Integrated semiconductor memory circuit and method for its operation

Claim 1

An integrated semiconductor memory circuit, comprising: bit lines each being formed of two bit line halves; word lines defining intersection points with said bit lines; one-transistor memory cells being disposed in matrix-like fashion at said intersection points, each of said memory cells having one selection transistor and at least one memory capacitor with electrodes; said selection transistor of each of said memory cells being connected to a respective one of said bit line halves, and one of said electrodes of said at least one memory capacitor of each of said memory cells being connected during a reading operation to a plate potential of a predetermined value; at least one dummy memory cell having at least one memory capacitor for each respective one of said bit line halves with first and second electrodes, said first electrode of said at least one memory capacitor being connected during the reading operation to the plate potential; a device for precharging said bit lines to a bit line potential having a given value; and devices for causing said second electrode of said at least one memory capacitor of said at least one dummy memory cell to be acted upon during the reading operation with a precharging potential having a value being different from and greater than said given value by 5 to 35%.

Claim 4

A method for operating an integrated semiconductor memory circuit having bit lines each being formed of two bit line halves; word lines defining intersection points with the bit lines; one-transistor memory cells being disposed in matrix-like fashion at the intersection points, each of the memory cells having one selection transistor and at least one memory capacitor with electrodes; the selection transistor of each of the memory cells being connected to a respective one of the bit line halves, and one of the electrodes of the at least one memory capacitor of each of the memory cells being connected during a reading operation to a plate potential of a predetermined value; at least one dummy memory cell having at least one memory capacitor for each respective one of the bit line halves with first and second electrodes, the first electrode of the at least one memory capacitor being connected during the reading operation to the plate potential; a device for precharging the bit lines to a bit line potential; and devices for causing the second electrode of the at least one memory capacitor of the at least one dummy memory cell to be acted upon during the reading operation with a precharging potential, which comprises: precharging the bit lines to the bit line potential, prior to a readout of data stored in the memory cells; and applying the precharging potential with a value different from and being 5 to 35% greater than the bit line potential to the second electrodes of the memory capacitors of the dummy memory cells, in the precharging of the bit lines.

Claim 5

A method for operating an integrated semiconductor memory circuit having bit lines each being formed of two bit line halves; word lines defining intersection points with the bit lines; one-transistor memory cells being disposed in matrix-like fashion at the intersection points, each of the memory cells having one selection transistor and at least one memory capacitor with electrodes; the selection transistor of each of the memory cells being connected to a respective one of the bit line halves, and one of the electrodes of the at least one memory capacitor of each of the memory cells being connected during a reading operation to a plate potential of a predetermined value; at least one dummy memory cell having at least one memory capacitor for each respective one of the bit line halves with first and second electrodes, the first electrode of the at least one memory capacitor being connected during the reading operation to the plate potential; a device for precharging the bit lines to a bit line potential; and devices for causing the second electrode of the at least one memory capacitor of the at least one dummy memory cell to be acted upon during the reading operation with a precharging potential, which comprises: precharging the bit lines to the bit line potential, prior to a readout of data stored in the memory cells; and applying the precharging potential with a value different from and being 5 to 35% greater than the bit line potential to the second electrodes of the memory capacitors of the dummy memory cells, in the precharging of the bit lines.