US5017513A
Expired / Lapsed
US
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Method for manufacturing a semiconductor device
Assignee: Toshiba Corp
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Filing: 1990-01-18
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Granted: 1991-05-21
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Expires: 2010-01-18
Abstract
Abstract A method for manufacturing a semiconductor device comprises the steps of preparing a body having an insulating layer formed on a silicon substrate, an Al-Si-Cu alloy film formed on the insulating layer and an organic layer mask pattern formed on the alloy film, selectively etching a portion of the alloy film by a reactive ion etching with the mask pattern as a mask, and foreign film being left as a foreign material on a side wall of the alloy film at the step of the selective etching, the foreign material containing constituents of the treating layer and/or the underlying layer, heat-treating the body in an atmosphere containing at least oxygen and ashing the mask pattern while making the foreign film porous, the exposing, subsequent to the heat-treating step, the body to an etching step by an etching solution containing phosphoric acid and hydrofluoric acid.
Inventors
- 👤 Hiroshi Takeuchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 19:35
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/71; H10P50/20; H10P50/28; H10P50/286; H10P50/287; H10P50/60; H10P50/66; H10P50/663; H10P50/667; H10P50/69; H10P50/691; H10P50/692; Y; Y10; Y10S; Y10S438/00; Y10S438/963
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
78 words
A method for manufacturing a semiconductor device comprising the steps of: forming a treating layer on a semiconductor substrate; forming an organic film mask pattern on the treating layer; treating the treating layer by a reactive ion etching; removing the organic film mask pattern by an oxygen ashing method using at least oxygen molecules; and exposing, subsequent to the removing step, at least the treating layer and/or its underlying layer to an etching step using an etching medium.
Claim 2
Independent Claim
78 words
A method for manufacturing a semiconductor device comprising the steps of: forming a treating layer on a semiconductor substrate; forming an organic film mask pattern on the treating layer; treating the treating layer by a reactive ion etching; removing the organic film mask pattern by an oxygen ashing method using at least oxygen molecules; and exposing, subsequent to the removing step, at least the treating layer and/or its underlying layer to an etching step using an etching medium.
Claim 3
Dependent Claim
17 words
The method according to claim 1, wherein said etching medium is in the form of a solution.
Claim 4
Dependent Claim
27 words
The method according to claim 2, wherein said treating layer is formed of aluminum or an aluminum alloy and said solution contains phosphoric acid and hydrofluoric acid.
Claim 5
Dependent Claim
17 words
The method according to claim 2, wherein said etching medium is in the form of a gas.
Claim 6
Dependent Claim
13 words
The method according to claim 4, wherein said gas is excited by light.
Claim 7
Dependent Claim
19 words
The method according to claim 4, wherein said gas is excited by a high frequency wave or a microwave.
Claim 8
Independent Claim
152 words
A method for manufacturing a semiconductor device comprising the steps of: preparing a body having an underlying layer formed on a substrate, a treating layer formed on the underlying layer and an organic layer mask pattern formed on the treating layer; selectively etching a portion of the treating layer by a reactive ion etching with the mask pattern as a mask, an foreign film being left as a foreign material on a side wall of the treating material at the step of the selective etching, the foreign material containing constituents of the treating layer and/or the underlying layer; heat-treating the body in an atmosphere containing at least oxygen and ashing the mask pattern while making the foreign film porous; and exposing, subsequent to the heat-treating step, the body to an etching step by an etching medium, which etches at least the treating layer and/or its underlying layer, and removing the porous film.
Claim 9
Independent Claim
152 words
A method for manufacturing a semiconductor device comprising the steps of: preparing a body having an underlying layer formed on a substrate, a treating layer formed on the underlying layer and an organic layer mask pattern formed on the treating layer; selectively etching a portion of the treating layer by a reactive ion etching with the mask pattern as a mask, an foreign film being left as a foreign material on a side wall of the treating material at the step of the selective etching, the foreign material containing constituents of the treating layer and/or the underlying layer; heat-treating the body in an atmosphere containing at least oxygen and ashing the mask pattern while making the foreign film porous; and exposing, subsequent to the heat-treating step, the body to an etching step by an etching medium, which etches at least the treating layer and/or its underlying layer, and removing the porous film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-05-20 | 1994-11-19 | 1995-05-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-05-20 | 1998-11-19 | 1999-05-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-05-20 | 2002-11-19 | 2003-05-21 | $7700.00 | Window Closed / Lapsed |