US5091331A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ultra-thin circuit fabrication by controlled wafer debonding
Assignee: Intersil Corp
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Filing: 1990-04-16
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Granted: 1992-02-25
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Expires: 2010-04-16
Abstract
Abstract A process including forming peaks and valleys in a bonding surface of a first wafer so that the peaks are at the scribe lines which define dice. The peaks and not the valleys of the first wafer is bonded to a bonding surface of a second wafer. The device forming steps are performed on one of the wafers. Finally, the wafer in which the devices are formed is cut through at the peaks to form the dice. The peaks may be substantially the size of the kerf produced by the cutting such that the dice are separated from the other wafer by the cutting step. Alternately, the peaks may have a width greater than the kerf produced by the cutting and remain attached to the other wafer by the remaining peak portions. The dice are then separated from the other wafer at the remaining peak portions by an additional step.
Inventors
- 👤 Jose A. Delgado
- 👤 Stephen J. Gaul
- 👤 George V. Rouse
- 👤 Craig J. McLachlan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 08:17
CPC Classifications
H; H10; H10P; H10P52/00; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10W; H10W46/00; H10W46/501; Y; Y10; Y10S; Y10S148/00; Y10S148/028
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
93 words
A method of fabricating integrated circuits in wafers comprising: forming peaks and valleys in a bonding surface of a first wafer, with the peaks being at the scribe lines which define dice; oxygen bonding said peaks and not said valleys of said first wafer to a bonding surface of a second wafer; performing device formation steps on a surface of one of said first and second wafers; cutting through said one of said first and second wafers and said peaks to form dice; and separating said dice from said other of said wafers.
Claim 2
Independent Claim
93 words
A method of fabricating integrated circuits in wafers comprising: forming peaks and valleys in a bonding surface of a first wafer, with the peaks being at the scribe lines which define dice; oxygen bonding said peaks and not said valleys of said first wafer to a bonding surface of a second wafer; performing device formation steps on a surface of one of said first and second wafers; cutting through said one of said first and second wafers and said peaks to form dice; and separating said dice from said other of said wafers.
Claim 3
Dependent Claim
49 words
A method according to claim 1 wherein said peaks are formed to have a width substantially equal to the kerf produced in the cutting step whereby the dice of said one of said wafers are separated from the other of said first and second wafers by said cutting step.
Claim 4
Dependent Claim
65 words
A method according to claim 1 wherein said peaks are formed to have a width greater than the kerf produced in the cutting step, whereby the dice of said one of said wafers remain attached to the other of said first and second wafers by remaining peaks after said cutting step; and separating said dice from said other of said wafers at said remaining peaks.
Claim 5
Dependent Claim
16 words
A method according to claim 3 wherein said separating step includes applying ultra-sound to said wafers.
Claim 6
Dependent Claim
15 words
A method according to claim 3, wherein said separating step includes etching said remaining peaks.
Claim 7
Dependent Claim
19 words
A method according to claim 3, wherein said separating step includes mechanically breaking the bond at said remaining peaks.
Claim 8
Dependent Claim
29 words
A method according to claim 1 wherein said forming peaks and valleys step includes selectively etching said bonding surface of said first wafer to form valleys between unetched peaks.
Claim 9
Dependent Claim
26 words
A method according to claim 1 wherein said peaks are formed to have a height sufficient to prevent said valleys from bonding to said second wafer.
Claim 10
Dependent Claim
17 words
A method according to claim 1 wherein said device formation steps are performed on said first wafer.
Claim 11
Independent Claim
100 words
A method of fabricating integrated circuits in wafers comprising: forming peaks and valleys in a bonding surface of a first wafer, with the peaks being at the scribe lines which define dice; forming a layer in said valleys of material which will not bond with a second wafer; oxygen bonding said peaks and not said valleys of said first wafer to a bonding surface of a second wafer; performing device formation steps on a surface of one of said first and second wafers; and cutting through said one of said first and second wafers and said peaks to form dice.
Claim 12
Independent Claim
100 words
A method of fabricating integrated circuits in wafers comprising: forming peaks and valleys in a bonding surface of a first wafer, with the peaks being at the scribe lines which define dice; forming a layer in said valleys of material which will not bond with a second wafer; oxygen bonding said peaks and not said valleys of said first wafer to a bonding surface of a second wafer; performing device formation steps on a surface of one of said first and second wafers; and cutting through said one of said first and second wafers and said peaks to form dice.
