US5532193A
Expired / Lapsed
US
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Method for forming insulating film
Assignee: Alcan Tech Co Inc
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Filing: 1994-10-31
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Granted: 1996-07-02
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Expires: 2014-10-31
Abstract
Abstract The invention relates to a method for forming a BSG film by means of chemical vapor deposition, has an object which is to provide a film forming method making it possible to obtain a BSG film of high denseness and of low hygroscopicity even immediately after the film has been formed at a low temperature, and comprises a process of forming a borosilicate glass film (BSG film) on a substrate using a mixed gas of an organometallic compound having Si--O--B bond and ozone (O 3 ).
Inventors
- 👤 Kazuo Maeda
- 👤 Noboru Tokumasu
- 👤 Yoshiaki Yuyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:21
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; C; C03; C03C; C03C3/00; C03C3/04; C03C3/076; C03C3/089; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
29 words
A method for forming a film, comprising forming a borosilicate glass film on a substrate using a mixed gas of an organometallic compound having a Si--O--B bond and ozone.
Claim 2
Independent Claim
29 words
A method for forming a film, comprising forming a borosilicate glass film on a substrate using a mixed gas of an organometallic compound having a Si--O--B bond and ozone.
Claim 3
Dependent Claim
53 words
The method for forming a film as defined in claim 1, wherein the organometallic compound having Si--O--B bond is represented by a general chemical formula: [R.sup.1.sub.3 --Si--O].sub.n --B--(OR.sup.2).sub.3-n n=1, 2, 3 where each of R 1 and R 2 is selected from the group consisting of an alkyl group and an aryl group.
Claim 4
Dependent Claim
28 words
The method for forming a film as defined in claim 1, wherein the substrate is held at a temperature of 400° C. or lower while forming the film.
Claim 5
Dependent Claim
33 words
The method for forming a film as defined in claim 1, wherein the substrate is provided by forming an insulating film on a semiconductor layer and an interconnection layer on the insulating film.
Claim 6
Dependent Claim
20 words
The method for forming a film as defined in claim 4, wherein the insulating film is a silicon oxide film.
Claim 7
Dependent Claim
26 words
The method for forming a film as defined in claim 4, wherein the interconnection layer is one of an Al film and an Al alloy film.
Claim 8
Independent Claim
31 words
A method for forming a film, comprising forming a borosilicate glass film on a substrate using a mixed gas of an organometallic compound having a Si--O--B bond and tetra-ethylorthosilicate and ozone.
Claim 9
Independent Claim
31 words
A method for forming a film, comprising forming a borosilicate glass film on a substrate using a mixed gas of an organometallic compound having a Si--O--B bond and tetra-ethylorthosilicate and ozone.
Claim 10
Dependent Claim
53 words
The method for forming a film as defined in claim 7, wherein the organometallic compound having Si--O--B bond is represented by a general chemical formula: [R.sup.1.sub.3 --Si--O].sub.n --B--(OR.sup.2).sub.3-n n=1, 2, 3 where each of R 1 and R 2 is selected from the group consisting of an alkyl group and an aryl group.
Claim 11
Dependent Claim
28 words
The method for forming a film as defined in claim 7, wherein the substrate is held at a temperature of 400° C. or lower while forming the film.
Claim 12
Dependent Claim
33 words
The method for forming a film as defined in claim 7, wherein the substrate is provided by forming an insulating film on a semiconductor layer and an interconnection layer on the insulating film.
Claim 13
Dependent Claim
20 words
The method for forming a film as defined in claim 10, wherein the insulating film is a silicon oxide film.
Claim 14
Dependent Claim
26 words
The method for forming a film as defined in claim 10, wherein the interconnection layer is one of an Al film and an Al alloy film.
References Cited (Backward Citations)
US3837935A
Cited
US4892753A
Cited
US5104482A
Cited
US5281295A
Cited
US5324539A
Cited
US5376591A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-07-02 | 2000-01-01 | 2000-07-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-07-02 | 2004-01-01 | 2004-07-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-07-02 | 2008-01-01 | 2008-07-02 | $7700.00 | Window Closed / Lapsed |