US5532191A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of chemical mechanical polishing planarization of an insulating film using an etching stop
Assignee: Kawasaki Microelectronics Inc
•
Filing: 1994-03-23
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Granted: 1996-07-02
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Expires: 2014-03-23
Abstract
Abstract A method of planarizing an insuating film includes the steps of preparing a semiconductor substrate; treating an uneven surface of the substrate with an organic solvent; forming an insulating film on the thus-treated surface of the substrate by a chemical vapor deposition using an organic silicon compound as a raw material or depositing SOG, forming an etching stop film having a chemical mechanical polishing etching speed slower than that of the insulating film by depositing silicon oxide or silicon oxynitride by performing a chemical vapor deposition using an inorganic silicon compound as a raw material; and etching back at least a part of the insulating film formed on the uneven surface of the substrate by a chemical mechanical polishing process using the etching stop film.
Inventors
- 👤 Tadashi Nakano
- 👤 Nobuyoshi Sato
- 👤 Tomohiro Ohta
- 👤 Hiroshi Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 18:08
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06; H10P95/062; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
153 words
A method of planarizing an insulating film comprising the steps of: (a) preparing a semiconductor substrate; (b) forming an insulating film on an uneven surface of the substrate by one of a chemical vapor deposition using an organic silicon compound as a raw material, coating a solution of an insulating substance on the uneven surface, and coating a solution of a precursor of an insulating substance on the uneven surface; (c) forming a film having a chemical mechanical polishing etching speed slower than that of the insulating film by depositing one of silicon oxide and silicon oxynitride by performing a chemical vapor deposition using an inorganic silicon compound as a raw material; and (d) etching back at least a part of the insulating film formed on the uneven surface of the substrate by a chemical mechanical polishing process using the film having a slower chemical mechanical polishing etching speed as an etching stop.
Claim 2
Independent Claim
153 words
A method of planarizing an insulating film comprising the steps of: (a) preparing a semiconductor substrate; (b) forming an insulating film on an uneven surface of the substrate by one of a chemical vapor deposition using an organic silicon compound as a raw material, coating a solution of an insulating substance on the uneven surface, and coating a solution of a precursor of an insulating substance on the uneven surface; (c) forming a film having a chemical mechanical polishing etching speed slower than that of the insulating film by depositing one of silicon oxide and silicon oxynitride by performing a chemical vapor deposition using an inorganic silicon compound as a raw material; and (d) etching back at least a part of the insulating film formed on the uneven surface of the substrate by a chemical mechanical polishing process using the film having a slower chemical mechanical polishing etching speed as an etching stop.
Claim 3
Dependent Claim
24 words
A method as claimed in claim 1, wherein the insulating film is formed by a chemical vapor deposition using tetraethylorthosilicate as a raw material.
Claim 4
Dependent Claim
26 words
A method as claimed in claim 1, wherein the insulating film is formed by a chemical vapor deposition using tetraethylorthosilicate and ozone as a raw material.
Claim 5
Dependent Claim
31 words
A method as claimed in claim 1, wherein the film having a slower chemical mechanical polishing etching speed is formed between said uneven surface of said substrate and said insulating film.
Claim 6
Dependent Claim
24 words
A method as claimed in claim 1, wherein the film having a slower chemical mechanical polishing etching speed is formed over said insulating film.
Claim 7
Dependent Claim
37 words
A method as claimed in claim 1, wherein the step (a) comprises forming a laminated film by depositing the film having a slower chemical mechanical polishing etching speed on a conductive film and patterning the laminated film.
Claim 8
Dependent Claim
20 words
A method as claimed in claim 6, wherein the conductive film comprises at least one of Al, Cu and Au.
Claim 9
Dependent Claim
14 words
A method as claimed in claim 6, wherein the conductive film comprises polycrystalline silicon.
Claim 10
Dependent Claim
17 words
A method as claimed in claim 1, wherein the insulating film is a nondoped silicate glass film.
Claim 11
Dependent Claim
42 words
A method as claimed in claim 1, wherein the insulating film is formed by one of coating a solution of an insulating substance on the uneven surface, and coating a solution of a precursor of an insulating substance on the uneven surface.
Claim 12
Dependent Claim
22 words
A method as claimed in claim 1, wherein the substrate comprises a wiring comprising at least one of Al, Cu and Au.
Claim 13
Dependent Claim
26 words
A method as claimed in claim 1, wherein the film having the slower chemical mechanical polishing speed is formed by performing a plasma chemical vapor deposition.
Claim 14
Dependent Claim
51 words
A method as claimed in claim 1, wherein: the step (b) further comprises treating the uneven surface of the substrate with an organic solvent; and the insulating film is formed on the thus-treated surface of the substrate by a chemical vapor deposition using an organic silicon compound as a raw material.
Claim 15
Dependent Claim
26 words
A method as claimed in claim 13, wherein the insulating film is formed by a chemical vapor deposition using tetraethylorthosilicate and ozone as a raw material.
Claim 16
Dependent Claim
13 words
A method as claimed in claim 14, wherein the organic solvent includes ethanol.
References Cited (Backward Citations)
US4506434A
Cited
US4505025A
Cited
JPS60121765A
Cited
US4944836A
Cited
US4671851A
Cited
US4789648A
Cited
US4775550A
Cited
US4839311A
Cited
US5091326A
Cited
US5001079A
Cited
US4910155A
Cited
US5294560A
Cited
US5017513A
Cited
US5064683A
Cited
US5336640A
Cited
US5169491A
Cited
JPH0553255A
Cited
US5376222A
Cited
US5246884A
Cited
US5399235A
Cited
US5187121A
Cited
US5397741A
Cited
US5356513A
Cited
US5395801A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-07-02 | 2000-01-01 | 2000-07-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-07-02 | 2004-01-01 | 2004-07-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-07-02 | 2008-01-01 | 2008-07-02 | $7700.00 | Window Closed / Lapsed |