Claim 13
Dependent Claim
27 words
A method according to claim 10 wherein said layer of material is formed in said valley to have a thickness less than the height of said peaks.
Claim 14
Dependent Claim
19 words
A method according to claim 10 wherein said material in said valley is conductive; and including patterning said material.
Claim 15
Dependent Claim
13 words
A method according to claim 10 wherein said material is a diamond film.
Claim 16
Independent Claim
122 words
A method of fabricating integrated circuits in wafers comprising: forming peaks and valleys in a bonding surface of a first wafer, with the peaks being at the scribe lines which define dice, selectively introducing impurities into said bonding surface of said first wafer to form areas of enhanced oxidation susceptibility and oxidizing said bonding surface of said first wafer to form oxide peaks at said areas of enhanced oxidation susceptibility; oxygen bonding said peaks and not said valleys of said first wafer to a bonding surface of a second wafer; performing device formation steps on a surface of one of said first and second wafers; and cutting through said one of said first and second wafers and said peaks to form dice.
Claim 17
Independent Claim
122 words
A method of fabricating integrated circuits in wafers comprising: forming peaks and valleys in a bonding surface of a first wafer, with the peaks being at the scribe lines which define dice, selectively introducing impurities into said bonding surface of said first wafer to form areas of enhanced oxidation susceptibility and oxidizing said bonding surface of said first wafer to form oxide peaks at said areas of enhanced oxidation susceptibility; oxygen bonding said peaks and not said valleys of said first wafer to a bonding surface of a second wafer; performing device formation steps on a surface of one of said first and second wafers; and cutting through said one of said first and second wafers and said peaks to form dice.
Claim 18
Independent Claim
123 words
A method of fabricating integrated circuits in wafers comprising: forming peaks and valleys in a bonding surface of a first wafer, with the peaks being at the scribe lines which define dice, by masking said bonding surface of said first wafer with an oxide inhibiting material having openings to expose areas of said bonding surface and oxidizing said exposed areas of said bonding surface to form peaks on said exposed areas; oxygen bonding said peaks and not said valleys of said first wafer to a bonding surface of a second wafer; performing device formation steps on a surface of one of said first and second wafers; and cutting through said one of said first and second wafers and said peaks to form dice.
Claim 19
Independent Claim
123 words
A method of fabricating integrated circuits in wafers comprising: forming peaks and valleys in a bonding surface of a first wafer, with the peaks being at the scribe lines which define dice, by masking said bonding surface of said first wafer with an oxide inhibiting material having openings to expose areas of said bonding surface and oxidizing said exposed areas of said bonding surface to form peaks on said exposed areas; oxygen bonding said peaks and not said valleys of said first wafer to a bonding surface of a second wafer; performing device formation steps on a surface of one of said first and second wafers; and cutting through said one of said first and second wafers and said peaks to form dice.
Claim 20
Independent Claim
111 words
A method of fabricating integrated circuits in wafers comprising: forming peaks and valleys in a bonding surface of a first wafer, with the peaks being at the scribe lines which define dice, by depositing a bonding material on said bonding surface of said first wafer and subsequent patterning of said deposited bonding material to form the peaks and valleys; oxygen bonding said peaks and not said valleys of said first wafer to a bonding surface of a second wafer; performing device formation steps on a surface of one of said first and second wafers; and cutting through said one of said first and second wafers and said peaks to form dice.
Claim 21
Independent Claim
111 words
A method of fabricating integrated circuits in wafers comprising: forming peaks and valleys in a bonding surface of a first wafer, with the peaks being at the scribe lines which define dice, by depositing a bonding material on said bonding surface of said first wafer and subsequent patterning of said deposited bonding material to form the peaks and valleys; oxygen bonding said peaks and not said valleys of said first wafer to a bonding surface of a second wafer; performing device formation steps on a surface of one of said first and second wafers; and cutting through said one of said first and second wafers and said peaks to form dice.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-02-24 | 1995-08-26 | 1996-02-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-02-24 | 1999-08-26 | 2000-02-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-02-24 | 2003-08-26 | 2004-02-25 | $7700.00 | Window Closed / Lapsed |