US4848273A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Epitaxial growth method and apparatus therefor
Assignee: NTT Inc
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Filing: 1987-09-01
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Granted: 1989-07-18
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Expires: 2007-09-01
Abstract
Abstract In an epitaxial growth method of this invention, a first gas consisting of a hydrogen diluted gas containing a Group V element is continuously flowed on a monocrystalline substrate that is placed in a reaction chamber, the monocrystalline substrate is arranged in a gas mixing region where the first gas and a second gas containing a halogenide of a Group III element are mixed adjacent to the monocrystalline substrate, and a Group III-V compound semiconductor is grown on the monocrystalline substrate.
Inventors
- 👤 Hidefumi Mori
- 👤 Nobuyori Tsuzuki
- 👤 Mitsuo Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 18:09
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/14; C30B25/18; Y; Y10; Y10S; Y10S148/00; Y10S148/057; Y10S148/065; Y10S438/00; Y10S438/933
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
131 words
An epitaxial growth apparatus comprising: a first flow path, formed in a reaction chamber, for flowing a first gas containing a hydrogen diluted gas containing a Group V element; a second flow path, formed in said reaction chamber, for flowing a second gas containing a halogenide of a Group III element; and a support member for a monocrystalline substrate arranged in said reaction chamber, end portions of said first and second flow paths in said reaction chamber being arranged so as to constitute a gas mixing region wherein said first and second gases are mixed, and said support member displacing said monocrystalline substrate between said first flow path and said gas mixing region such that growth of a Group III-V compound semiconductor on the surface of said monocrystalline substrate is allowed.
Claim 2
Dependent Claim
131 words
An epitaxial growth apparatus comprising: a first flow path, formed in a reaction chamber, for flowing a first gas containing a hydrogen diluted gas containing a Group V element; a second flow path, formed in said reaction chamber, for flowing a second gas containing a halogenide of a Group III element; and a support member for a monocrystalline substrate arranged in said reaction chamber, end portions of said first and second flow paths in said reaction chamber being arranged so as to constitute a gas mixing region wherein said first and second gases are mixed, and said support member displacing said monocrystalline substrate between said first flow path and said gas mixing region such that growth of a Group III-V compound semiconductor on the surface of said monocrystalline substrate is allowed.
Claim 3
Dependent Claim
30 words
An apparatus according to claim 1, wherein said support member for said monocrystalline substrate is movable between said gas mixing region and a region that only said first gas flows.
Claim 4
Dependent Claim
36 words
An apparatus according to claim 1, wherein the end portion of said first flow path adjacent to said gas mixing region has a smaller sectional area than that of the other portion of said flow path.
Claim 5
Dependent Claim
30 words
An apparatus according to claim 3, wherein said support member for said monocrystalline substrate is movable between said gas mixing region and the region that only said first gas flows.
Claim 6
Dependent Claim
19 words
An apparatus according to claim 1, wherein said first flow path is arranged parallel to said second flow path.
Claim 7
Dependent Claim
33 words
An apparatus according to claim 1, wherein a gas inlet of said first flow path is formed in said reaction chamber so as to face a gas inlet of said second flow path.
References Cited (Backward Citations)
US3312570A
Cited
US3312571A
Cited
US3594242A
Cited
US4088515A
Cited
US4204893A
Cited
US4253887A
Cited
US4407694A
Cited
US4488914A
Cited
US4561916A
Cited
US4629532A
Cited
US4645689A
Cited
US4588451A
Cited
US4579609A
Cited
US4664743A
Cited
US4736705A
Cited
JPH0650169A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-07-17 | 1993-01-16 | 1993-07-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-07-17 | 1997-01-16 | 1997-07-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-07-17 | 2001-01-16 | 2001-07-18 | $7700.00 | Window Closed / Lapsed |