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US5529634A Expired / Lapsed US ⏱️ 0.0 years remaining

Apparatus and method of manufacturing semiconductor device

Assignee: Toshiba Corp
•
Filing: 1995-04-19
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Granted: 1996-06-25
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Expires: 2015-04-19
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Abstract

Abstract An evaporation chamber for forming fine metal particles is separated from a film formation chamber in which the substrate having a metal film such as a metal column thereon is placed during metal film deposition. The pressure of the film formation chamber is set to be lower than that of the evaporation chamber, and the fine metal particles are sprayed on the substrate by the pressure difference to form the metal column. Therefore, a wiring layer, a connection electrode for connecting the wiring layer to another wiring layer, and the like can easily be formed by a small number of steps.

Inventors

  • 👤 Masahiro Miyata
  • 👤 Hidemitsu Egawa
  • 👤 Johta Fukuhara
  • 👤 Shinzi Takeda
  • 👤 Hirokazu Ezawa

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-06 09:03
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/228; C23C14/04; H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063; H10W20/40; H10W20/41; H10W20/42; H10W20/44; H10W20/4403; H10W20/4432; H10W72/00; H10W72/01; H10W72/012; H10W72/01251; H10W72/01255; H10W72/20; H10W72/251; H10W72/90; H10W72/951; H10W72/952

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 127 words
A metal film forming apparatus comprising: a first vacuum chamber in which a crucible for heating and evaporating a material to be melted is arranged; means for supplying an inert gas into said first vacuum chamber; a second vacuum chamber in which a target substrate is arranged; means for feeding said inert gas from said first chamber to said second vacuum chamber; and means, arranged in said first chamber, for regulating a flow of said inert gas in said first chamber such that a normal erected on a central point of a surface of a molten material in said crucible is defined as an axis of symmetry of said flow of said inert gas when the material to be melted is heated and melted by said crucible.
Claim 2
Dependent Claim 127 words
A metal film forming apparatus comprising: a first vacuum chamber in which a crucible for heating and evaporating a material to be melted is arranged; means for supplying an inert gas into said first vacuum chamber; a second vacuum chamber in which a target substrate is arranged; means for feeding said inert gas from said first chamber to said second vacuum chamber; and means, arranged in said first chamber, for regulating a flow of said inert gas in said first chamber such that a normal erected on a central point of a surface of a molten material in said crucible is defined as an axis of symmetry of said flow of said inert gas when the material to be melted is heated and melted by said crucible.
Claim 3
Dependent Claim 44 words
An apparatus according to claim 1, wherein said regulating means feeds said inert gas into said first chamber through a space having an obstacle to a flow direction in a gas supply pipe used when said inert gas is fed into said first chamber.
Claim 4
Dependent Claim 37 words
An apparatus according to claim 2, wherein metal fibers are filled in said gas supply pipe as said obstacle so that said inert gas is supplied into said first chamber through opening area of said metal fiber.
Claim 5
Dependent Claim 20 words
An apparatus according to claim 2, wherein a distal end of said gas supply pipe has a ring-like cylindrical shape.
Claim 6
Dependent Claim 41 words
An apparatus according to claim 1, wherein a flow velocity of regulated inert gas is slower than that of fine particles which are produced by cooling steam evaporated from said surface of said molten material by means of said inert gas.
Claim 7
Dependent Claim 27 words
An apparatus according to claim 2, wherein said obstacle is a filter a main surface of which is made of stainless steel fibers in a mesh form.

References Cited (Backward Citations)

DE2460989A1 Cited
US4389973A Cited
US4582731A Cited
JPS61161722A Cited
US4714047A Cited
US4848273A Cited
JPS62260053A Cited
US5328078A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1999-06-25 1999-12-25 2000-06-25 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2003-06-25 2003-12-25 2004-06-25 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2007-06-25 2007-12-25 2008-06-25 $7700.00 Window Closed / Lapsed

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