US4773972A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making silicon capacitive pressure sensor with glass layer between silicon wafers
Assignee: University of Michigan (System)
•
Filing: 1986-10-30
•
Granted: 1988-09-27
•
Expires: 2006-10-30
Abstract
Abstract A method of bonding two silicon wafers each having a capacitive plate. Two highly-doped electrically semiconductive feedthrough paths are formed through one wafer, each path contacting one of the capacitive plates. A glass layer is formed on one of the silicon wafers where bonding is desired between the two wafers. The glass layer is anodically bonded to the other of the silicon layers.
Inventors
- 👤 Mati Mikkor
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 20:38
CPC Classifications
B; B81; B81C; B81C1/00; B81C1/00015; B81C1/00261; B81C1/00301; G; G01; G01L; G01L9/00; G01L9/0041; G01L9/0072; G01L9/0073; B81B; B81B2201/00; B81B2201/02; B81B2201/0264; B81B2207/00; B81B2207/09; B81B2207/091; B81B2207/094; B81B2207/096; G01B; G01B2210/00; G01B2210/64; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082; Y10T29/49103
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
239 words
A method bonding two silicon wafers to form a capacitive pressure sensor including the steps of: forming a first silicon wafer, forming a second silicon wafer, forming a first capacitive electrode on said first silicon wafer; forming a second capacitive electrode on said second silicon wafer; forming a first and second highly doped electrically semiconductive feedthrough path through the second silicon wafer, so that the first path can be used to contact the first capacitive electrode and the second path can be used to contact the second capacitive electrode; forming a first glass layer, with sodium ions and coefficient of thermal expansion close to that of silicon, on the first silicon wafer; forming a metal layer on a region of the first glass layer; forming a second glass layer on the metal layer and on a region of the first glass layer devoid of said metal layer; and anodically bonding the first and second glass layers respectively to the first and second silicon wafers in the region of the metal layer and anodically bonding the first and second silicon wafers to each other in the region devoid of said metal layer, wherein the step of anodically bonding includes applying a voltage between the metal layer and the silicon wafers to be anodically bonded to the glass layers, and wherein forming the first and second silicon wafers includes lightly doping the first and second silicon wafers with an n-type carrier.
Claim 2
Independent Claim
239 words
A method bonding two silicon wafers to form a capacitive pressure sensor including the steps of: forming a first silicon wafer, forming a second silicon wafer, forming a first capacitive electrode on said first silicon wafer; forming a second capacitive electrode on said second silicon wafer; forming a first and second highly doped electrically semiconductive feedthrough path through the second silicon wafer, so that the first path can be used to contact the first capacitive electrode and the second path can be used to contact the second capacitive electrode; forming a first glass layer, with sodium ions and coefficient of thermal expansion close to that of silicon, on the first silicon wafer; forming a metal layer on a region of the first glass layer; forming a second glass layer on the metal layer and on a region of the first glass layer devoid of said metal layer; and anodically bonding the first and second glass layers respectively to the first and second silicon wafers in the region of the metal layer and anodically bonding the first and second silicon wafers to each other in the region devoid of said metal layer, wherein the step of anodically bonding includes applying a voltage between the metal layer and the silicon wafers to be anodically bonded to the glass layers, and wherein forming the first and second silicon wafers includes lightly doping the first and second silicon wafers with an n-type carrier.
Claim 3
Dependent Claim
65 words
A method of bonding two silicon wafers as recited in claim 1 wherein: forming the first capacitive electrode including forming a diaphragm with a highly doped p+ type conductive region on the side of the first silicon wafer facing the second silicon wafer; and forming the second capacitive electrode includes forming a metallization on the second silicon wafer facing the diaphragm of the first wafer.
Claim 4
Dependent Claim
53 words
A method bonding two silicon wafers as recited in claim 2 wherein the step of forming the first and second feedthrough paths includes aligning the first feedthrough path with the first capacitive electrode in a spaced relationship to the second capacitive electrode and aligning the second feedthrough path with the second capacitive path.
Claim 5
Dependent Claim
79 words
A method of bonding two silicon wafers as recited in claim 5 wherein the stop of forming the first and second paths includes the steps of: forming a recessed feedthrough well at the location of each path thereby reducing the thickness of the second silicon wafer at the location of the path; forming a highly doped p+ conductive region on the surface of the feedthrough well; and forming a metal conductive path along the surface of the feedthrough well.
Claim 6
Dependent Claim
43 words
A method of bonding two silicon wafers as recited in claim 4 further comprising the step of forming a metal contact pad on the side of the second silicon wafer facing the first silicon wafer at the location of the first conductive path.
Claim 7
Dependent Claim
65 words
A method of bonding two silicon wafers as recited in claim 1 wherein the step of forming the first capacitive electrode includes: forming a cavity in the first silicon wafer thereby defining a diaphragm for the capacitive pressure sensor; forming a silicon dioixde layer on the side of the diaphragm facing the second silicon wafer; and forming a first metallization on the silicon dioxide layer.
Claim 8
Dependent Claim
32 words
A method of bonding two silicon wafers as recited in claim 6 wherein said step of anodically bonding includes applying a voltage between the first silicon wafer and the second silicon wafer.
Claim 9
Dependent Claim
54 words
A method of bonding two silicon wafers as recited in claim 7 further comprising the step of etching the surface of the first silicon wafer adjacent the periphery of the silicon dioxide layer so as to form a relatively even surface to improve the fit and coupling between the first and second silicon wafers.
Claim 10
Dependent Claim
83 words
A method of bonding two silicon wafers as recited in claim 1 wherein the step of forming the first capacitive electrode includes forming a first metallization on the glass layer; and the step of forming the second capacitive electrode includes: forming a cavity in the second silicon wafer thereby defining a diaphragm for the capacitive pressure sensor; forming a silicon dioxide layer on the side of the diaphragm facing the first silicon wafer; and forming a second metallization on the silicon dioxide layer.
Claim 11
Dependent Claim
54 words
A method of bonding two silicon wafers as recited in claim 7 further comprising the step of etching the surface of the second silicon wafer adjacent the periphery of the silicon dioxide layer so as to form a relatively even surface to improve the fit and coupling between the first and second silicon wafers.
References Cited (Backward Citations)
GB825770A
Cited
US3397278A
Cited
US3372070A
Cited
US3589965A
Cited
US3979820A
Cited
US4177496A
Cited
US4207604A
Cited
US4184189A
Cited
US4261086A
Cited
US4386453A
Cited
US4345299A
Cited
US4390925A
Cited
US4415948A
Cited
US4420790A
Cited
US4424713A
Cited
US4609966A
Cited
US4625561A
Cited
US4586109A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-09-27 | 1992-03-28 | 1992-09-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-09-27 | 1996-03-28 | 1996-09-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-09-27 | 2000-03-28 | 2000-09-27 | $7700.00 | Window Closed / Lapsed |