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US5543365A Expired / Lapsed US ⏱️ 0.0 years remaining

Wafer scribe technique using laser by forming polysilicon

Assignee: Texas Instruments Inc
•
Filing: 1994-12-02
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Granted: 1996-08-06
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Expires: 2014-12-02
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Abstract

Abstract A channel is formed in a wafer to fore descrite die. A portion of the wafer is heated in the channel. A portion of the heated portion is cooled to eliminate the uniform structure. The cooled portion is scribed to separate the die.

Inventors

  • 👤 Kendall S. Wills
  • 👤 Paul A. Rodriguez
  • 👤 Melvin Brewer

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 02:33
CPC Classifications
H; H10; H10P; H10P54/00; B; B23; B23K; B23K26/00; B23K26/14; B23K26/146; B23K26/36; B23K26/362; B23K26/364; B23K26/40; B23K2101/00; B23K2101/36; B23K2101/40; B23K2103/00; B23K2103/50; Y; Y10; Y10S; Y10S148/00; Y10S148/028

Claims Analysis

Total Claims: 15
Claim 1
Independent Claim 73 words
A method for preventing cracks as a result of a scribing operation, comprising the steps of: forming a channel in a wafer to provide descrite die; heating a first portion of said wafer under the channel cooling a second portion of said first portion to form a polysilicon structure that eliminates the uniform structures of said wafer of silicon within the second portion; scribing said second portion in order to separate said die.
Claim 2
Independent Claim 73 words
A method for preventing cracks as a result of a scribing operation, comprising the steps of: forming a channel in a wafer to provide descrite die; heating a first portion of said wafer under the channel cooling a second portion of said first portion to form a polysilicon structure that eliminates the uniform structures of said wafer of silicon within the second portion; scribing said second portion in order to separate said die.
Claim 3
Dependent Claim 20 words
A method for preventing cracks as in claim 1, wherein said cooling step includes the step of cooling with water.
Claim 4
Dependent Claim 21 words
A method for preventing cracks as in claim 1, wherein said heating step includes the step of heating with a laser.
Claim 5
Dependent Claim 22 words
A method for preventing cracks as in claim 1, wherein said forming step includes the step of forming said channel by etching.
Claim 6
Independent Claim 85 words
A method for preventing cracks as a result of a scribing operation, comprising the steps of: forming a channel in a wafer to provide descrite die; heating a first portion of said wafer under the channel; heating a second portion of said wafer under the channel; cooling a third portion and fourth portion of said wafer of said first and second portion respectively to form a polysilicon structure within the first and second portion structure that eliminates the uniform structure of the wafer of silicon.
Claim 7
Independent Claim 85 words
A method for preventing cracks as a result of a scribing operation, comprising the steps of: forming a channel in a wafer to provide descrite die; heating a first portion of said wafer under the channel; heating a second portion of said wafer under the channel; cooling a third portion and fourth portion of said wafer of said first and second portion respectively to form a polysilicon structure within the first and second portion structure that eliminates the uniform structure of the wafer of silicon.
Claim 8
Dependent Claim 27 words
A method for preventing cracks as in claim 5, wherein said cooling step includes the step of cooling said third portion and said fourth portion with water.
Claim 9
Dependent Claim 21 words
A method for preventing cracks as in claim 5, wherein said heating step includes the step of heating with a laser.
Claim 10
Dependent Claim 22 words
A method for preventing cracks as in claim 5, where said forming step includes the step of forming said channel by etching.
Claim 11
Independent Claim 94 words
A method for preventing cracks as a result of a descrite operation, comprising the steps of: forming a channel in a wafer to provide descrite die; heating a first portion of said wafer under the channel on a first side of said wafer; heating a second portion of said wafer on a second side of said wafer; and cooling a third portion of said second portion to form a polysilicon structure eliminates the uniform structure of said wafer of silicon within the third portion scribing said third portion in order to separate said die.
Claim 12
Independent Claim 94 words
A method for preventing cracks as a result of a descrite operation, comprising the steps of: forming a channel in a wafer to provide descrite die; heating a first portion of said wafer under the channel on a first side of said wafer; heating a second portion of said wafer on a second side of said wafer; and cooling a third portion of said second portion to form a polysilicon structure eliminates the uniform structure of said wafer of silicon within the third portion scribing said third portion in order to separate said die.
Claim 13
Dependent Claim 20 words
A method for preventing cracks as in claim 9, wherein said cooling step includes the step of cooling with water.
Claim 14
Dependent Claim 21 words
A method for preventing cracks as in claim 9, wherein said heating step includes the step of heating with a laser.
Claim 15
Dependent Claim 22 words
A method for preventing cracks as in claim 9, wherein said forming step includes the step of forming said channel by etching.

References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1999-08-06 2000-02-05 2000-08-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2003-08-06 2004-02-05 2004-08-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2007-08-06 2008-02-05 2008-08-06 $7700.00 Window Closed / Lapsed

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