Integrated circuit package

Claim 2

An integrated circuit package for housing an integrated circuit chip and for providing electrical connectivity of data signals and voltage signals between the integrated circuit chip and an electronic component, the package comprising: a carrier substrate having a first surface including a die attach region and a signal layer region; an integrated circuit chip affixed to the die attach region, the integrated circuit chip including a plurality of bonding pads; at least three conductive layers on the signal layer region of the substrate for conducting electrical signals, the conductive layers comprising a single signal layer, at least a first voltage layer for providing a first reference voltage signal to the integrated circuit chip and a second voltage layer for providing a second reference voltage signal to the integrated circuit chip, the first voltage layer comprising a reference ground layer adjacent to the substrate for providing a ground signal to the integrated circuit chip and the second voltage layer comprising a reference voltage layer closely coupled to the reference ground layer thereby providing a predetermined significant level of decoupling capacitance therebetween; a plurality of bond wires having a predetermined length, each bond wire electrically connecting a single bonding pad of the integrated circuit chip to a single bonding pad of the signal layer each bond wire being disposed parallel one to each other to route all of the data signals on the single signal layer to minimize the length of the bond wires; at least first and second dielectric layers, each dielectric layer having a predetermined dielectric constant, the at least first dielectric layer being disposed between the first and second voltage layers, and the at least second dielectric layer being disposed between the second voltage layer and the signal layer, the dielectric constant of the at least second dielectric layer being less than the dielectric constant of the first layer; and a plurality of electrical connections for interconnecting the chip bonding pads with the electronic component by way of at least one of the conductive layers for conducting electrical signals therebetween.

Claim 3

The package of claim 1 wherein the at least three conductive layers comprises four conductive layers, said four layers comprising a reference ground layer adjacent to the substrate for providing a ground signal to the integrated circuit chip, a first reference voltage layer closely coupled to the reference ground layer for providing a first voltage signal to the integrated circuit chip, a second reference voltage layer for providing a second reference voltage to the integrated circuit chip, and a signal layer.

Claim 4

The package of claim 1 wherein the first voltage layer comprises a ground plane which is attached to the carrier substrate with an electrically conductive thermoplastic.

Claim 5

The package of claim 1 wherein the first voltage layer comprises a ground plane which is integral to the carrier substrate.

Claim 6

The package of claim 1 wherein the first voltage layer comprises a ground plane adjacent to the carrier substrate, the second voltage layer comprises a plane parallel to the first voltage layer, and the signal layer comprises a plane parallel to the second voltage layer, wherein the dielectric layer between the signal layer and the second voltage layer has a low dielectric constant.

Claim 7

The package of claim 1 wherein the signal layer includes a perimeter; and the carrier substrate extends beyond the perimeter of the signal layer.

Claim 8

The package of claim 1 wherein the first voltage layer comprises a ground plane adjacent to the carrier substrate, the second voltage layer comprises a plane parallel to the first voltage layer, and the signal layer comprises a plane parallel to the second voltage layer, wherein the dielectric layer between the first and second voltage layers has a high dielectric constant.

Claim 9

The package of claim 1 wherein the die attach region comprises a cavity recessed in the first surface of the carrier substrate.

Claim 10

The package of claim 1 wherein the carrier substrate comprises a thermal spreader.

Claim 11

The package of claim 1 wherein the carrier substrate has a coefficient of thermal expansion which matches a coefficient of thermal expansion of the integrated circuit chip.

Claim 12

The package of claim 1 wherein the carrier substrate has a coefficient of thermal expansion intermediate to a coefficient of thermal expansion of the integrated circuit chip and a coefficient of thermal expansion of the electronic component.

Claim 13

The package of claim 2 wherein the plurality of electrical connections for interconnecting the chip bonding pads with the electronic component composes: a plurality of package leads electrically connected to at least one of the conductive layers for providing electrical connectivity between the package and the electronic component; a plurality of electrical connections between the integrated circuit chip bonding pads and at least one of the conductive layers; a first plurality of interconnect vias from the conductive layer which the chip bonding pads are connected to the at least first and second voltage layers for electrically connecting a plurality of the chip bonding pads to the first and second voltage layers, each via connecting said conductive layer to one of the first and second voltage layers; and a second plurality of interconnect vias from the conductive layer which the package leads are connected to the at least first and second voltage layers for electrically connecting a plurality of the package leads to the first and second voltage layers, each via connecting said conductive layer to one of the first and second voltage layers.

Claim 14

The package of claim 5 wherein the low dielectric constant layer comprises a fluoropolymer based material layer.

