Patent US5532193A successfully refreshed from Google Patents.
US5532193A
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Method for forming insulating film
Assignee: Alcan Tech Co Inc
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Filing: 1994-10-31
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Granted: 1996-07-02
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Expires: 2014-10-31
Abstract
Abstract The invention relates to a method for forming a BSG film by means of chemical vapor deposition, has an object which is to provide a film forming method making it possible to obtain a BSG film of high denseness and of low hygroscopicity even immediately after the film has been formed at a low temperature, and comprises a process of forming a borosilicate glass film (BSG film) on a substrate using a mixed gas of an organometallic compound having Si--O--B bond and ozone (O 3 ).
Inventors
- 👤 Kazuo Maeda
- 👤 Noboru Tokumasu
- 👤 Yoshiaki Yuyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:29
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; C; C03; C03C; C03C3/00; C03C3/04; C03C3/076; C03C3/089; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
29 words
A method for forming a film, comprising forming a borosilicate glass film on a substrate using a mixed gas of an organometallic compound having a Si--O--B bond and ozone.
Claim 2
Independent Claim
29 words
A method for forming a film, comprising forming a borosilicate glass film on a substrate using a mixed gas of an organometallic compound having a Si--O--B bond and ozone.
Claim 3
Dependent Claim
53 words
The method for forming a film as defined in claim 1, wherein the organometallic compound having Si--O--B bond is represented by a general chemical formula: [R.sup.1.sub.3 --Si--O].sub.n --B--(OR.sup.2).sub.3-n n=1, 2, 3 where each of R 1 and R 2 is selected from the group consisting of an alkyl group and an aryl group.
Claim 4
Dependent Claim
28 words
The method for forming a film as defined in claim 1, wherein the substrate is held at a temperature of 400° C. or lower while forming the film.
Claim 5
Dependent Claim
33 words
The method for forming a film as defined in claim 1, wherein the substrate is provided by forming an insulating film on a semiconductor layer and an interconnection layer on the insulating film.
Claim 6
Dependent Claim
20 words
The method for forming a film as defined in claim 4, wherein the insulating film is a silicon oxide film.
Claim 7
Dependent Claim
26 words
The method for forming a film as defined in claim 4, wherein the interconnection layer is one of an Al film and an Al alloy film.
Claim 8
Independent Claim
31 words
A method for forming a film, comprising forming a borosilicate glass film on a substrate using a mixed gas of an organometallic compound having a Si--O--B bond and tetra-ethylorthosilicate and ozone.
Claim 9
Independent Claim
31 words
A method for forming a film, comprising forming a borosilicate glass film on a substrate using a mixed gas of an organometallic compound having a Si--O--B bond and tetra-ethylorthosilicate and ozone.
Claim 10
Dependent Claim
53 words
The method for forming a film as defined in claim 7, wherein the organometallic compound having Si--O--B bond is represented by a general chemical formula: [R.sup.1.sub.3 --Si--O].sub.n --B--(OR.sup.2).sub.3-n n=1, 2, 3 where each of R 1 and R 2 is selected from the group consisting of an alkyl group and an aryl group.
Claim 11
Dependent Claim
28 words
The method for forming a film as defined in claim 7, wherein the substrate is held at a temperature of 400° C. or lower while forming the film.
Claim 12
Dependent Claim
33 words
The method for forming a film as defined in claim 7, wherein the substrate is provided by forming an insulating film on a semiconductor layer and an interconnection layer on the insulating film.
Claim 13
Dependent Claim
20 words
The method for forming a film as defined in claim 10, wherein the insulating film is a silicon oxide film.
Claim 14
Dependent Claim
26 words
The method for forming a film as defined in claim 10, wherein the interconnection layer is one of an Al film and an Al alloy film.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-07-02 | 2000-01-01 | 2000-07-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-07-02 | 2004-01-01 | 2004-07-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-07-02 | 2008-01-01 | 2008-07-02 | $7700.00 | Window Closed / Lapsed |