US4720308A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing high-aspect ratio hollow diffused regions in a semiconductor body and diode produced thereby
Assignee: Fairchild Semiconductor Corp
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Filing: 1986-03-24
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Granted: 1988-01-19
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Expires: 2006-03-24
Abstract
Abstract A semiconductor device and a method for its preparation are disclosed, wherein a body of semiconducting material has at least one bore extending completely therethrough, this bore having a substantially constant diameter of less than about 1.5 mils and an average length-to-diameter ratio of at least about 6:1, this bore being defined by a region of the semiconducting material in the recrystallized state having therein throughout the region a substantially constant uniform concentration level of atoms of at least one metal selected from the group consisting of aluminum, indium, gallium, antimony, gold, silver and tin in addition to the initial content of the semiconducting material.
Inventors
- 👤 Thomas R. Anthony
- 👤 Douglas E. Houston
- 👤 James A. Loughran
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 17:24
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/14; H10P34/00; H10P34/40; H10P34/42; H10P95/00; H10P95/50
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
138 words
In a semiconducting device wherein a body of semiconducting material has at least one bore extending completely therethrough, said bore having a diameter of less than about 1.5 mils and an average length-to-diameter ratio of at least about 6:1, the improvement wherein said bore is defined by a region in the shape of a hollow cylinder, said region of said semiconducting material being in the recrystallized state and having therein throughout said region a substantially constant uniform concentration level of metal atoms in a direction perpendicular to the bore length, wherein a P-N junction providing the interface between the recrystallized region and the material of the semiconductor body contiguous with said region has a width of less than about 1 micron, said metal being selected from the group consisting of aluminum, indium, gallium, antimony, gold, silver and tin.
Claim 2
Dependent Claim
138 words
In a semiconducting device wherein a body of semiconducting material has at least one bore extending completely therethrough, said bore having a diameter of less than about 1.5 mils and an average length-to-diameter ratio of at least about 6:1, the improvement wherein said bore is defined by a region in the shape of a hollow cylinder, said region of said semiconducting material being in the recrystallized state and having therein throughout said region a substantially constant uniform concentration level of metal atoms in a direction perpendicular to the bore length, wherein a P-N junction providing the interface between the recrystallized region and the material of the semiconductor body contiguous with said region has a width of less than about 1 micron, said metal being selected from the group consisting of aluminum, indium, gallium, antimony, gold, silver and tin.
Claim 3
Dependent Claim
30 words
The improved semiconductor device of claim 1 wherein the recrystallized region has a conductivity type opposite to, and resistivity lower than, the material of the body contiguous with said region.
Claim 4
Dependent Claim
25 words
The improved semiconductor device of claim 2 wherein the semiconducting material is silicon and the metal atoms in substantially constant uniform concentration are aluminum atoms.
Claim 5
Dependent Claim
24 words
The improved semiconductor device of claim 3 wherein the concentration of aluminum atoms in the recrystallized region is about 1.4×10 19 atoms/cm 3 .
References Cited (Backward Citations)
US2890976A
Cited
JPS4934397A
Cited
US3899361A
Cited
US3901736A
Cited
US4570173A
Cited
US4527183A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-01-18 | 1991-07-20 | 1992-01-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-01-18 | 1995-07-20 | 1996-01-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-01-18 | 1999-07-20 | 2000-01-19 | $7700.00 | Window Closed / Lapsed |