Formation of thin-film

Abstract

Abstract PURPOSE:To arrange a conductive thin film flat over the minute unevenness of high aspect ratio by changing a distribution of flying directions of sputtering particles to a substrate according to a degree of unevenness of the surface of the substrate or intercepting the sputtering particles being incident from a direction which is largely inclined from a vertical direction of the substrate. CONSTITUTION:An SiO2 thin film 102 on an even Si substrate 101 is provided with minute holes. A shielding plate is arranged between the substrate and a sputtering target and the hole of the shielding plate is made narrow to prevent sputtering particles being incident from a direction which is largely inclined from a vertical line, thereby selecting bias sputtering condition. As a result, though a step coverage of shoulder parts of the hole is not good, there is no hangover of a deposited film from the shoulder parts and the film thickness which is almost the same as that of the surface of the substrate is formed also at the bottom of the hole. Next, the hole of the shielding plate is enlarged and the bias sputtering condition is selected. Then, an Al film 104 is deposited while making a film depositing rate at the bottom part larger than that on the hole stepped parts. By this constitution, a conductive film can be deposited with a high evenness of the surface without a shadow effect even the minute holes are of steep side planes and with high aspect ratio.

Inventors

• 👤 Toru Mogami
• 👤 徹 最上

Bibliographic Details