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US5540786A
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Light emitting material
Assignee: Hong Kong University of Science and Technology
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Filing: 1995-03-21
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Granted: 1996-07-30
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Expires: 2015-03-21
Abstract
Abstract A novel photoluminescent material is disclosed comprising an active layer of ZnS 1-x Te x deposited directly onto a substrate by molecular beam epitaxy. The emitted light is primarily in the blue end of the spectrum. The substrate may be GaAs or more preferably Si. Depositing the material directly onto Si allows the material to be used to manufacture integrated semiconductor light emitting devices. High efficiency may be obtained at low concentrations of Te (0.01≦x≦0.07) which allow good lattice matching of the active layer to an Si substrate.
Inventors
- 👤 Gui C. Xu
- 👤 Iam K. Sou
- 👤 Kam S. Wong
- 👤 Hong Wang
- 👤 Zhi U. Yang
- 👤 George K. L. Wong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 10:04
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823; C; C09; C09K; C09K11/00; C09K11/08; C09K11/88; C09K11/881; C09K11/883; H10D; H10D62/00; H10D62/80; H10D62/86; H10D62/862; H10H20/01; H10H20/011; H10H20/012; H10H20/0125
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
37 words
A light-emitting material comprising an active luminescent layer of ZnS 1-X Te X (0<x<0.07) deposited directly on a substrate selected from the group consisting of GaAs and Si, said active layer being deposited by molecular beam epitaxy.
Claim 2
Dependent Claim
37 words
A light-emitting material comprising an active luminescent layer of ZnS 1-X Te X (0<x<0.07) deposited directly on a substrate selected from the group consisting of GaAs and Si, said active layer being deposited by molecular beam epitaxy.
Claim 3
Dependent Claim
14 words
A material as claimed in claim 1 wherein said substrate is Si and 0.01≦x.
Claim 4
Dependent Claim
9 words
A material as claimed in claim 2 wherein x=0.03.
Claim 5
Dependent Claim
14 words
A material as claimed in claim 1 wherein the substrate is GaAs and 0.01≦x.
References Cited (Backward Citations)
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US5278856A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-07-30 | 2000-01-29 | 2000-07-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-07-30 | 2004-01-29 | 2004-07-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-07-30 | 2008-01-29 | 2008-07-30 | $7700.00 | Window Closed / Lapsed |