Patent US5521432A successfully refreshed from Google Patents.
US5521432A
Expired / Lapsed
US
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Semiconductor device having improved leads comprising palladium plated nickel
Assignee: Fujitsu Ltd
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Filing: 1994-06-01
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Granted: 1996-05-28
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Expires: 2014-06-01
Abstract
Abstract A semiconductor device includes a semiconductor chip, a die-pad on which the semiconductor chip is mounted, a package encapsulating the die pad and the semiconductor chip, and a plurality of leads electrically connected to the semiconductor chip and projecting from the package, wherein each of the leads has a lead body made of pure nickel (Ni) having a purity equal to or greater than 99% and a first film formed thereon, the first film being made of palladium (Pd).
Inventors
- 👤 Kazuto Tsuji
- 👤 Yoshiyuki Yoneda
- 👤 Junichi Kasai
- 👤 Michio Sono
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 18:40
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/40; H10W70/456; H10W70/457; H05; H05K; H05K3/00; H05K3/30; H05K3/32; H05K3/34; H05K3/341; H05K3/3421; H05K3/3426; H10W70/411; H10W90/00; H10W90/811; H05K2201/00; H05K2201/10; H05K2201/10613; H05K2201/10621; H05K2201/10689; H05K2201/10742; H05K2201/10886; H05K2201/10909; H05K2201/20; H05K2201/2081; H10W72/00; H10W72/071; H10W72/075; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W72/541; H10W72/5445; H10W72/90; H10W72/951; H10W72/952; H10W74/00; H10W90/701; H10W90/731; H10W90/736; H10W90/751; H10W90/756; Y; Y02; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
77 words
A semiconductor device comprising: a semiconductor chip; a die-pad on which the semiconductor chip is mounted; a package encapsulating said die-pad and said semiconductor chip; and a plurality of leads electrically connected to said semiconductor chip and projecting from said package, each of said leads comprising: a lead body made of pure nickel (Ni) having a purity equal to or greater than 99%, and a first film formed on said lead body, and made of palladium (Pd).
Claim 2
Dependent Claim
77 words
A semiconductor device comprising: a semiconductor chip; a die-pad on which the semiconductor chip is mounted; a package encapsulating said die-pad and said semiconductor chip; and a plurality of leads electrically connected to said semiconductor chip and projecting from said package, each of said leads comprising: a lead body made of pure nickel (Ni) having a purity equal to or greater than 99%, and a first film formed on said lead body, and made of palladium (Pd).
Claim 3
Dependent Claim
25 words
A semiconductor device as claimed in claim 1, wherein said first film made of palladium (Pd) has a thickness in the range of 0.1-1.5 μm.
Claim 4
Dependent Claim
38 words
A semiconductor device as claimed in claim 1, wherein at least a part of said lead body defines a solder contact surface and at least a part of said first film is formed on the solder contact surface.
Claim 5
Dependent Claim
59 words
A semiconductor device as claimed in claim 1, wherein said first film made of palladium (Pd) is formed on the entire surface of said lead body except cut surfaces of said leads, said cut surfaces being formed on each of said leads after forming said first film made of palladium (Pd) on said entire surface of said lead body.
Claim 6
Dependent Claim
28 words
A semiconductor device as claimed in claim 1, wherein said package is made of material having a thermal expansion coefficient approximately equal to that of pure nickel (Ni).
Claim 7
Dependent Claim
43 words
A semiconductor device as claimed in claim 1, wherein said die-pad comprises a die-pad body made of pure nickel (Ni) having a purity equal to or greater than 99% and a second film formed on the die-pad body and made of palladium (Pd).
Claim 8
Dependent Claim
25 words
A semiconductor device as claimed in claim 6, wherein said second film, made of palladium, (Pd) has a thickness in a range of 0.1-1.5 μm.
Claim 9
Dependent Claim
26 words
A semiconductor device as claimed in claim 6, wherein said second film made of palladium (Pd) is formed on the whole surface of said die-pad body.
Claim 10
Dependent Claim
51 words
A semiconductor device as claimed in claim 6, wherein at least a part of said lead body defines a contact surface to which a wire, connected to said semiconductor chip mounted on said die-pad, is to be bonded and a film made of silver (Ag) is formed on the contact surface.
Claim 11
Dependent Claim
24 words
A semiconductor device as claimed in claim 9, wherein said film, made of silver (Ag), has a thickness in a range of 1.0-10 μm.
Claim 12
Dependent Claim
51 words
A semiconductor device as claimed in claim 6, wherein at least a part of said lead body defines a contact surface to which a wire, connected to said semiconductor chip mounted on said die-pad, is to be bonded and a film made of gold (Au) is formed on the contact surface.
Claim 13
Dependent Claim
24 words
A semiconductor device as claimed in claim 11, wherein said film, made of gold (Au), has a thickness in a range of 0.1-1.5 μm.
Claim 14
Dependent Claim
35 words
An electrical lead comprising: a lead body made of pure nickel having a purity equal to or greater than 99%; and a palladium (Pd) film formed on at least a portion of the lead body.
Claim 15
Dependent Claim
35 words
An electrical lead comprising: a lead body made of pure nickel having a purity equal to or greater than 99%; and a palladium (Pd) film formed on at least a portion of the lead body.
Claim 16
Dependent Claim
20 words
An electrical lead as claimed in claim 13, wherein said film has a thickness in the range of 0.1-1.5 μm.
Claim 17
Dependent Claim
40 words
An electrical lead as claimed in claim 13, wherein the electrical lead has improved resistivity to salt spray rusting compared to electrical leads having lead bodies made of an iron-nickel alloy and having a film of palladium (Pd) formed thereon.
