US5556479A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for drying semiconductor wafers
Assignee: DEVELOPMENT SPECIALISTS Inc
•
Filing: 1994-07-15
•
Granted: 1996-09-17
•
Expires: 2014-07-15
Abstract
Abstract A method for drying semiconductor wafers produces ultra-clean wafers without conventional drying chemicals. The method involves slowing draining a rinsing fluid from a processing tank while heating the wafer at the fluid interface as the wafer emerges from the rinsing fluid. The portion of the wafer surface at the fluid interface is heated to a temperature greater than the rinsing fluid to drive contaminant particles away from the wafer surface. An apparatus for performing this drying method also is provided.
Inventors
- 👤 Mario E. Bran
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 23:19
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0406; H10P72/0408; B; B08; B08B; B08B3/00; B08B3/04; B08B3/10; B08B3/12; F; F26; F26B; F26B3/00; F26B3/28
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
157 words
A method for drying a semiconductor wafer at the completion of cleaning or other liquid processing of the wafer which leaves the wafer immersed in rinse water, said method comprising the steps of: draining the rinse water from the wafer; simultaneously with said draining, heating the wafer at the interface between the water and a gas which replaces the water, the wafer portions at the interface being heated to a temperature greater than the temperature of the water; and continuing said draining and heating steps until said interface moves with respect to the wafer over essentially the entire surface of one side of the wafer; wherein said draining is performed at a sufficiently slow rate such that the water on the wafer at said interface flows away from the wafer without evaporation from the wafer and the wafer emerges from the water with substantially no water on the heated surface of the wafer exposed to the gas.
Claim 2
Independent Claim
157 words
A method for drying a semiconductor wafer at the completion of cleaning or other liquid processing of the wafer which leaves the wafer immersed in rinse water, said method comprising the steps of: draining the rinse water from the wafer; simultaneously with said draining, heating the wafer at the interface between the water and a gas which replaces the water, the wafer portions at the interface being heated to a temperature greater than the temperature of the water; and continuing said draining and heating steps until said interface moves with respect to the wafer over essentially the entire surface of one side of the wafer; wherein said draining is performed at a sufficiently slow rate such that the water on the wafer at said interface flows away from the wafer without evaporation from the wafer and the wafer emerges from the water with substantially no water on the heated surface of the wafer exposed to the gas.
Claim 3
Dependent Claim
14 words
The method of claim 1, wherein said heating is provided by applying radiant energy.
Claim 4
Dependent Claim
37 words
The method of claim 2, wherein said applying of radiant energy includes heating said portions of the wafer at the interface to a sufficient temperature to produce convection currents in the liquid flowing away from the wafer.
Claim 5
Dependent Claim
36 words
The method of claim 1, wherein said heating is provided by radiant energy through a wall of a container in which the wafer and the liquid are positioned, said wall being substantially transparent to radiant energy.
Claim 6
Dependent Claim
20 words
The method of claim 1, wherein said draining proceeds at a rate no faster than about 8 cm per minute.
Claim 7
Dependent Claim
18 words
The method of claim 1, wherein said draining proceeds at a rate of about 5 cm per minute.
References Cited (Backward Citations)
US4079522A
Cited
US4169807A
Cited
US4643774A
Cited
US4911761A
Cited
US4984597B1
Cited
US4984597A
Cited
US4778532A
Cited
US4736759A
Cited
US4722752A
Cited
US4816081A
Cited
US4902350A
Cited
US5071488A
Cited
US5129955A
Cited
US5017236A
Cited
US5169408A
Cited
US5203927A
Cited
US5090432A
Cited
US5143103A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-09-17 | 2000-03-18 | 2000-09-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-09-17 | 2004-03-18 | 2004-09-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-09-17 | 2008-03-18 | 2008-09-17 | $7700.00 | Window Closed / Lapsed |