Claim 15

The package of claim 8 wherein the integrated circuit chip is affixed to the die attach region with a thermoplastic, conductive adhesive.

Claim 16

The package of claim 9 wherein the integrated circuit chip is affixed to the thermal spreader with a thermoplastic adhesive.

Claim 17

The package of claim 9 wherein the thermal spreader comprises a metal.

Claim 18

The package of claim 12 wherein the electrical connections between the chip bonding pads and the at least one of the conductive layers comprise wire bonds.

Claim 19

The package of claim 12 wherein the first plurality of interconnect vias for connecting the first and second voltage layers to the chip bonding pads are adjacent to the die attach region so that an interconnect distance between the chip bonding pads and the first and second voltage layers is minimized.

Claim 20

The package of claim 12 wherein the package leads compose a ball grid array.

Claim 21

The package of claim 12 wherein the package leads compose a land grid array.

Claim 22

The package of claim 13 wherein the fluoropolymer based material layer comprises cyanate ester impregnated PTFE.

Claim 23

The package of claim 16 wherein the metal has a coefficient of thermal expansion which matches a coefficient of thermal expansion of the electronic component.

Claim 24

The package of claim 17 further comprising an encapsulant formed around the integrated circuit chip and the wire bonds to encapsulate the integrated circuit chip and the wire bonds.

Claim 25

The package of claim 18 wherein the second plurality of interconnect vias for connecting the package leads to the first and second voltage layers are adjacent to an outer perimeter of the carrier substrate.

Claim 26

An integrated circuit package for housing an integrated circuit chip and providing electrical connectivity of data signals and voltage signals between the integrated circuit chip and an electronic component, the package comprising: a carrier substrate having a first surface including a die attach region, a signal layer region and an outer perimeter; an integrated circuit chip affixed to the die attach region, the integrated circuit chip including a plurality of bonding pads; at least three conductive layers on the signal layer region of the substrate for conducting electrical signals, the conductive layers comprising a single signal layer, at least a first voltage layer for providing a first reference voltage signal to the integrated circuit chip and a second voltage layer for providing a second reference voltage signal to the integrated circuit chip, the first voltage layer comprising a reference ground layer adjacent to the substrate for providing a ground to signal to the integrated circuit chip and the second voltage layer comprising a reference voltage layer closely coupled to the reference ground layer thereby providing a predetermined significant level of decoupling capacitance therebetween, and the first and second voltage layers comprise power and ground layers, the power and ground layers being closely coupled to provide low power to ground inductance; at least first and second dielectric layers, each dielectric layer having a predetermined dielectric constant, the at least first dielectric layer being disposed between the first and second voltage layers, and the at least second dielectric layer being disposed between the second voltage layer and the signal layer, the dielectric constant of the at least second dielectric layer being less than the dielectric constant of the first layer; and a plurality of wire bonds having a predetermined length, each bond wire electrically connecting a single bonding pad of the integrated circuit chip to a single bonding pad of the signal layer, each bond wire being disposed parallel one to each other to route all of the data signals on the single signal layer to minimize the length of the bond wires; an encapsulant formed around the integrated circuit chip and the wire bonds to encapsulate the integrated circuit chip and the wire bonds; a first plurality of interconnect vias between the signal layer and the voltage layers for providing electrical connectivity between the voltage layers and the signal layer located adjacent to the integrated circuit chip; a plurality of package leads electrically connected to the signal layer for providing electrical connectivity between the electronic component and the package; and a second plurality of interconnect vias between the signal layer and the voltage layers for providing electrical connectivity between the package leads and the first and second voltage layers, the second plurality of vias being located proximate to the outer perimeter of the substrate.

