Patent US5552345A successfully refreshed from Google Patents.
US5552345A
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US
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Die separation method for silicon on diamond circuit structures
Assignee: Intersil Corp
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Filing: 1993-09-22
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Granted: 1996-09-03
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Expires: 2013-09-22
Abstract
Abstract Silicon on diamond die 5 are separated by patterning the diamond layer 3 and sawing the silicon layer 4. The diamond layer 3 is patterned by known techniques including laser ablation or using a silicon dioxide mask to resist deposition of diamond material. Patterning may take place after formation of microelectronic devices in dies in the silicon layer, after a device water is bonded to a diamond layer but before formation of the devices, prior to joining the device wafer to the diamond layer.
Inventors
- 👤 Gregory A. Schrantz
- 👤 Stephen J. Gaul
- 👤 Jack H. Linn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 15:12
CPC Classifications
H; H10; H10P; H10P54/00; H10W; H10W40/00; H10W40/20; H10W40/25; H10W40/254; Y; Y10; Y10S; Y10S438/00; Y10S438/94
Claims Analysis
Total Claims: 82
Claim 1
Independent Claim
61 words
A method for forming separate dies from a substrate having a layer of semiconductive material and a diamond layer, on a support layer comprising the steps of: selectively removing portions of the semiconductive layer to expose portions of the diamond layer and define scribe lines in said semiconductive layer; and removing diamond from said exposed diamond areas in said scribe lines.
Claim 2
Independent Claim
61 words
A method for forming separate dies from a substrate having a layer of semiconductive material and a diamond layer, on a support layer comprising the steps of: selectively removing portions of the semiconductive layer to expose portions of the diamond layer and define scribe lines in said semiconductive layer; and removing diamond from said exposed diamond areas in said scribe lines.
Claim 3
Dependent Claim
25 words
The method of claim 1 further comprising the step of sawing the support layer along said scribe lines to separate said dies from each other.
Claim 4
Dependent Claim
26 words
The method of claim 1 wherein the step of selectively removing portions of the semiconductive layer is performed by an etching step comprising reactive ion etching.
Claim 5
Dependent Claim
28 words
The method of claim 1 wherein the step of selectively removing portions of the semiconductor layer is performed by exposing the semiconductive layer to a KrF excimer laser.
Claim 6
Dependent Claim
14 words
The method of claim 1 wherein the diamond is removed by a laser beam.
Claim 7
Dependent Claim
28 words
The method of claim 5 wherein the laser beam is generated by laser selected from a group consisting of a frequency doubled Nd:Yag laser and an ArF laser.
Claim 8
Dependent Claim
22 words
The method of claim 5 wherein the scribe line has a kerf greater than the kerf of diamond removed by the beam.
Claim 9
Dependent Claim
18 words
The method of claim 1 wherein the semiconductive layer is masked and etched to define scribe lines therein.
Claim 10
Dependent Claim
12 words
The method of claim 8 wherein the etching is reactive ion etching.
Claim 11
Dependent Claim
21 words
The method of claim 1 wherein the exposed diamond layer is removed by reactive ion etching in the presence of oxygen.
Claim 12
Dependent Claim
16 words
The method of claim 1 wherein the exposed diamond layer is removed by ion beam etching.
Claim 13
Independent Claim
63 words
A method for separating a diamond layer on a support layer into die comprising the steps of: selectively removing diamond material from said diamond layer to form scribe lines in said diamond layer; attaching a substrate of semiconductor material to said diamond layer; sawing said semiconductor substrate along the scribe lines of the diamond layer in order to separate the substrate into die.
Claim 14
Independent Claim
63 words
A method for separating a diamond layer on a support layer into die comprising the steps of: selectively removing diamond material from said diamond layer to form scribe lines in said diamond layer; attaching a substrate of semiconductor material to said diamond layer; sawing said semiconductor substrate along the scribe lines of the diamond layer in order to separate the substrate into die.
Claim 15
Dependent Claim
34 words
The method of claim 12 further comprising the steps of: attaching a device wafer to the diamond layer having scribe lines; reducing the thickness of the device wafer; forming devices in said device wafer.
Claim 16
Dependent Claim
38 words
The method of claim 13 further comprising the steps of: attaching the device wafer to a waxed surface of a rigid substrate; removing the support layer; sawing the device wafer through the scribe pattern in said diamond layer.
