Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
104 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing a halogen plasma by exciting a gas comprising one of CCl 4 and HCl; pretreating a surface of the diamond with the halogen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 2
Independent Claim
104 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing a halogen plasma by exciting a gas comprising one of CCl 4 and HCl; pretreating a surface of the diamond with the halogen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 3
Dependent Claim
40 words
The method according to claim 1, wherein the step of pretreating the surface of the diamond includes steps of: breaking carbon bonds at the surface of the diamond to create dangling bonds; and adding hydrogen atoms to the dangling bonds.
Claim 4
Independent Claim
99 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing a halogen plasma by exciting a gas comprising HF; pretreating a surface of the diamond with the halogen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 5
Independent Claim
99 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing a halogen plasma by exciting a gas comprising HF; pretreating a surface of the diamond with the halogen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 6
Dependent Claim
40 words
The method according to claim 3, wherein the step of pretreating the surface of the diamond includes steps of: breaking carbon bonds at the surface of the diamond to create dangling bonds; and adding hydrogen atoms to the dangling bonds.
Claim 7
Independent Claim
102 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing a halogen plasma by exciting a gas comprising H 2 and HCl; pretreating a surface of the diamond with the halogen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 8
Independent Claim
102 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing a halogen plasma by exciting a gas comprising H 2 and HCl; pretreating a surface of the diamond with the halogen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 9
Dependent Claim
40 words
The method according to claim 5, wherein the step of pretreating the surface of the diamond includes steps of: breaking carbon bonds at the surface of the diamond to create dangling bonds; and adding hydrogen atoms to the dangling bonds.
Claim 10
Independent Claim
104 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing a halogen plasma by exciting a gas comprising H 2 and CF 4 ; pretreating a surface of the diamond with the halogen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 11
Independent Claim
104 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing a halogen plasma by exciting a gas comprising H 2 and CF 4 ; pretreating a surface of the diamond with the halogen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 12
Dependent Claim
40 words
The method according to claim 7, wherein the step of pretreating the surface of the diamond includes steps of: breaking carbon bonds at the surface of the diamond to create dangling bonds; and adding hydrogen atoms to the dangling bonds.
Claim 13
Independent Claim
104 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing an oxygen plasma by exciting a gas comprising H 2 and O 2 ; pretreating a surface of the diamond with the halogen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 14
Independent Claim
104 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing an oxygen plasma by exciting a gas comprising H 2 and O 2 ; pretreating a surface of the diamond with the halogen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 15
Dependent Claim
40 words
The method according to claim 9, wherein the step of pretreating the surface of the diamond includes steps of: breaking carbon bonds at the surface of the diamond to create dangling bonds; and adding hydrogen atoms to the dangling bonds.
Claim 16
Independent Claim
81 words
A method for fabricating a Schottky junction comprising the steps of: producing a plasma by exciting a mixture of gas consisting of H 2 and O 2 , 0.1 to 10 percent of a volume of the mixture of gas being O 2 ; pretreating a surface of diamond with the plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure; and depositing Schottky electrodes directly on the pretreated surface of the diamond.
Claim 17
Independent Claim
81 words
A method for fabricating a Schottky junction comprising the steps of: producing a plasma by exciting a mixture of gas consisting of H 2 and O 2 , 0.1 to 10 percent of a volume of the mixture of gas being O 2 ; pretreating a surface of diamond with the plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure; and depositing Schottky electrodes directly on the pretreated surface of the diamond.
Claim 18
Dependent Claim
40 words
The method according to claim 11, wherein the step of pretreating the surface of the diamond includes steps of: breaking carbon bonds at the surface of the diamond to create dangling bonds; and adding hydrogen atoms to the dangling bonds.
Claim 19
Independent Claim
105 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing an oxygen plasma by exciting a gas comprising H 2 O and CO 2 ; pretreating a surface of the diamond with the halogen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 20
Independent Claim
105 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing an oxygen plasma by exciting a gas comprising H 2 O and CO 2 ; pretreating a surface of the diamond with the halogen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 21
Dependent Claim
40 words
The method according to claim 13, wherein the step of pretreating the surface of the diamond includes steps of: breaking carbon bonds at the surface of the diamond to create dangling bonds; and adding hydrogen atoms to the dangling bonds.
Claim 22
Independent Claim
106 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing one of a halogen plasma and an oxygen plasma; pretreating a surface of the diamond with the one of said halogen plasma and said oxygen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.
Claim 23
Independent Claim
106 words
A method for fabricating a Schottky junction comprising diamond and a metal layer deposited directly on the diamond, the method comprising the steps of: producing one of a halogen plasma and an oxygen plasma; pretreating a surface of the diamond with the one of said halogen plasma and said oxygen plasma to change an original superlattice structure of the surface of the diamond to a normal lattice structure, the original superlattice structure having a first periodicity twice as long as a second periodicity of the normal lattice structure; and depositing the metal layer directly on the pretreated surface of the diamond to form the Schottky junction.