Claim 27

An integrated circuit package for housing an integrated circuit chip and providing electrical connectivity of data signals and voltage signals between the integrated circuit chip and an electronic component, the package comprising: a carrier substrate having a first surface including a die attach region, a signal layer region and an outer perimeter; an integrated circuit chip affixed to the die attach region, the integrated circuit chip including a plurality of bonding pads; at least three conductive layers on the signal layer region of the substrate for conducting electrical signals, the conductive layers comprising a single signal layer, at least a first voltage layer for providing a first reference voltage signal to the integrated circuit chip and a second voltage layer for providing a second reference voltage signal to the integrated circuit chip, the first voltage layer comprising a reference ground layer adjacent to the substrate for providing a ground to signal to the integrated circuit chip and the second voltage layer comprising a reference voltage layer closely coupled to the reference ground layer thereby providing a predetermined significant level of decoupling capacitance therebetween, and the first and second voltage layers comprise power and ground layers, the power and ground layers being closely coupled to provide low power to ground inductance; at least first and second dielectric layers, each dielectric layer having a predetermined dielectric constant, the at least first dielectric layer being disposed between the first and second voltage layers, and the at least second dielectric layer being disposed between the second voltage layer and the signal layer, the dielectric constant of the at least second dielectric layer being less than the dielectric constant of the first layer; and a plurality of wire bonds having a predetermined length, each bond wire electrically connecting a single bonding pad of the integrated circuit chip to a single bonding pad of the signal layer, each bond wire being disposed parallel one to each other to route all of the data signals on the single signal layer to minimize the length of the bond wires; an encapsulant formed around the integrated circuit chip and the wire bonds to encapsulate the integrated circuit chip and the wire bonds; a first plurality of interconnect vias between the signal layer and the voltage layers for providing electrical connectivity between the voltage layers and the signal layer located adjacent to the integrated circuit chip; a plurality of package leads electrically connected to the signal layer for providing electrical connectivity between the electronic component and the package; and a second plurality of interconnect vias between the signal layer and the voltage layers for providing electrical connectivity between the package leads and the first and second voltage layers, the second plurality of vias being located proximate to the outer perimeter of the substrate.

Claim 28

An integrated circuit package for housing an integrated circuit chip and providing electrical connectivity of data signals and voltage signals between the integrated-circuit chip and an electronic component, the package comprising: a carrier substrate having a first surface including a die attach region and a signal layer region; an integrated circuit chip affixed to the die attach region, the integrated circuit chip including a plurality of bonding pads; at least three conductive layers on the signal layer region of the substrate for conducting electrical signals, the conductive layers comprising at least a first voltage layer adjacent to the substrate for providing a first reference voltage signal to the integrated circuit chip, a second voltage layer for providing a second reference voltage signal to the integrated circuit chip, and a single signal layer, the first voltage layer comprising a reference ground layer adjacent to the substrate for providing a ground signal to the integrated circuit chip and the second voltage layer comprising a reference voltage layer closely coupled to the reference ground layer thereby providing a predetermined significant level of decoupling capacitance therebetween; a plurality of bond wires having a predetermined length, each bond wire electrically connecting a single bonding pad of the integrated circuit chip to a single bonding pad of the signal layer, each bond wire being disposed parallel one to each other to route all of the data signals on the single signal layer to minimize the length of the bond wires; at least first and second dielectric layers each dielectric layer having a predetermined dielectric constant the at least first dielectric layer being disposed between the first and second voltage layers, and the at least second dielectric layer being disposed between the second voltage layer and the signal layer, the dielectric constant of the at least second dielectric layer being less than the dielectric constant of the first layer, wherein the second dielectric layer comprises cyanate ester impregnated expanded polytetrafluoroethylene; and a plurality of electrical connections for interconnecting the chip bonding pads with the electronic component by way of at least one of the conductive layers for conducting electrical signals therebetween.

Claim 29

An integrated circuit package for housing an integrated circuit chip and providing electrical connectivity of data signals and voltage signals between the integrated-circuit chip and an electronic component, the package comprising: a carrier substrate having a first surface including a die attach region and a signal layer region; an integrated circuit chip affixed to the die attach region, the integrated circuit chip including a plurality of bonding pads; at least three conductive layers on the signal layer region of the substrate for conducting electrical signals, the conductive layers comprising at least a first voltage layer adjacent to the substrate for providing a first reference voltage signal to the integrated circuit chip, a second voltage layer for providing a second reference voltage signal to the integrated circuit chip, and a single signal layer, the first voltage layer comprising a reference ground layer adjacent to the substrate for providing a ground signal to the integrated circuit chip and the second voltage layer comprising a reference voltage layer closely coupled to the reference ground layer thereby providing a predetermined significant level of decoupling capacitance therebetween; a plurality of bond wires having a predetermined length, each bond wire electrically connecting a single bonding pad of the integrated circuit chip to a single bonding pad of the signal layer, each bond wire being disposed parallel one to each other to route all of the data signals on the single signal layer to minimize the length of the bond wires; at least first and second dielectric layers each dielectric layer having a predetermined dielectric constant the at least first dielectric layer being disposed between the first and second voltage layers, and the at least second dielectric layer being disposed between the second voltage layer and the signal layer, the dielectric constant of the at least second dielectric layer being less than the dielectric constant of the first layer, wherein the second dielectric layer comprises cyanate ester impregnated expanded polytetrafluoroethylene; and a plurality of electrical connections for interconnecting the chip bonding pads with the electronic component by way of at least one of the conductive layers for conducting electrical signals therebetween.