Claim 17
Dependent Claim
52 words
The method of claim 13 further comprising the steps of: attaching the device wafer to a waxed surface of a rigid substrate; removing the support layer; mounting the rigid substrate on a flexible adhesive surface; removing the waxed, rigid substrate; sawing the device wafer that remains attached to the flexible adhesive surface.
Claim 18
Dependent Claim
23 words
The method of claim 12 including the step of providing a first support layer and depositing the diamond layer on the support layer.
Claim 19
Dependent Claim
29 words
The method of claim 16 wherein the step of selectively removing said diamond layer is performed after the step of depositing the diamond layer on the first support layer.
Claim 20
Dependent Claim
16 words
The method of claim 12 wherein the diamond layer is selectively removed by a laser beam.
Claim 21
Dependent Claim
29 words
The method of claim 12 wherein the laser beam is generated by a laser selected from a group consisting of a frequency doubled Nd:Yag laser and an ArF laser.
Claim 22
Dependent Claim
21 words
The method of claim 12 wherein the exposed diamond layer is removed by reactive ion etching in the presence of oxygen.
Claim 23
Dependent Claim
16 words
The method of claim 12 wherein the exposed diamond layer is removed by ion beam etching.
Claim 24
Dependent Claim
24 words
The method of claim 12 further comprising the step of attaching the diamond layer to a semiconductor layer and removing the first support layer.
Claim 25
Dependent Claim
24 words
The method of claim 18 wherein the semiconductor layer is attached to the diamond layer after the beam is applied to the diamond layer.
Claim 26
Independent Claim
101 words
A method for forming and separating dies on a support substrate comprising the steps of; depositing a first masking layer on support substrate; selective removing portions of the first masking layer to define scribe lines of exposed areas of the surface of the support substrate; forming a first layer of insulating material in said scribe lines; removing the remaining portions of the first masking layer to expose portions of the substrate not covered by the insulating material; depositing diamond material on the exposed portions of the substrate; depositing a first bonding layer; and attaching a semiconductor substrate to the bonding layer.
Claim 27
Independent Claim
101 words
A method for forming and separating dies on a support substrate comprising the steps of; depositing a first masking layer on support substrate; selective removing portions of the first masking layer to define scribe lines of exposed areas of the surface of the support substrate; forming a first layer of insulating material in said scribe lines; removing the remaining portions of the first masking layer to expose portions of the substrate not covered by the insulating material; depositing diamond material on the exposed portions of the substrate; depositing a first bonding layer; and attaching a semiconductor substrate to the bonding layer.
Claim 28
Dependent Claim
11 words
The method of claim 24 wherein the support substrate is silicon.
Claim 29
Dependent Claim
20 words
The method of claim 25 wherein the first masking layer is silicon nitride and the insulating layer is silicon dioxide.
Claim 30
Dependent Claim
11 words
The method of claim 24 wherein the bonding layer is polysilicon.
Claim 31
Dependent Claim
18 words
The method of claim 26 wherein the silicon dioxide layer is removed after the diamond layer is deposited.
Claim 32
Dependent Claim
17 words
The method of claim 24 further comprising the step of forming electrical circuits in said semiconductor substrate.
Claim 33
Dependent Claim
14 words
The method of claim 24 further comprising the step of removing the support substrate.
Claim 34
Dependent Claim
23 words
The method of claim 24 further comprising the step of sawing the semiconductor substrate along the scribe lines defined by the insulating material.
Claim 35
Independent Claim
76 words
A method for separating a substrate into dies comprising: providing a support layer having a layer of diamond material; patterning the layer of diamond material, said pattern defining a plurality of scribe lines; attaching a semiconductor substrate to said patterned layer; and forming a plurality of electrical circuits as dies on said semiconductor substrate in a pattern corresponding to the pattern of the scribe lines; sawing the semiconductor substrate along said scribe lines into separate dies.
Claim 36
Independent Claim
76 words
A method for separating a substrate into dies comprising: providing a support layer having a layer of diamond material; patterning the layer of diamond material, said pattern defining a plurality of scribe lines; attaching a semiconductor substrate to said patterned layer; and forming a plurality of electrical circuits as dies on said semiconductor substrate in a pattern corresponding to the pattern of the scribe lines; sawing the semiconductor substrate along said scribe lines into separate dies.
Claim 37
Dependent Claim
30 words
The method of claim 32 wherein the pattern of scribe lines on the support layer is formed by exposing the diamond layer to a beam that removes said diamond material.
