US5198690A
Expired / Lapsed
US
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Electroluminescent device of II-IV compound semiconductor
Assignee: Sharp Corp
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Filing: 1991-11-25
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Granted: 1993-03-30
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Expires: 2011-11-25
Abstract
Abstract An electroluminescent device of compound semiconductor which is made of II-IV compound semiconductor to be in pn junction type, wherein n layer of the pn junction part comprises a II-VI compound semiconductor layer containing comprises a II-VI compound semiconductor layer containing zinc as an essential composite element and p layer of the pn junction part comprises a II-VI compound semiconductor layer having an epitaxial layer containing M, Be and Te (wherein M is Cd or Zn) as an essential composite element.
Inventors
- 👤 Masahiko Kitagawa
- 👤 Yoshitaka Tomomura
- 👤 Kenji Nakanishi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 08:30
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823; H10H20/01; H10H20/011; H10H20/012; H10H20/0125; H10H20/013; H10H20/0133; H10H20/01335; H10H20/8232; H10H20/824; H10H20/825
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
77 words
An electroluminescent device of compound semiconductor which is made of II-VI compound semiconductor to be in pn junction type, wherein n layer of the pn junction part comprises a II-VI compound semiconductor layer containing zinc as an essential composite element and p layer of the pn junction part comprises a II-VI compound semiconductor layer having an epitaxial layer containing M, Be and Te (wherein M is a group comprising Cd and Zn) as an essential composite element.
Claim 2
Dependent Claim
77 words
An electroluminescent device of compound semiconductor which is made of II-VI compound semiconductor to be in pn junction type, wherein n layer of the pn junction part comprises a II-VI compound semiconductor layer containing zinc as an essential composite element and p layer of the pn junction part comprises a II-VI compound semiconductor layer having an epitaxial layer containing M, Be and Te (wherein M is a group comprising Cd and Zn) as an essential composite element.
Claim 3
Dependent Claim
26 words
An electroluminescent device of compound semiconductor as set forth in claim 1, wherein the p layer has band gap larger than that of the n layer.
Claim 4
Dependent Claim
30 words
An electroluminescent device of compound semiconductor as set forth in claim 1, wherein the compound semiconductor of the n layer is represented by the following formula (II): ZnS.sub.1-z Se.sub.Z (0≦z≦1)
Claim 5
Dependent Claim
35 words
An electroluminescent device of compound semiconductor as set forth in claim 3, wherein the compound semiconductor of the n layer is a single crystal substrate made of the compound semiconductor represented by the formula (II).
Claim 6
Dependent Claim
36 words
An electroluminescent device of compound semiconductor as set forth in claim 3, wherein the n layer has at an interface with the p layer a super lattice layer comprising ZnS and ZnSe each heaped up alternately.
Claim 7
Dependent Claim
34 words
An electroluminescent device of compound semiconductor as set forth in claim 3, wherein the n layer has at an interface with the p layer a composite-inclined epitaxial layer comprising ZnS 1-x Se x (0<x<1).
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-03-29 | 1996-09-28 | 1997-03-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-03-29 | 2000-09-28 | 2001-03-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-03-29 | 2004-09-28 | 2005-03-30 | $7700.00 | Window Closed / Lapsed |