Method for supplying liquid material and process for forming thin films using the liquid material supplying method

Claim 1

A method for forming a thin film comprising aluminum on a substrate by chemical vapor deposition, comprising the steps of: pressurizing a bubbler to a pressure P b at most equal to atmospheric pressure, dimethyl aluminum hydride being provided in said bubbler; supplying a carrier gas at a volumetric flow rate into said bubbler through at least one nozzle immersed in said dimethyl aluminum hydride; maintaining the volumetric flow rate of the carrier gas and the pressure F b within said bubbler such that said carrier gas temporarily dissolves into said dimethyl aluminum hydride and is released from solution to form fine bubbles of carrier gas in said dimethyl aluminum hydride; vaporizing said dimethyl aluminum hydride into said fine bubbles of carrier gas; introducing the dimethyl aluminum hydride gas together with said carrier gas into a CVD reaction vessel containing said substrate; and depositing aluminum onto the substrate to form the thin film.

Claim 2

A method for forming a thin film comprising aluminum on a substrate by chemical vapor deposition, comprising the steps of: pressurizing a bubbler to a pressure P b at most equal to atmospheric pressure, dimethyl aluminum hydride being provided in said bubbler; supplying a carrier gas at a volumetric flow rate into said bubbler through at least one nozzle immersed in said dimethyl aluminum hydride; maintaining the volumetric flow rate of the carrier gas and the pressure F b within said bubbler such that said carrier gas temporarily dissolves into said dimethyl aluminum hydride and is released from solution to form fine bubbles of carrier gas in said dimethyl aluminum hydride; vaporizing said dimethyl aluminum hydride into said fine bubbles of carrier gas; introducing the dimethyl aluminum hydride gas together with said carrier gas into a CVD reaction vessel containing said substrate; and depositing aluminum onto the substrate to form the thin film.

Claim 3

A method for forming a thin film of at least a first material on a substrate by chemical vapor deposition using a viscous liquid material provided in a bubbler, the method comprising the steps of: supplying a carrier gas at a volumetric flow rate into the bubbler through at least one nozzle immersed in the viscous liquid material; controlling the volumetric flow rate of the carrier gas into the bubbler and a pressure P b within the bubbler, the pressure P b being below atmospheric pressure; dissolving the carrier gas into the viscous liquid material, the viscous liquid material having a viscosity of at least 100 cp and including an least the first material; vaporizing the viscous liquid material into bubbles of the carrier gas; introducing the vaporized viscous liquid material as a gas together with the carrier gas into a CVD reaction vessel containing the substrate; and depositing at least the first material onto the substrate to form the thin film, wherein the viscous liquid material is dimethyl aluminum hydride, the pressure P b and the volumetric flow rate of the carrier gas per nozzle, Q', being selected to meet the following condition: 0.0014 exp(0.024 P.sub.b)<Q'<2.3 hP.sub.b where h represents a height difference between an outlet end of each of the at least one nozzle and surface of the viscous liquid material in the bubbler.

Claim 4

A method for forming a thin film of at least a first material on a substrate by chemical vapor deposition using a viscous liquid material provided in a bubbler, the method comprising the steps of: supplying a carrier gas at a volumetric flow rate into the bubbler through at least one nozzle immersed in the viscous liquid material; controlling the volumetric flow rate of the carrier gas into the bubbler and a pressure P b within the bubbler, the pressure P b being below atmospheric pressure; dissolving the carrier gas into the viscous liquid material, the viscous liquid material having a viscosity of at least 100 cp and including an least the first material; vaporizing the viscous liquid material into bubbles of the carrier gas; introducing the vaporized viscous liquid material as a gas together with the carrier gas into a CVD reaction vessel containing the substrate; and depositing at least the first material onto the substrate to form the thin film, wherein the viscous liquid material is dimethyl aluminum hydride, the pressure P b and the volumetric flow rate of the carrier gas per nozzle, Q', being selected to meet the following condition: 0.0014 exp(0.024 P.sub.b)<Q'<2.3 hP.sub.b where h represents a height difference between an outlet end of each of the at least one nozzle and surface of the viscous liquid material in the bubbler.

