Semiconductor device and manufacturing method therefor

Claim 2

A semiconductor device, comprising; a localized buried impurity layer comprising an ion-injected conductivity type determining element located at a predetermined depth from a main surface of a semiconductor substrate; and a localized gettering layer comprising an ion-injected element selected from the group consisting of oxygen, carbon, fluorine, chlorine and nitrogen with a dose in the range of 1×10 14 to 1×10 15 ions/cm 2 , located at a predetermined depth from a main surface of a semiconductor substrate; wherein the localized buried impurity layer is formed entirely within the semiconductor substrate at a shallower depth from the main surface of the semiconductor substrate than the localized gettering layer and the localized buried impurity layer overlaps to a predetermined amount the localized gettering layer.

Claim 3

A semiconductor device, manufactured by a process comprising the steps of: forming a conductive localized gettering layer in a thickness of 0.5-5.0 μm in a semiconductor substrate by ion-injecting a first element selected from the group consisting of oxygen, carbon, fluorine, chlorine and nitrogen with a dose in the range of 1×10 14 to 1×10 15 ions/cm 2 , with a first high energy to a predetermined depth determined from a main surface of said semiconductor substrate; forming a buried impurity layer entirely within and under a main surface of the semiconductor substrate in a thickness of 1-5 μm by ion-injecting a second element, selected to be a conductivity type determining element, with a second high energy, to a position not deeper than said gettering layer; and providing thereafter a heat treatment to said semiconductor substrate.

Claim 4

A semiconductor device, manufactured by a process comprising the steps of: forming a conductive localized gettering layer in a thickness of 0.5-5.0 μm in a semiconductor substrate by ion-injecting a first element selected from the group consisting of oxygen, carbon, fluorine, chlorine and nitrogen with a dose in the range of 1×10 14 to 1×10 15 ions/cm 2 , with a first high energy to a predetermined depth determined from a main surface of said semiconductor substrate; forming a buried impurity layer entirely within and under a main surface of the semiconductor substrate in a thickness of 1-5 μm by ion-injecting a second element, selected to be a conductivity type determining element, with a second high energy, to a position not deeper than said gettering layer; and providing thereafter a heat treatment to said semiconductor substrate.

Claim 5

A semiconductor device according to claim 1, wherein: said second element is selected from a group consisting of boron, phosphorus and arsenic, and is ion-injected to a density in the range 1×10 13 to 1×10 16 ions/cm 2 .

Claim 6

A semiconductor device according to claim 1, wherein: said second element is selected from a group consisting of boron, phosphorus and arsenic, and is ion-injected to a density in the range 1×10 13 to 1×10 16 ions/cm 2 .

Claim 7

A semiconductor device according to claim 3, wherein: said second element is ion-injected to a depth not greater than the depth to which said first element is ion-injected.

Claim 8

A semiconductor device according to claim 4, wherein: said second element is ion-injected to a depth not greater than the depth to which said first element is ion-injected.

Claim 9

A semiconductor device according to claim 2, wherein: said heat treatment step comprises the step of providing a nitrogenous atmosphere in which the semiconductor device is heated to be at a temperature of 1000° C. for one hour to thereby activate the buried impurity layer and generate secondary defects that serve as gettering sites in the gettering layer.

Claim 10

A semiconductor device according to claim 6, wherein: said heat treatment step comprises the step of providing a nitrogenous atmosphere heated to be at a temperature of 1000° for one hour to thereby activate the buried impurity layer and generate secondary defects that serve as gettering sites in the gettering layer.

Claim 11

A semiconductor device, comprising: a localized buried impurity layer, in a thickness of 1-5 μm, comprising an ion-injected conductivity type determining element, and having an upper surface located at a predetermined depth from a main surface of a semiconductor substrate; and a localized conductive gettering layer, having a thickness in the range 0.5-5.0 μm, comprising an ion-injected element selected from the group consisting of oxygen, carbon, fluorine, chlorine and nitrogen with a dose in the range of 1×10 14 to 1×10 13 ions/cm 2 , located in a position adjacent to and not shallower than said buried impurity layer.

Claim 12

A semiconductor device, comprising: a localized buried impurity layer, in a thickness of 1-5 μm, comprising an ion-injected conductivity type determining element, and having an upper surface located at a predetermined depth from a main surface of a semiconductor substrate; and a localized conductive gettering layer, having a thickness in the range 0.5-5.0 μm, comprising an ion-injected element selected from the group consisting of oxygen, carbon, fluorine, chlorine and nitrogen with a dose in the range of 1×10 14 to 1×10 13 ions/cm 2 , located in a position adjacent to and not shallower than said buried impurity layer.

Claim 13

A semiconductor device, comprising: a monolithic substrate having a main surface; source/drain regions of a field effect device formed spaced apart on the main surface of the substrate; a conductive gettering layer, having a thickness in the range of 0.5-5.0 μm, formed in said substrate, and having an upper surface at a first depth from said main surface of the substrate wherein said conductive gettering layer comprises an ion-injected element selected from the group consisting of oxygen, carbon, fluorine, chlorine and nitrogen with a dose in the range of 1×10 14 to 1×10 15 ions/cm 2 ; and a buried impurity layer, having a thickness in the range of 1-5 μm, formed in said substrate and having an upper surface at a second depth from said main surface of the substrate, said second depth being less than said first depth.

Claim 14

A semiconductor device, comprising: a monolithic substrate having a main surface; source/drain regions of a field effect device formed spaced apart on the main surface of the substrate; a conductive gettering layer, having a thickness in the range of 0.5-5.0 μm, formed in said substrate, and having an upper surface at a first depth from said main surface of the substrate wherein said conductive gettering layer comprises an ion-injected element selected from the group consisting of oxygen, carbon, fluorine, chlorine and nitrogen with a dose in the range of 1×10 14 to 1×10 15 ions/cm 2 ; and a buried impurity layer, having a thickness in the range of 1-5 μm, formed in said substrate and having an upper surface at a second depth from said main surface of the substrate, said second depth being less than said first depth.