Claim 18
Dependent Claim
41 words
An electrical lead as claimed in claim 13, wherein the electrical lead has improved resistivity to salt spray rusting compared to electrical leads having lead bodies made of a copper (Cu) alloy and having a film of palladium (Pd) formed thereon.
Claim 19
Dependent Claim
78 words
A semiconductor device comprising: a package comprising a semiconductor chip having at least one electrical lead connected to the semiconductor chip, a portion of each said at least one electrical lead projecting from said package; and each said at least one electrical lead comprises: a lead body made of pure nickel having a purity equal to or greater than 99%, and a palladium (Pd) film formed on at least a part of said portion of said lead body.
Claim 20
Dependent Claim
78 words
A semiconductor device comprising: a package comprising a semiconductor chip having at least one electrical lead connected to the semiconductor chip, a portion of each said at least one electrical lead projecting from said package; and each said at least one electrical lead comprises: a lead body made of pure nickel having a purity equal to or greater than 99%, and a palladium (Pd) film formed on at least a part of said portion of said lead body.
Claim 21
Dependent Claim
20 words
A semiconductor device as claimed in claim 17, wherein said film has a thickness in the range of 0.1-1.5 μm.
Claim 22
Dependent Claim
40 words
A semiconductor device as claimed in claim 17, wherein the electrical lead has improved resistivity to salt spray rusting compared to electrical leads having lead bodies made of an iron-nickel alloy and having a film of palladium (Pd) formed thereon.
Claim 23
Dependent Claim
41 words
A semiconductor device as claimed in claim 17, wherein the electrical lead has improved resistivity to salt spray rusting compared to electrical leads having lead bodies made of a copper (Cu) alloy and having a film of palladium (Pd) formed thereon.
Claim 24
Dependent Claim
38 words
An electrical lead comprising: a lead body made of pure nickel having a purity equal to or greater than 99%; and a film formed on at least a portion of the lead body and made of palladium (Pd).
Claim 25
Dependent Claim
38 words
An electrical lead comprising: a lead body made of pure nickel having a purity equal to or greater than 99%; and a film formed on at least a portion of the lead body and made of palladium (Pd).
Claim 26
Dependent Claim
20 words
An electrical lead as claimed in claim 21, wherein said film has a thickness in the range of 0.1-1.5 μm.
Claim 27
Dependent Claim
40 words
An electrical lead as claimed in claim 21, wherein the electrical lead has improved resistivity to salt spray rusting compared to electrical leads having lead bodies made of an iron-nickel alloy and having a film of palladium (Pd) formed thereon.
Claim 28
Dependent Claim
41 words
An electrical lead as claimed in claim 21, wherein the electrical lead has improved resistivity to salt spray rusting compared to electrical leads having lead bodies made of a copper (Cu) alloy and having a film of palladium (Pd) formed thereon.
Claim 29
Independent Claim
121 words
A device comprising: a die pad; a plurality of leads, each lead comprising an elongated lead body having inner and outer lead parts respectively extending to and defining an inner end and an outer end of the lead body; a package encapsulating the die pad and the inner lead parts of the plurality of leads with the respective inner ends positioned adjacent to but spaced from corresponding portions of the die-pad; and each of the leads comprising: a lead body made of pure nickel (Ni) having a purity equal to or greater than 99%, and a first film, made of palladium (Pd), formed on at least the outer lead part of each lead body and extending outwardly from the encapsulating package.
Claim 30
Independent Claim
121 words
A device comprising: a die pad; a plurality of leads, each lead comprising an elongated lead body having inner and outer lead parts respectively extending to and defining an inner end and an outer end of the lead body; a package encapsulating the die pad and the inner lead parts of the plurality of leads with the respective inner ends positioned adjacent to but spaced from corresponding portions of the die-pad; and each of the leads comprising: a lead body made of pure nickel (Ni) having a purity equal to or greater than 99%, and a first film, made of palladium (Pd), formed on at least the outer lead part of each lead body and extending outwardly from the encapsulating package.
Claim 31
Dependent Claim
28 words
A semiconductor device as claimed in claim 25, wherein said package is made of material having a thermal expansion coefficient approximately equal to that of pure nickel (Ni).
Claim 32
Dependent Claim
42 words
A semiconductor device as claimed in claim 26, wherein said die-pad comprises: a die-pad body made of pure nickel (Ni) having a purity equal to or greater than 99%; and a second film, made of palladium (Pd), formed on the die-pad body.
Claim 33
Dependent Claim
25 words
A semiconductor device as claimed in claim 27, wherein said second film, made of palladium (Pd), has a thickness in a range of 0.1-1.5 μm.
Claim 34
Dependent Claim
26 words
A semiconductor device as claimed in claim 27, wherein said second film, made of palladium (Pd), is formed on the whole surface of said die-pad body.
Claim 35
Dependent Claim
51 words
A semiconductor device as claimed in claim 27, wherein at least a part of said lead body defines a contact surface to which a wire, connected to said semiconductor chip mounted on said die-pad, is to be bonded and a film made of silver (Ag) is formed on the contact surface.
Claim 36
Dependent Claim
24 words
A semiconductor device as claimed in claim 30, wherein said film, made of silver (Ag), has a thickness in a range of 1.0-10 μm.
Claim 37
Dependent Claim
34 words
A device as recited in claim 27, wherein a surface portion of each outer lead part defines a contact surface, at least a part of said first film being formed on said contact surface.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-05-28 | 1999-11-27 | 2000-05-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-05-28 | 2003-11-27 | 2004-05-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-05-28 | 2007-11-27 | 2008-05-28 | $7700.00 | Window Closed / Lapsed |