EP0250146A1
Expired / Lapsed
EP
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Palladium plated lead frame for integrated circuit
Assignee: Texas Instruments Inc
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Filing: 1987-06-09
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Granted: —
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Expires: 2007-06-09
Abstract
Abstract A palladium plated lead frame (2) for integrated circuit devices in which a plurality of lead frames are flood plated with a substantially uniformly thick layer of palladium (6) over all the surfaces of each lead frame.
Inventors
- 👤 Neil Mclellan
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 17:01
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/40; H10W70/456; H10W70/457; H10W70/01; H10W70/04; H10W70/451; H10W90/00; H10W90/811; C; C23; C23C; C23C18/00; C23C18/16; C23C18/1601; C23C18/1633; H10W72/00; H10W72/071; H10W72/075; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W72/59; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/951; H10W72/952; H10W90/701; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
66 words
A lead frame comprising: palladium, or palladium-nickel alloy, plated lead means for electrical connection to electrical components, wherein the palladium, or palladium-nickel alloy, plated layer is the outermost plated layer; and semiconductor support means for electrically contacting a semiconductor integrated circuit; wherein the palladium, or palladium-nickel alloy, plated lead means include palladium, or palladium-nickel alloy, plated external lead means for electrical connection to external electrical parts.
Claim 2
Dependent Claim
66 words
A lead frame comprising: palladium, or palladium-nickel alloy, plated lead means for electrical connection to electrical components, wherein the palladium, or palladium-nickel alloy, plated layer is the outermost plated layer; and semiconductor support means for electrically contacting a semiconductor integrated circuit; wherein the palladium, or palladium-nickel alloy, plated lead means include palladium, or palladium-nickel alloy, plated external lead means for electrical connection to external electrical parts.
Claim 3
Dependent Claim
33 words
The lead frame according to Claim 1 wherein the palladium, or palladium-nickel alloy, plated lead means include: palladium, or palladium-nickel alloy, plated lead end means for electrical connection to the semiconductor integrated circuit.
Claim 4
Dependent Claim
32 words
The lead frame according to Claim 2 wherein the semiconductor support means is palladium, or palladium-nickel alloy, plated, and wherein the palladium, or palladium-nickel alloy, plated layer is the outermost plated layer.
Claim 5
Dependent Claim
51 words
The lead frame according to Claim 3 wherein the palladium, or palladium-nickel alloy, plated lead means is a plurality of palladium, or palladium-nickel alloy, plated lead means for electrically connecting the plurality of palladium, or palladium-nickel alloy, plated lead end means to a plurality of points on the semiconductor integrated circuit.
Claim 6
Dependent Claim
46 words
An integrated circuit device comprising: the lead frame of Claim 4; semiconductor integrated circuit means; and a plurality of wire means for electrically connecting the plurality of palladium, or palladium-nickel alloy, plated lead end means to a plurality of points on the semiconductor integrated circuit means.
Claim 7
Dependent Claim
28 words
The integrated circuit device according to Claim 5 wherein the plurality of wire means are bonded to the plurality of palladium, or palladium-nickel alloy, plated lead end means.
Claim 8
Dependent Claim
29 words
The integrated circuit device according to Claim 6 further comprising: electrically conductive adhesive means for electrically and mechanically connecting the semiconductor integrated circuit means to the semiconductor support means.
Claim 9
Dependent Claim
25 words
The integrated circuit device according to Claim 7 further comprising: a packaging medium for supporting and protecting the lead frame and semiconductor integrated circuit means.
Claim 10
Dependent Claim
21 words
The integrated circuit device according to Claim 8 wherein the plurality of wire means are a plurality of gold wire means.
Claim 11
Dependent Claim
14 words
The integrated circuit device according to Claim 9 wherein the packaging medium is plastic.
Claim 12
Dependent Claim
46 words
The lead frame according to Claim 4 wherein the palladium, or palladium-nickel alloy, plated lead means and the palladium, or palladium-nickel alloy, plated semiconductor support means include nickel plated layer means for preparing the lead means and semiconductor support means for palladium, or palladium-nickel alloy, plating.
Claim 13
Independent Claim
49 words
A method of plating a lead frame comprising the steps of: Flood plating a lead frame with an outermost plated layer of palladium, or palladium-nickel alloy, to form the outer surface of the lead frame, wherein the lead frame includes a plurality of leads and a semiconductor support means.
Claim 14
Independent Claim
49 words
A method of plating a lead frame comprising the steps of: Flood plating a lead frame with an outermost plated layer of palladium, or palladium-nickel alloy, to form the outer surface of the lead frame, wherein the lead frame includes a plurality of leads and a semiconductor support means.
Claim 15
Dependent Claim
39 words
The method of plating a lead frame as set forth in Claim 12, further comprising the steps of: preparing the lead frame for the palladium, or palladium-nickel alloy, plating step by first flood plating the lead frame with nickel.
Claim 16
Dependent Claim
40 words
The method of plating a lead frame as set forth in Claim 12 wherein the palladium, or palladium-nickel alloy, plating step is carried out to provide a plated layer which is substantially uniform in thickness for good package stress characteristics.
Claim 17
Dependent Claim
42 words
The method of plating a lead frame as set forth in Claim 13 wherein the nickel plating step and the palladium, or palladium-nickel alloy, plating step are carried out to provide plated layers of substantially uniform thickness for good package stress characteristics.
References Cited (Backward Citations)
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