US5436490A
Expired / Lapsed
US
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Semiconductor device having ferroelectrics layer
Assignee: Rohm Co Ltd
•
Filing: 1992-10-20
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Granted: 1995-07-25
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Expires: 2012-10-20
Abstract
Abstract A semiconductor device includes a semiconductor substrate, impurity diffusion layers formed in the surface portions of the semiconductor substrate with a desired gap therebetween, an insulator layer bridged between the impurity diffusion layers on the semiconductor substrate and an electrode stacked on the insulator layer. The insulator layer is formed of a ferroelectric of IV-VI compound.
Inventors
- 👤 Takashi Nakamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 06:42
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/701
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
54 words
A semiconductor device, comprising: a semiconductor substrate; impurity diffusion layers formed in the surface portions of said semiconductor substrate with a desired gap therebetween; an insulator layer bridged between said impurity diffusion layers on said semiconductor substrate, said insulator layer comprising a nonoxide ferroelectric IV-VI compound; and an electrode stacked on said insulator layer.
Claim 2
Dependent Claim
54 words
A semiconductor device, comprising: a semiconductor substrate; impurity diffusion layers formed in the surface portions of said semiconductor substrate with a desired gap therebetween; an insulator layer bridged between said impurity diffusion layers on said semiconductor substrate, said insulator layer comprising a nonoxide ferroelectric IV-VI compound; and an electrode stacked on said insulator layer.
Claim 3
Dependent Claim
43 words
A semiconductor device according to claim 1, wherein said insulator layer includes a main layer comprising a nonoxide ferroelectric IV-VI compound and a sub-layer comprising an insulating fluoride with a close packing structure disposed on at least one surface of said main layer.
Claim 4
Dependent Claim
28 words
A semiconductor device according to claim 1, wherein said IV-VI compound is selected from the group consisting of GeTe, SnTe, and Pb x Ge 1-x Te (0.01 ≦×≦1.00).
Claim 5
Dependent Claim
27 words
A semiconductor device according to claim 2, wherein said IV-VI compound is selected from the group consisting of GeTe, SnTe, and Pb x Ge 1-x Te (0.01≦×≦1.00).
Claim 6
Dependent Claim
17 words
A semiconductor device according to claim 2, wherein said close packing structure is a fluorite type structure.
Claim 7
Dependent Claim
17 words
A semiconductor device according to claim 4, wherein said close packing structure is a fluorite type structure.
Claim 8
Dependent Claim
29 words
A semiconductor device according to claim 5, wherein said insulating flouride having the fluorite type structure is selected from the group consisting of CaF 2 and SrF 2 .
Claim 9
Dependent Claim
29 words
A semiconductor device according to claim 6, wherein said insulating flouride having the fluorite type structure is selected from the group consisting of CaF 2 and SrF 2 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-07-24 | 1999-01-23 | 1999-07-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-07-24 | 2003-01-23 | 2003-07-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-07-24 | 2007-01-23 | 2007-07-25 | $7700.00 | Window Closed / Lapsed |