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US5500393A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for fabricating a schottky junction

Assignee: Sumitomo Electric Industries Ltd
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Filing: 1994-01-21
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Granted: 1996-03-19
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Expires: 2014-01-21
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Abstract

Abstract The characteristics of a Schottky junction between diamond and metal causes the diode using the Schottky junction to have a large leakage reverse current and n-value far bigger than 1. A surface of diamond on which a Schottky junction shall be formed is pretreated by oxygen plasma or halogen plasma. The oxygen plasma or hydrogen plasma improves the surface state of the diamond by decoupling the surface C-C bonds and endowing the resulting extra bonds with hydrogen atoms, normalizing the superlattice structure at the surface. Pretreatment of the diamond by the oxygen or halogen plasma improves the diode properties; decreasing reverse current, increasing forward current and decreasing the n-value nearer to 1.

Inventors

  • 👤 Yoshiki Nishibayashi
  • 👤 Hiromu Shiomi
  • 👤 Naoji Fujimori

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-04 23:41
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/50; H10P70/52; H10D; H10D64/00; H10D64/01; H10D64/012; H10D64/0121; H10D64/0122; H10D64/60; H10D64/64; H10D62/00; H10D62/80; H10D62/83; H10D62/8303; Y; Y10; Y10S; Y10S148/00; Y10S148/017

Claims Analysis

Total Claims: 23
Claim 1
Independent Claim 104 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing a halogen plasma by exciting a gas comprising one of CCl 4 and HCl; pretreating a surface of the diamond with the halogen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 2
Independent Claim 104 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing a halogen plasma by exciting a gas comprising one of CCl 4 and HCl; pretreating a surface of the diamond with the halogen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 3
Dependent Claim 40 words
The method according to claim 1, wherein the step of pretreating the surface of the diamond includes steps of: breaking carbon bonds at the surface of the diamond to create dangling bonds; and adding hydrogen atoms to the dangling bonds.
Claim 4
Independent Claim 99 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing a halogen plasma by exciting a gas comprising HF; pretreating a surface of the diamond with the halogen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 5
Independent Claim 99 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing a halogen plasma by exciting a gas comprising HF; pretreating a surface of the diamond with the halogen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 6
Dependent Claim 40 words
The method according to claim 3, wherein the step of pretreating the surface of the diamond includes steps of: breaking carbon bonds at the surface of the diamond to create dangling bonds; and adding hydrogen atoms to the dangling bonds.
Claim 7
Independent Claim 102 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing a halogen plasma by exciting a gas comprising H 2 and HCl; pretreating a surface of the diamond with the halogen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 8
Independent Claim 102 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing a halogen plasma by exciting a gas comprising H 2 and HCl; pretreating a surface of the diamond with the halogen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 9
Dependent Claim 40 words
The method according to claim 5, wherein the step of pretreating the surface of the diamond includes steps of: breaking carbon bonds at the surface of the diamond to create dangling bonds; and adding hydrogen atoms to the dangling bonds.
Claim 10
Independent Claim 104 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing a halogen plasma by exciting a gas comprising H 2 and CF 4 ; pretreating a surface of the diamond with the halogen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 11
Independent Claim 104 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing a halogen plasma by exciting a gas comprising H 2 and CF 4 ; pretreating a surface of the diamond with the halogen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 12
Dependent Claim 40 words
The method according to claim 7, wherein the step of pretreating the surface of the diamond includes steps of: breaking carbon bonds at the surface of the diamond to create dangling bonds; and adding hydrogen atoms to the dangling bonds.
Claim 13
Independent Claim 104 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing an oxygen plasma by exciting a gas comprising H 2 and O 2 ; pretreating a surface of the diamond with the halogen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 14
Independent Claim 104 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing an oxygen plasma by exciting a gas comprising H 2 and O 2 ; pretreating a surface of the diamond with the halogen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 15
Dependent Claim 40 words
The method according to claim 9, wherein the step of pretreating the surface of the diamond includes steps of: breaking carbon bonds at the surface of the diamond to create dangling bonds; and adding hydrogen atoms to the dangling bonds.
Claim 16
Independent Claim 81 words
A method for fabricating a Schottky junction comprising the steps of: producing a plasma by exciting a mixture of gas consisting of H 2 and O 2 , 0.1 to 10 percent of a volume of the mixture of gas being O 2 ; pretreating a surface of diamond with the plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure; and depositing Schottky electrodes directly on the pretreated surface of the diamond.
Claim 17
Independent Claim 81 words
A method for fabricating a Schottky junction comprising the steps of: producing a plasma by exciting a mixture of gas consisting of H 2 and O 2 , 0.1 to 10 percent of a volume of the mixture of gas being O 2 ; pretreating a surface of diamond with the plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure; and depositing Schottky electrodes directly on the pretreated surface of the diamond.
Claim 18
Dependent Claim 40 words
The method according to claim 11, wherein the step of pretreating the surface of the diamond includes steps of: breaking carbon bonds at the surface of the diamond to create dangling bonds; and adding hydrogen atoms to the dangling bonds.
Claim 19
Independent Claim 105 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing an oxygen plasma by exciting a gas comprising H 2 O and CO 2 ; pretreating a surface of the diamond with the halogen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 20
Independent Claim 105 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing an oxygen plasma by exciting a gas comprising H 2 O and CO 2 ; pretreating a surface of the diamond with the halogen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 21
Dependent Claim 40 words
The method according to claim 13, wherein the step of pretreating the surface of the diamond includes steps of: breaking carbon bonds at the surface of the diamond to create dangling bonds; and adding hydrogen atoms to the dangling bonds.
Claim 22
Independent Claim 106 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing one of a halogen plasma and an oxygen plasma; pretreating a surface of the diamond with the one of said halogen plasma and said oxygen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 23
Independent Claim 106 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing one of a halogen plasma and an oxygen plasma; pretreating a surface of the diamond with the one of said halogen plasma and said oxygen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.

References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1999-03-19 1999-09-18 2000-03-19 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2003-03-19 2003-09-18 2004-03-19 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2007-03-19 2007-09-18 2008-03-19 $7700.00 Window Closed / Lapsed

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