Claim 38
Dependent Claim
12 words
The method of claim 33 wherein the beam is a laser beam.
Claim 39
Dependent Claim
27 words
The method of claim 34 wherein the laser beam is generated by a laser selected from the group consisting of a Nd:Yag laser and an ArF laser.
Claim 40
Dependent Claim
35 words
The method of claim 32 wherein the pattern of scribe lines is formed by masking the support layer with a diamond resistive material and patterning said diamond resistive material into a pattern of scribe lines.
Claim 41
Dependent Claim
23 words
The method of claim 36 wherein selected portions of the diamond layer are removed by reactive ion etching in the presence of oxygen.
Claim 42
Dependent Claim
18 words
The method of claim 32 wherein selected portions of the diamond layer are removed by ion beam etching.
Claim 43
Independent Claim
110 words
A method for forming scribe lines in a diamond layer comprising the steps of: providing a substrate for supporting a diamond layer; forming a layer of patterned diamond on said substrate; said pattern comprising a plurality of spaced apart areas, said areas spaced apart a distance sufficient to allow a saw blade capable of separating said substrate to pass between said spaced apart areas of diamond; joining a device substrate to the support substrate, forming microelectronic devices in the device substrate, said devices being spaced apart a distance sufficient to allow a saw blade capable of separating said device substrate to pass between said spaced apart areas of said device.
Claim 44
Independent Claim
110 words
A method for forming scribe lines in a diamond layer comprising the steps of: providing a substrate for supporting a diamond layer; forming a layer of patterned diamond on said substrate; said pattern comprising a plurality of spaced apart areas, said areas spaced apart a distance sufficient to allow a saw blade capable of separating said substrate to pass between said spaced apart areas of diamond; joining a device substrate to the support substrate, forming microelectronic devices in the device substrate, said devices being spaced apart a distance sufficient to allow a saw blade capable of separating said device substrate to pass between said spaced apart areas of said device.
Claim 45
Dependent Claim
32 words
The method of claim 39 wherein the step of forming a layer of patterned diamond comprises depositing a diamond resist material on said substrate and selectively removing portions of said resist material.
Claim 46
Dependent Claim
18 words
The method of claim 40 wherein the diamond resist material is silicon dioxide and the substrate is silicon.
Claim 47
Dependent Claim
73 words
The method of claim 39 further comprising the steps of providing a substrate of silicon; depositing a layer of silicon nitride; masking the layer of silicon nitride and removing selected, unmasked portions of silicon nitride to leave a mask of silicon nitride corresponding to the desired diamond pattern with the remaining areas of silicon nitride space apart the distance to allow a saw blade to pass between the remaining areas of silicon nitride.
Claim 48
Dependent Claim
33 words
The method claim of claim 42 further comprising the step of providing silicon dioxide in said spaced apart areas, removing the silicon nitride, and depositing diamond on the areas removed of silicon nitride.
Claim 49
Dependent Claim
36 words
The method of claim 43 wherein the steps of joining a device substrate to the support substrate and forming microelectronic devices in the device substrate are performed after the step of forming a patterned diamond layer.
Claim 50
Dependent Claim
59 words
The method of claim 39 wherein the step of providing a patterned diamond layer comprises depositing a layer of diamond and selectively removing portions of the diamond layer to provide a plurality of spaced apart areas of diamond, said spacing being a predetermined distance sufficient to allow a saw blade to pass between said spaced apart areas of diamond.
Claim 51
Dependent Claim
26 words
The method of claim 45 further comprising the step of providing a bonding layer on said support substrate for bonding said support substrate to another substrate.
Claim 52
Dependent Claim
15 words
The method of claim 46 wherein the bonding layer comprises a layer of silicon dioxide.
Claim 53
Dependent Claim
59 words
The method of claim 47 further comprising the steps of joining a device substrate to the support substrate, forming microelectronic devices in the device substrate, said devices being spaced apart a distance sufficient to allow a saw blade capable of separating said device substrate to pass between said spaced apart areas of said device wafer and said diamond layer.
Claim 54
Independent Claim
43 words
A method comprising the steps of: providing a sacrificial substrate having a diamond layer and a patterned bonding layer: bonding the patterned bonding layer to a handle substrate; selectively removing portions of the diamond layer to provide a scribe pattern in said layer.
