US4783343A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for supplying metal organic gas and an apparatus for realizing same
Assignee: Faurecia Clarion Electronics Co Ltd
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Filing: 1987-05-19
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Granted: 1988-11-08
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Expires: 2007-05-19
Abstract
Abstract In a reduced pressure gaseous phase thin film growth device, in which the pressure within a bubbler is detected during bubbling of an organo-metallic compound and depending on the pressure thus detected, a pressure difference valve disposed between a pipe for introducing trimethylaluminium gas and a reduced pressure reactor is controlled so that the pressure within the bubbler is kept to be constant.
Inventors
- 👤 Kazuo Sato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 06:35
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/448; C23C16/4481; C23C16/4482; C23C16/52; Y; Y10; Y10S; Y10S261/00; Y10S261/65
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
146 words
In a reduced pressure gaseous phase thin film growth apparatus, in which an organo-metallic compound gas is supplied from a carrier gas passed through a bubbler containing an organo-metallic compound and thereafter passed through a pressure difference generator to a reactor, the improvement wherein said apparatus comprises: a pressure sensor for detecting the pressure within said bubbler and providing an output signal indicative of said pressure; reference pressure signal generator means for producing an output signal indicative of a chosen reference pressure; a comparator for comparing the output signal of said pressure sensor with the reference pressure signal outputted by said reference pressure signal generator means and producing an output signal indicative of a pressure difference therebetween; and control means for controlling said pressure difference generator, responding to said output signal of said comparator so that the pressure within said bubbler is kept to be constant.
Claim 2
Dependent Claim
146 words
In a reduced pressure gaseous phase thin film growth apparatus, in which an organo-metallic compound gas is supplied from a carrier gas passed through a bubbler containing an organo-metallic compound and thereafter passed through a pressure difference generator to a reactor, the improvement wherein said apparatus comprises: a pressure sensor for detecting the pressure within said bubbler and providing an output signal indicative of said pressure; reference pressure signal generator means for producing an output signal indicative of a chosen reference pressure; a comparator for comparing the output signal of said pressure sensor with the reference pressure signal outputted by said reference pressure signal generator means and producing an output signal indicative of a pressure difference therebetween; and control means for controlling said pressure difference generator, responding to said output signal of said comparator so that the pressure within said bubbler is kept to be constant.
Claim 3
Dependent Claim
25 words
A reduced pressure gaseous phase thin film growth device according to claim 1, wherein said pressure difference generator is an electrically driven pressure difference valve.
Claim 4
Dependent Claim
19 words
A reduced pressure gaseous phase thin film growth device according to claim 1, wherein said organo-metallic compound is trimethylaluminium.
Claim 5
Dependent Claim
84 words
In a reduced pressure gaseous phase thin film growth method, in which an organo-metallic compound gas is supplied from a carrier gas passed through a bubbler containing an organo-metallic compound and thereafter passed through a pressure difference generator to a reactor, the improvement wherein said method comprises; the step of detecting the pressure within said bubbler; and the step of controlling said pressure difference generator responsively to the value of the pressure thus detected, so that the pressure within said bubbler is kept constant.
Claim 6
Dependent Claim
84 words
In a reduced pressure gaseous phase thin film growth method, in which an organo-metallic compound gas is supplied from a carrier gas passed through a bubbler containing an organo-metallic compound and thereafter passed through a pressure difference generator to a reactor, the improvement wherein said method comprises; the step of detecting the pressure within said bubbler; and the step of controlling said pressure difference generator responsively to the value of the pressure thus detected, so that the pressure within said bubbler is kept constant.
Claim 7
Dependent Claim
30 words
The reduced pressure gaseous phase thin film growth device of claim 1 further including means for supplying said carrier gas at a chosen fixed mass flow rate to said bubbler.
Claim 8
Dependent Claim
21 words
The method of claim 4 wherein said carrier gas is introduced into said bubbler at a chosen fixed mass flow rate.
References Cited (Backward Citations)
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US4619844A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-11-08 | 1992-05-09 | 1992-11-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-08 | 1996-05-09 | 1996-11-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-08 | 2000-05-09 | 2000-11-08 | $7700.00 | Window Closed / Lapsed |