US4724060A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Sputtering apparatus with film forming directivity
Assignee: Hitachi Ltd
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Filing: 1985-11-14
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Granted: 1988-02-09
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Expires: 2005-11-14
Abstract
Abstract A target for use in a sputtering technique usually has a flat structure. The present invention has succeeded in endowing sputtering film formation with a directivity in such a way that the surface of the target is provided with recesses thereby to limit the flight directions of sputtering particles. Alternatively, the directivity can be bestowed by disposing a frame between a substrate to be formed with a film and the flat sputtering target. This measure requires auxiliary means in which a wall is provided at the outer periphery of the sputtering target so as to effectively utilize a plasma. The present invention actually formed films by the use of the above technique, and has verified the effect thereof. Wide applications are expected in technical fields wherein after forming a microscopic pattern, one or more films need to be further formed.
Inventors
- 👤 Masao Sakata
- 👤 Hideaki Shimamura
- 👤 Shigeru Kobayashi
- 👤 Tsuneyoshi Kawahito
- 👤 Tsuneaki Kamei
- 👤 Katsuo Abe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:15
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; H; H01; H01J; H01J37/00; H01J37/32; H01J37/34; H01J37/3411; H01J37/3414; H01J37/3423; H01J37/3402; H01J37/3405; H01J37/3408; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/332; H01J2237/3322; H01J2237/3327
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
252 words
A magnetron sputtering apparatus for enabling formation of a multi-layer interconnection having fine steps in a semiconductor device, comprising: a target member having a substantially planar surface portion and a protrusion at the periphery of the planar surface portion; means for holding the semiconductor device so that the surface of the semiconductor device faces the surface of the target member, the protrusion of the target member extending in a direction toward the surface of the semiconductor device, the holding means having means for at least one of rotating and moving the semiconductor device in a direction parallel to the surface of the target member; means for preventing film layer oerhang portions so as to enable formation of a film layer on the fine steps of via-holes of the semiconductor device without overhand portions, the overhang portion preventing means including a plurality of frame members extending perpendicularly, periodically and two-dimensionally proximate to the surface of the semiconductor device; means for generating a plasma on the target member; and means for magnetically moving the plasma for sputtering sputtered particles from a plurality of portions of the target member; said frame members having side wall portions for inhibiting sputtered particles flying from the target member in a direction diagonal to the perpendicular direction of the surface of the semiconductor device from impinging on the surface of the semiconductor device so as to prevent the formation of film layer overhang portions on the fine step of the via-holes for the multi-layer interconnection of the semiconductor device.
Claim 2
Dependent Claim
252 words
A magnetron sputtering apparatus for enabling formation of a multi-layer interconnection having fine steps in a semiconductor device, comprising: a target member having a substantially planar surface portion and a protrusion at the periphery of the planar surface portion; means for holding the semiconductor device so that the surface of the semiconductor device faces the surface of the target member, the protrusion of the target member extending in a direction toward the surface of the semiconductor device, the holding means having means for at least one of rotating and moving the semiconductor device in a direction parallel to the surface of the target member; means for preventing film layer oerhang portions so as to enable formation of a film layer on the fine steps of via-holes of the semiconductor device without overhand portions, the overhang portion preventing means including a plurality of frame members extending perpendicularly, periodically and two-dimensionally proximate to the surface of the semiconductor device; means for generating a plasma on the target member; and means for magnetically moving the plasma for sputtering sputtered particles from a plurality of portions of the target member; said frame members having side wall portions for inhibiting sputtered particles flying from the target member in a direction diagonal to the perpendicular direction of the surface of the semiconductor device from impinging on the surface of the semiconductor device so as to prevent the formation of film layer overhang portions on the fine step of the via-holes for the multi-layer interconnection of the semiconductor device.
Claim 3
Dependent Claim
25 words
A magnetron sputtering apparatus according to claim 1, wherein the target member is an aluminum member for forming an aluminum film on the semiconductor device.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-02-08 | 1991-08-10 | 1992-02-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-02-08 | 1995-08-10 | 1996-02-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-02-08 | 1999-08-10 | 2000-02-09 | $7700.00 | Window Closed / Lapsed |