Claim 55
Independent Claim
43 words
A method comprising the steps of: providing a sacrificial substrate having a diamond layer and a patterned bonding layer: bonding the patterned bonding layer to a handle substrate; selectively removing portions of the diamond layer to provide a scribe pattern in said layer.
Claim 56
Dependent Claim
22 words
The method of claim 49 wherein the pattern of the bonding layer is independent of the pattern of the scribed diamond layer.
Claim 57
Dependent Claim
18 words
The method of claim 49 wherein the bonding layer comprises a random pattern of pillars of silicon dioxide.
Claim 58
Dependent Claim
22 words
The method of claim 49 further comprising the step of providing an intermediate layer between the diamond layer and the bonding layer.
Claim 59
Dependent Claim
12 words
The method of claim 52 wherein the intermediate layer is silicon nitride.
Claim 60
Dependent Claim
16 words
The method of claim 49 further comprising bonding a device wafer to the patterned diamond layer.
Claim 61
Dependent Claim
27 words
The method of claim 54 further comprising separating the device wafer by scribing a pattern in the device wafer corresponding to the pattern of the diamond layer.
Claim 62
Dependent Claim
17 words
The method of claim 49 wherein portions of the diamond are selectively removed with a laser beam.
Claim 63
Dependent Claim
18 words
The method of claim 49 wherein portions of the diamond layer are selectively removed by ion beam etching.
Claim 64
Dependent Claim
23 words
The method of claim 49 wherein portions of the diamond layer are selectively removed by reactive ion etching in the presence of oxygen.
Claim 65
Dependent Claim
16 words
The method of claim 54 further comprising the step of forming devices in said device wafer.
Claim 66
Dependent Claim
14 words
The method of claim 59 further comprising the step of dissolving the bonding layer.
Claim 67
Dependent Claim
14 words
The method of claim 60 further comprising the step of removing the handle substrate.
Claim 68
Independent Claim
78 words
A method of fabricating semiconductor on insulator structures suitable for electronic device formation comprising the steps of: providing a support substrate; depositing a layer of diamond over the support substrate; selectively removing portions of diamond layer to form scribe lines; forming plurality of discrete diamond containing regions isolated from one another on the support substrate; depositing a bonding layer over said regions for joining a device layer to said regions; and bonding a device layer to said regions.
Claim 69
Independent Claim
78 words
A method of fabricating semiconductor on insulator structures suitable for electronic device formation comprising the steps of: providing a support substrate; depositing a layer of diamond over the support substrate; selectively removing portions of diamond layer to form scribe lines; forming plurality of discrete diamond containing regions isolated from one another on the support substrate; depositing a bonding layer over said regions for joining a device layer to said regions; and bonding a device layer to said regions.
Claim 70
Dependent Claim
11 words
The method of claim 62 wherein the support layer is silicon.
Claim 71
Dependent Claim
12 words
The method of claim 62 wherein the bonding layer comprises silicon dioxide.
Claim 72
Dependent Claim
16 words
The method of claim 64 wherein the silicon dioxide layer comprises random pillars of silicon dioxide.
Claim 73
Dependent Claim
12 words
The method of claim 62 wherein the bonding layer comprises random pillars.
Claim 74
Dependent Claim
21 words
The method of claim 62 comprising the step of forming an intermediate layer between the diamond regions and the bonding layer.
Claim 75
Dependent Claim
12 words
The method of claim 67 wherein the intermediate layer comprises silicon nitride.
Claim 76
Dependent Claim
24 words
The method of claim 62 further comprising the step of scribing the device wafer in a pattern corresponding to the discrete diamond containing regions.
Claim 77
Dependent Claim
15 words
The method of claim 1 wherein the diamond is selectively removed by a laser beam.
Claim 78
Dependent Claim
15 words
The method of claim 62 wherein the diamond is selectively removed by ion beam etching.
Claim 79
Dependent Claim
20 words
The method of claim 62 wherein the diamond is selectively removed by reactive ion etching in the presence of oxygen.
Claim 80
Dependent Claim
13 words
The method of claim 62 further comprising forming devices in said device layer.
Claim 81
Dependent Claim
14 words
The method of claim 73 further comprising the step of dissolving the bonding layer.
Claim 82
Dependent Claim
14 words
The method of claim 74 further comprising the step of removing the support substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-09-03 | 2000-03-04 | 2000-09-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-09-03 | 2004-03-04 | 2004-09-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-09-03 | 2008-03-04 | 2008-09-03 | $7700.00 | Window Closed / Lapsed |