, wherein the magnetic field generation means comprises a permanent magnet.
Claim 5
Dependent Claim
18 words
The process according to claim 1, wherein the localized plasma region is seemingly in a single doughnut-shaped state.
Claim 6
Dependent Claim
24 words
The process according to claim 1, wherein the RF power is of a frequency in (the) a range of from 1 to 300 MHz.
Claim 7
Dependent Claim
29 words
The process according to claim 1, wherein the inner pressure in the deposition chamber is adjusted to a value in (the) a range of from 0.05 to 0.2 Torr.
Claim 8
Dependent Claim
29 words
The process according to claim 1, wherein the distance between the electrode and the substrate is adjusted to be in (the) a range of from 10 to 20 cm.
Claim 9
Dependent Claim
24 words
The process according to claim 1, wherein the substrate is maintained at a temperature in (the) a range of from 50° to 600° C.
Claim 10
Dependent Claim
25 words
The process according to claim 1, wherein the magnetic field generation means is disposed at the periphery of the electrode for applying the RF power.