US5529670A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of depositing conductors in high aspect ratio apertures under high temperature conditions
Assignee: Qimonda AG
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Filing: 1993-12-22
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Granted: 1996-06-25
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Expires: 2013-12-22
Abstract
Abstract A sputtering deposition wherein high aspect ratio apertures are coated with conductive films exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator is used having an aspect ratio that approximates the aspect ratio of the apertures. The resulting film thickness at the bottom of the aperture is at least 2× what can be achieved using conventional sputtering methods. The amount of material deposited at the bottom of the apertures can be further enhanced by elevating the temperature of the substrate (e.g. 450° C.) during the deposition process.
Inventors
- 👤 James G. Ryan
- 👤 David C. Strippe
- 👤 Bernd M. Vollmer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 21:41
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/34; H01J37/3411; H01J37/3447; C; C23; C23C; C23C14/00; C23C14/04; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H05; H05K; H05K3/00; H05K3/40; H05K3/4038; H05K3/4076
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
80 words
In a process for depositing a titanium or titanium alloy from a deposition source onto an integrated circuit substrate, the substrate having a surface topography that includes at least one depression having an aspect ratio of approximately 1:1 or greater, the improvement comprising interposing a collimator and heating the substrate to at least approximately 450° to 500° C. during the deposition to enhance the thickness of said titanium or titanium alloy film as deposited at the bottom of said depression.
Claim 2
Dependent Claim
80 words
In a process for depositing a titanium or titanium alloy from a deposition source onto an integrated circuit substrate, the substrate having a surface topography that includes at least one depression having an aspect ratio of approximately 1:1 or greater, the improvement comprising interposing a collimator and heating the substrate to at least approximately 450° to 500° C. during the deposition to enhance the thickness of said titanium or titanium alloy film as deposited at the bottom of said depression.
Claim 3
Dependent Claim
15 words
The process as recited in claim 1, wherein said alloy of titanium comprises titanium nitride.
Claim 4
Dependent Claim
20 words
The process as recited in claim 1, wherein the temperature of the substrate during the deposition is approximately 500° C.
Claim 5
Dependent Claim
18 words
The process as recited in claim 1, wherein apertures in said collimator have an aspect ratio of 2:1.
Claim 6
Dependent Claim
117 words
A process for depositing a layer of titanium or titanium alloy on a substrate having a surface topography that includes at least one horizontal surface and at least one depression having an aspect ratio of approximately 1:1 or greater, comprising: causing atoms of said titanium or titanium alloy to pass through a collimator having apertures there-through with an aspect ratio of approximately 1:1 or greater before being deposited on the substrate, the substrate being at a temperature of at least 450° to 500° C. during said deposition, whereby the thickness of the deposited layer at the bottom of the depression is enhanced relative to the thickness of the deposited layer at the horizontal surface of the substrate.
Claim 7
Dependent Claim
117 words
A process for depositing a layer of titanium or titanium alloy on a substrate having a surface topography that includes at least one horizontal surface and at least one depression having an aspect ratio of approximately 1:1 or greater, comprising: causing atoms of said titanium or titanium alloy to pass through a collimator having apertures there-through with an aspect ratio of approximately 1:1 or greater before being deposited on the substrate, the substrate being at a temperature of at least 450° to 500° C. during said deposition, whereby the thickness of the deposited layer at the bottom of the depression is enhanced relative to the thickness of the deposited layer at the horizontal surface of the substrate.
Claim 8
Dependent Claim
15 words
The process as recited in claim 5, wherein said alloy of titanium comprises titanium nitride.
Claim 9
Dependent Claim
21 words
The process as recited in claim 5, wherein the temperature of the substrate is at least 500° C. during the deposition.
Claim 10
Dependent Claim
90 words
A process for sputtering a titanium or titanium alloy barrier layer onto a substrate having high aspect ratio apertures formed therein, comprising: passing atoms of said titanium or titanium alloy from a sputtering source through a collimator having apertures therethrough with aspect ratios of approximately 1:1 or greater prior to deposition on the substrate, the substrate being at a temperature of approximately 450° to 500° C., to enhance the relative thickness of the titanium or titanium alloy deposited at the bottom of said apertures while maintaining substantially uniform sidewall thickness.
Claim 11
Dependent Claim
90 words
A process for sputtering a titanium or titanium alloy barrier layer onto a substrate having high aspect ratio apertures formed therein, comprising: passing atoms of said titanium or titanium alloy from a sputtering source through a collimator having apertures therethrough with aspect ratios of approximately 1:1 or greater prior to deposition on the substrate, the substrate being at a temperature of approximately 450° to 500° C., to enhance the relative thickness of the titanium or titanium alloy deposited at the bottom of said apertures while maintaining substantially uniform sidewall thickness.
Claim 12
Dependent Claim
17 words
The process recited in claim 8, wherein the substrate temperature is approximately 500° C. during said deposition.
Claim 13
Dependent Claim
63 words
In a process of sputtering titanium into a contact hole in a passivation layer disposed on a substrate, the contact hole having an aspect ratio of at least 1:1, the improvement comprising heating the substrate to approximately 450°-500° C. while depositing said titanium through a collimator having an aspect ratio of at least 1:1 disposed between a titanium sputter source and the substrate.
Claim 14
Dependent Claim
63 words
In a process of sputtering titanium into a contact hole in a passivation layer disposed on a substrate, the contact hole having an aspect ratio of at least 1:1, the improvement comprising heating the substrate to approximately 450°-500° C. while depositing said titanium through a collimator having an aspect ratio of at least 1:1 disposed between a titanium sputter source and the substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-06-25 | 1999-12-25 | 2000-06-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-06-25 | 2003-12-25 | 2004-06-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-06-25 | 2007-12-25 | 2008-06-25 | $7700.00 | Window Closed / Lapsed |