US3372070A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication of semiconductor integrated devices with a pn junction running through the wafer
Assignee: AT&T Inc
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Filing: 1965-07-30
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Granted: 1968-03-05
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Expires: 1985-07-30
Abstract
No abstract record available.
Inventors
- 👤 Zuk Paul
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 17:41
CPC Classifications
H; H10; H10D; H10D88/00; H10W; H10W20/00; H10W20/01; H10W20/021; H10W20/20; H10W72/00; H10W72/20; Y; Y10; Y10S; Y10S148/00; Y10S148/049; Y10S148/051; Y10S148/071; Y10S148/085; Y10S438/00; Y10S438/965
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
60 words
THE METHOD OF FABRICATING A SEMICONDUCTOR DEVICE INCLUDING THE STEPS OF FORMING A SLICE OF SEMICONDUCTOR MATERIAL, PERFORATING SAID SLICE TO FORM AT LEAST ONE HOLE THERETHROUGH, SAID HOLE HAVING A WALL, DIFFUSING A SIGNIFICANT IMPURITY THROUGH THE WALL OF SAID HOLE TO ALTER THE CONDUCTIVITY OF A ZONE ADJOINING SAID WALL, VAPOR-DEPOSITING SEMICONDUCTOR MATERIAL OF THE SAME CONDUCTIVITY TYPE
Claim 2
Independent Claim
60 words
THE METHOD OF FABRICATING A SEMICONDUCTOR DEVICE INCLUDING THE STEPS OF FORMING A SLICE OF SEMICONDUCTOR MATERIAL, PERFORATING SAID SLICE TO FORM AT LEAST ONE HOLE THERETHROUGH, SAID HOLE HAVING A WALL, DIFFUSING A SIGNIFICANT IMPURITY THROUGH THE WALL OF SAID HOLE TO ALTER THE CONDUCTIVITY OF A ZONE ADJOINING SAID WALL, VAPOR-DEPOSITING SEMICONDUCTOR MATERIAL OF THE SAME CONDUCTIVITY TYPE
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-03-05 | 1971-09-04 | 1972-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-03-05 | 1975-09-04 | 1976-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-03-05 | 1979-09-04 | 1980-03-05 | $7700.00 | Window Closed / Lapsed |