US5529958A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device having silicide
Assignee: NEC Electronics Corp
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Filing: 1994-09-08
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Granted: 1996-06-25
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Expires: 2014-09-08
Abstract
Abstract The present invention relates to a method of manufacturing a semiconductor device, including the steps of forming, on a silicon substrate, a metal film to be converted into a silicide, continuously forming a thin film on the metal film, and performing annealing of a structure body constituted by the silicon substrate, the metal film, and the thin film at a temperature at which the metal film is reacted with the silicon substrate.
Inventors
- 👤 Akihiro Yaoita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 20:14
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
118 words
A method of manufacturing a semiconductor device, comprising the steps of: forming, on a silicon substrate, a first film to be converted into a silicide; continuously forming a second film on said first film; and annealing a structure body constituted by said silicon substrate, said first film and said second film at a temperature at which said first film is reacted with said silicon substrate, thereby forming a silicide; and removing said second film from said silicide; wherein said first and second films are formed to have a thickness of about 5 to 40 nm; and wherein said second film is formed of a material selected from the group consisting of a platinum silicide and a tungsten silicide.
Claim 2
Independent Claim
118 words
A method of manufacturing a semiconductor device, comprising the steps of: forming, on a silicon substrate, a first film to be converted into a silicide; continuously forming a second film on said first film; and annealing a structure body constituted by said silicon substrate, said first film and said second film at a temperature at which said first film is reacted with said silicon substrate, thereby forming a silicide; and removing said second film from said silicide; wherein said first and second films are formed to have a thickness of about 5 to 40 nm; and wherein said second film is formed of a material selected from the group consisting of a platinum silicide and a tungsten silicide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-06-25 | 1999-12-25 | 2000-06-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-06-25 | 2003-12-25 | 2004-06-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-06-25 | 2007-12-25 | 2008-06-25 | $7700.00 | Window Closed / Lapsed |