Electrically conductive interconnection through a body of semiconductor material

Claim 2

An electrically conductive interconnection formed in a body of semiconductor material comprising: a body of semiconductor material having a first and a second major planar surface; and an electrically conductive interconnection comprising an alloy of a conductive material and the material of the body of semiconductor material, said electrically conductive interconnection including a body portion, a first and a second end portion, said body portion being integrally formed between said first and second end portions, said conductive interconnection being formed by partially migrating said conductive material in said body of semiconductor material from said first planar surface toward a third planar surface, and having said third planar surface removed exposing said second planar surface and retaining said partially migrated conductive material including said first end portion which is substantially higher in alloy content with said electrically conductive material than the other portions.

Claim 3

The electrically conductive interconnection as set forth in claim 1 wherein said first end portion being pyramidal in shape with a truncated apex portion thereof having a cross-sectional area smaller than the cross-sectional area of said body portion, said cross-sectional area of said truncated apex portion being coplanar with said second major planar surface.

Claim 4

The electrically conductive interconnection as set forth in claim 1 wherein said first end portion being pyramidal in shape and having an apex portion thereof partially protruding beyond said second major planar surface of said body of semiconductor material.

Claim 5

The electrically conductive interconnection as set forth in claim 1 wherein said second major planar surface further comprising a recess having a sidewall portion and a bottom portion, and with said first end portion of said electrical interconnection protruding beyond said bottom portion of said recess.

Claim 6

The electrically conductive interconnection as set forth in claim 1 further comprising a first shank portion integrally formed between said body portion and said first end portion, and with said first shank portion and said first end portion protruding beyond said second major planar surface.

Claim 7

The electrically conductive interconnection formed in a body of semiconductor material as set forth in claim 1 wherein said conductive material comprises aluminum, and wherein said body of semiconductor material comprises silicon.

Claim 8

An electrically conductive interconnection formed in a body of semiconductor material comprising: a body of semiconductor material having a first and a second major planar surface; and an electrically conductive interconnection comprising an alloy of a conductive material and the material of the body of semiconductor material, said electrically conductive interconnection including a body portion, a first and a second end portion, said body portion being integrally formed between said first and second end portions, said conductive interconnection being formed by partially migrating said conductive material in said body of semiconductor material from said first planar surface toward a third planar surface, and having said third planar surface removed exposing said second planar surface and retaining said partially migrated conductive material including said first end portion which is substantially higher in content with said electrically conductive material than the other portions, wherein said conductive material comprises copper and said body of semiconductor material comprises silicon.

Claim 9

An electrically conductive interconnection formed in a body of semiconductor material comprising: a body of semiconductor material having a first and a second major planar surface; and an electrically conductive interconnection comprising an alloy of a conductive material and the material of the body of semiconductor material, said electrically conductive interconnection including a body portion, a first and a second end portion, said body portion being integrally formed between said first and second end portions, said conductive interconnection being formed by partially migrating said conductive material in said body of semiconductor material from said first planar surface toward a third planar surface, and having said third planar surface removed exposing said second planar surface and retaining said partially migrated conductive material including said first end portion which is substantially higher in content with said electrically conductive material than the other portions, wherein said conductive material comprises copper and said body of semiconductor material comprises silicon.

Claim 10

An electrically conductive interconnection formed in a body of semiconductor material comprising: a body of semiconductor material having a first and a second major planar surface; and an electrically conductive interconnection comprising an alloy of a conductive material and the material of the body of semiconductor material, said electrically conductive interconnection including a body portion, a first and a second end portion, said body portion being integrally formed between said first and second end portions, said conductive interconnection being formed by partially migrating said conductive material in said body of semiconductor material from said first planar surface toward a third planar surface, and having said third planar surface removed exposing said second planar surface and retaining said partially migrated conductive material including said first end portion which is substantially higher in content with said electrically conductive material than the other portions, wherein said conductive material comprises gold and said body of semiconductor material comprises silicon.

Claim 11

An electrically conductive interconnection formed in a body of semiconductor material comprising: a body of semiconductor material having a first and a second major planar surface; and an electrically conductive interconnection comprising an alloy of a conductive material and the material of the body of semiconductor material, said electrically conductive interconnection including a body portion, a first and a second end portion, said body portion being integrally formed between said first and second end portions, said conductive interconnection being formed by partially migrating said conductive material in said body of semiconductor material from said first planar surface toward a third planar surface, and having said third planar surface removed exposing said second planar surface and retaining said partially migrated conductive material including said first end portion which is substantially higher in content with said electrically conductive material than the other portions, wherein said conductive material comprises gold and said body of semiconductor material comprises silicon.

Claim 12

An electrically conductive interconnection formed in a body of semiconductor material comprising: a body of semiconductor material having a first and a second major planar surface; and an electrically conductive interconnection comprising an alloy of a conductive material and the material of the body of semiconductor material, said electrically conductive interconnection including a body portion, a first and a second end portion, said body portion being integrally formed between said first and second end portions, said conductive interconnection being formed by partially migrating said conductive material in said body of semiconductor material from said first planar surface toward a third planar surface, and having said third planar surface removed exposing said second planar surface and retaining said partially migrated conductive material including said first end portion which is substantially higher in content with said electrically conductive material than the other portions; wherein said conductive interconnection further including a first and second shank portions integrally formed between said body portion and said first and second end portions, respectively, and with said first and second shank portions protruding beyond said second and first major planar surfaces, respectively.

Claim 13

An electrically conductive interconnection formed in a body of semiconductor material comprising: a body of semiconductor material having a first and a second major planar surface; and an electrically conductive interconnection comprising an alloy of a conductive material and the material of the body of semiconductor material, said electrically conductive interconnection including a body portion, a first and a second end portion, said body portion being integrally formed between said first and second end portions, said conductive interconnection being formed by partially migrating said conductive material in said body of semiconductor material from said first planar surface toward a third planar surface, and having said third planar surface removed exposing said second planar surface and retaining said partially migrated conductive material including said first end portion which is substantially higher in content with said electrically conductive material than the other portions; wherein said conductive interconnection further including a first and second shank portions integrally formed between said body portion and said first and second end portions, respectively, and with said first and second shank portions protruding beyond said second and first major planar surfaces, respectively.