US5547901A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming a copper metal wiring with aluminum containing oxidation barrier
Assignee: SK Hynix Inc
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Filing: 1995-05-19
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Granted: 1996-08-20
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Expires: 2015-05-19
Abstract
Abstract A method for forming a metal wiring of a semiconductor element, which uses an aluminum film as an oxidation prevention film to prevent oxygen from being diffused into copper contained in the metal wiring. An aluminum oxidation prevention film layer is selectively formed on an exposed surface of the copper metal wiring layer using a selective chemical vapor deposition method. The width of the aluminum layer formed is below 100Å, and is converted into Al 2 O 3 at heat treating or under an atmosphere, thereby preventing the copper from oxidation. A diffusion prevention film between the substrate and the copper metal wiring layer is further included for preventing the copper from diffusing into the substrate.
Inventors
- 👤 Jun K. Kim
- 👤 Kyung I. Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 12:14
CPC Classifications
H; H10; H10P; H10P95/00; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
69 words
A method for fabricating a metal wiring of a semiconductor element comprising the steps of: forming a copper metal wiring layer on a substrate, said copper metal forming an oxidation prevention film by selectively forming an aluminum film having a thickness less than 100Å, on said exposed surface of said copper metal wiring layer thereby preventing oxidation of the copper metal wiring and completely oxidizing the oxidation prevention film.
Claim 2
Independent Claim
69 words
A method for fabricating a metal wiring of a semiconductor element comprising the steps of: forming a copper metal wiring layer on a substrate, said copper metal forming an oxidation prevention film by selectively forming an aluminum film having a thickness less than 100Å, on said exposed surface of said copper metal wiring layer thereby preventing oxidation of the copper metal wiring and completely oxidizing the oxidation prevention film.
Claim 3
Dependent Claim
20 words
The method as claimed in claim 1, wherein said oxidation prevention film is formed using a chemical vapor deposition method.
Claim 4
Dependent Claim
54 words
The method as claimed in claim 1, wherein said oxidation prevention film is formed by depositing an aluminum film on said exposed surface of said copper metal wiring layer and on said substrate using a chemical vapor deposition method, and photolithographically patterning said aluminum film to remove said deposited aluminum film on said substrate.
Claim 5
Independent Claim
101 words
A method for fabricating a metal wiring of a semiconductor element comprising the steps of: forming a copper metal wiring layer on a part of a substrate, said copper metal wiring layer having an exposed surface; forming a diffusion prevention layer to prevent diffusion between said part of said substrate and said copper metal wiring layer; and forming an oxidation prevention film having a thickness less than 100Å on said exposed surface of said copper metal wiring layer, wherein said oxidation prevention film includes aluminum, and prevents oxidation of said copper metal wiring layer and completely oxidizing the oxidation prevention film.
Claim 6
Independent Claim
101 words
A method for fabricating a metal wiring of a semiconductor element comprising the steps of: forming a copper metal wiring layer on a part of a substrate, said copper metal wiring layer having an exposed surface; forming a diffusion prevention layer to prevent diffusion between said part of said substrate and said copper metal wiring layer; and forming an oxidation prevention film having a thickness less than 100Å on said exposed surface of said copper metal wiring layer, wherein said oxidation prevention film includes aluminum, and prevents oxidation of said copper metal wiring layer and completely oxidizing the oxidation prevention film.
Claim 7
Dependent Claim
25 words
The method as claimed in claim 4, wherein said diffusion prevention film is selected from the group consisting of NbN, TiW, TiN, TaN, and W.
Claim 8
Dependent Claim
20 words
The method as claimed in claim 5, wherein a thickness of said diffusion prevention film is formed greater than 100Å.
Claim 9
Dependent Claim
68 words
The method as claimed in claim 4, wherein said diffusion prevention film is formed by using a chemical vapor deposition method to deposit said diffusion prevention film and by patterning said deposited diffusion prevention film, said diffusion prevention film having an exposed surface and said copper metal wiring layer being formed only on said exposed surface of said diffusion prevention film using a selective chemical vapor deposition method.
Claim 10
Dependent Claim
29 words
The method as claimed in claim 7, wherein a width of said copper metal wiring layer is less than or equal to a width of said diffusion prevention layer.
Claim 11
Dependent Claim
35 words
The method as claimed in claim 4, wherein said diffusion prevention layer and said copper metal wiring layer are successively formed using a chemical vapor deposition method, and are subjected to a photolithographic patterning process.
Claim 12
Dependent Claim
22 words
The method as claimed in claim 9, wherein said aluminum oxidation prevention film is formed using a selective chemical vapor deposition method.
Claim 13
Independent Claim
88 words
A method for fabricating a metal wiring of a semiconductor element comprising the steps of: forming an insulation film on a semiconductor substrate; forming trenches in said insulation film using a photolithographic patterning process; forming a copper metal wiring layer in said trenches of said insulation film; and forming an oxidation prevention film having a thickness less than 100Å on said copper metal wiring layer, wherein said oxidation prevention film includes aluminum and prevents oxidation of said copper metal wiring layer and completely oxidizing the oxidation prevention film.
Claim 14
Independent Claim
88 words
A method for fabricating a metal wiring of a semiconductor element comprising the steps of: forming an insulation film on a semiconductor substrate; forming trenches in said insulation film using a photolithographic patterning process; forming a copper metal wiring layer in said trenches of said insulation film; and forming an oxidation prevention film having a thickness less than 100Å on said copper metal wiring layer, wherein said oxidation prevention film includes aluminum and prevents oxidation of said copper metal wiring layer and completely oxidizing the oxidation prevention film.
Claim 15
Dependent Claim
77 words
The method as claimed in claim 11, wherein said copper metal wiring layer is formed using a chemical vapor deposition method to deposit a copper metal wiring layer on said insulation film and in said trenches, and using a chemical mechanical polishing method to etch the surfaces of said insulation film and said copper metal wiring layer until a top surface of said copper metal wiring layer is level with a top surface of said insulation film.
Claim 16
Dependent Claim
21 words
The method as claimed in claim 11, wherein said oxidation prevention film is formed using a selective chemical vapor deposition method.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-08-20 | 2000-02-19 | 2000-08-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-08-20 | 2004-02-19 | 2004-08-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-08-20 | 2008-02-19 | 2008-08-20 | $7700.00 | Window Closed / Lapsed |