Patent US5559733A successfully refreshed from Google Patents.
US5559733A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Memory with ferroelectric capacitor connectable to transistor gate
Assignee: Olympus Corp
•
Filing: 1995-06-07
•
Granted: 1996-09-24
•
Expires: 2015-06-07
Abstract
Abstract A ferroelectric memory includes a constant voltage source, a capacitor having first and second electrodes, and a transistor having a gate. A switch alternately connects the gate of the transistor to the first electrode and the constant voltage source. In another embodiment, there are two ferroelectric transistors, and the first electrode of each capacitor is connected both to the gate of the transistor and to a voltage source external of the memory.
Inventors
- 👤 Larry D. McMillan
- 👤 Takashi Mihara
- 👤 Hiroyuki Yoshimori
- 👤 John W. Gregory
- 👤 Carlos A. Paz de Araujo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 20:53
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/22; G11C11/223
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
49 words
A ferroelectric memory comprising: a constant voltage source; a ferroelectric capacitor having a first electrode, a second electrode, and a ferroelectric material between said first and second electrodes; a transistor having a gate; and means for alternately connecting said gate to said first electrode and said constant voltage source.
Claim 2
Dependent Claim
49 words
A ferroelectric memory comprising: a constant voltage source; a ferroelectric capacitor having a first electrode, a second electrode, and a ferroelectric material between said first and second electrodes; a transistor having a gate; and means for alternately connecting said gate to said first electrode and said constant voltage source.
Claim 3
Dependent Claim
16 words
A ferroelectric memory as in claim 1 wherein said constant voltage source is an electronic ground.
Claim 4
Dependent Claim
56 words
A ferroelectric non-volatile, non-destructive read-out integrated circuit memory unit comprising: a plurality of ferroelectric capacitors, each ferroelectric capacitor having a first electrode, a second electrode, and a ferroelectric material between said first and second electrodes; a transistor having a gate; and said first electrode of each of said capacitors connected to said gate of said transistor.
Claim 5
Dependent Claim
56 words
A ferroelectric non-volatile, non-destructive read-out integrated circuit memory unit comprising: a plurality of ferroelectric capacitors, each ferroelectric capacitor having a first electrode, a second electrode, and a ferroelectric material between said first and second electrodes; a transistor having a gate; and said first electrode of each of said capacitors connected to said gate of said transistor.
Claim 6
Dependent Claim
33 words
A memory unit as in claim 3 and further comprising electrical connector means for electrically connecting said first electrode of each of said capacitors to a voltage source external of said memory unit.
References Cited (Backward Citations)
US2791760A
Cited
US2791761A
Cited
US3832700A
Cited
US4161038A
Cited
US4888630A
Cited
US5198994A
Cited
JPH02185789A
Cited
US5227855A
Cited
WO1991013465A1
Cited
US5038323A
Cited
JPH04199745A
Cited
JPH0590607A
Cited
US5436490A
Cited
US5303182A
Cited
JPH05145077A
Cited
US5365094A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-09-24 | 2000-03-25 | 2000-09-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-09-24 | 2004-03-25 | 2004-09-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-09-24 | 2008-03-25 | 2008-09-24 | $7700.00 | Window Closed / Lapsed |