Claim 9

A method for forming a thin film of at least a first material on a substrate by chemical vapor deposition using a viscous liquid material provided in a bubbler, the method comprising the steps of: supplying a carrier gas at a volumetric flow rate into the bubbler through at least one nozzle immersed in the viscous liquid material; controlling the volumetric flow rate of the carrier gas into the bubbler and a pressure P b within the bubbler, the pressure P b being below atmospheric pressure; dissolving the carrier gas into the viscous liquid material, the viscous liquid material having a viscosity of at least 100 cp and including at least the first material; vaporizing the viscous liquid material into bubbles of the carrier gas; introducing the vaporized viscous liquid material as a gas together with the carrier gas into a CVD reaction vessel containing the substrate; and depositing at least the first material onto the substrate to form the thin film, wherein the viscous liquid material is dimethyl aluminum hydride, the pressure P b and the volumetric flow rate of the carrier gas per nozzle, Q', being selected to meet the following condition: 44exp(0.009 P.sub.b)<Q'<2.3 hP.sub.b where h represents a height difference between an outlet end of each of the at least one nozzle and surface of the viscous liquid material in the bubbler.

Claim 10

A method for forming a thin film of at least a first material on a substrate by chemical vapor deposition using a viscous liquid material provided in a bubbler, the method comprising the steps of: supplying a carrier gas at a volumetric flow rate into the bubbler through at least one nozzle immersed in the viscous liquid material; controlling the volumetric flow rate of the carrier gas into the bubbler and a pressure P b within the bubbler, the pressure P b being below atmospheric pressure; dissolving the carrier gas into the viscous liquid material, the viscous liquid material having a viscosity of at least 100 cp and including at least the first material; vaporizing the viscous liquid material into bubbles of the carrier gas; introducing the vaporized viscous liquid material as a gas together with the carrier gas into a CVD reaction vessel containing the substrate; and depositing at least the first material onto the substrate to form the thin film, wherein the viscous liquid material is dimethyl aluminum hydride, the pressure P b and the volumetric flow rate of the carrier gas per nozzle, Q', being selected to meet the following condition: 44exp(0.009 P.sub.b)<Q'<2.3 hP.sub.b where h represents a height difference between an outlet end of each of the at least one nozzle and surface of the viscous liquid material in the bubbler.

Claim 15

A method for forming a thin film of at least a first material on a substrate by chemical vapor deposition using a viscous liquid material provided in a bubbler, the method comprising the steps of: supplying a carrier gas at a volumetric flow rate into the bubbler through at least one nozzle immersed in the viscous liquid material; controlling the volumetric flow rate of the carrier gas into the bubbler and a pressure P b within the bubbler, the pressure P b being below atmospheric pressure; dissolving the carrier gas into the viscous liquid material, the viscous liquid material having a viscosity of at least 100 cp and including at least the first material; vaporizing the viscous liquid material into bubbles of the carrier gas; introducing the vaporized viscous liquid material as a gas together with the carrier gas into a CVD reaction vessel containing the substrate; and depositing at least the first material onto the substrate to form the thin film, wherein the viscous liquid material is dimethyl aluminum hydride, the pressure P b and the volumetric flow rate of the carrier gas per nozzle, Q', being selected to meet the following condition: 48exp(0.12 P.sub.b)<Q"<2.3 hP.sub.b where h represents a height difference between an outlet end of each of the at least one nozzle and surface of the viscous liquid material in the bubbler.

Claim 16

A method for forming a thin film of at least a first material on a substrate by chemical vapor deposition using a viscous liquid material provided in a bubbler, the method comprising the steps of: supplying a carrier gas at a volumetric flow rate into the bubbler through at least one nozzle immersed in the viscous liquid material; controlling the volumetric flow rate of the carrier gas into the bubbler and a pressure P b within the bubbler, the pressure P b being below atmospheric pressure; dissolving the carrier gas into the viscous liquid material, the viscous liquid material having a viscosity of at least 100 cp and including at least the first material; vaporizing the viscous liquid material into bubbles of the carrier gas; introducing the vaporized viscous liquid material as a gas together with the carrier gas into a CVD reaction vessel containing the substrate; and depositing at least the first material onto the substrate to form the thin film, wherein the viscous liquid material is dimethyl aluminum hydride, the pressure P b and the volumetric flow rate of the carrier gas per nozzle, Q', being selected to meet the following condition: 48exp(0.12 P.sub.b)<Q"<2.3 hP.sub.b where h represents a height difference between an outlet end of each of the at least one nozzle and surface of the viscous liquid material in the bubbler.