Patent US383567A successfully refreshed from Google Patents.
Patent US5496776A successfully refreshed from Google Patents.
US5496776A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Spin-on-glass planarization process with ion implantation
Assignee: United Microelectronics Corp
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Filing: 1995-04-27
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Granted: 1996-03-05
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Expires: 2015-04-27
Abstract
Abstract A spin-on-glass sandwich layer planarization process where the spin-on-glass layer within the sandwich has been ion implanted through its entire thickness. The spin-on-glass sandwich layer is formed by successive deposition of a silicon oxide layer, followed by a spin-on-glass layer. The spin-on-glass layer is then thermally cured and ion implanted throughout its entire thickness. Various combinations of implanting ions, ion doses and implantation energies are used to implant the spin-on-glass layer. Finally, a second silicon oxide layer is formed upon the surface of the spin-on-glass layer to complete the spin-on-glass sandwich layer.
Inventors
- 👤 Sun-Cheih Chien
- 👤 Chen-Chiu Hsue
- 👤 Yu-Ju Liu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 22:19
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
124 words
A method for forming a moisture sorption and outgassing resistant spin-on-glass sandwich layer for integrated circuit applications, comprising: forming a first layer of silicon oxide over an integrated circuit surface; depositing a spin-on-glass layer over the first silicon oxide layer; thermally curing the spin-on-glass layer to form a cured spin-on-glass layer; implanting ions selected from the group of ions consisting of Monoatomic Boron, Nitrogen, Oxygen and Monoatomic Fluorine ions into and through the cured spin-on-glass layer, the ions being of sufficient dosage and energy to cause structural changes within the complete depth of the cured spin-on-glass layer, which structural changes cause the cured spin-on-glass layer to be moisture sorption and outgassing resistant; and depositing a second silicon oxide layer over the cured span-on-glass layer.
Claim 2
Independent Claim
124 words
A method for forming a moisture sorption and outgassing resistant spin-on-glass sandwich layer for integrated circuit applications, comprising: forming a first layer of silicon oxide over an integrated circuit surface; depositing a spin-on-glass layer over the first silicon oxide layer; thermally curing the spin-on-glass layer to form a cured spin-on-glass layer; implanting ions selected from the group of ions consisting of Monoatomic Boron, Nitrogen, Oxygen and Monoatomic Fluorine ions into and through the cured spin-on-glass layer, the ions being of sufficient dosage and energy to cause structural changes within the complete depth of the cured spin-on-glass layer, which structural changes cause the cured spin-on-glass layer to be moisture sorption and outgassing resistant; and depositing a second silicon oxide layer over the cured span-on-glass layer.
Claim 3
Dependent Claim
16 words
The method of claim 1 wherein the ion implant dose is between 1E15 and 5E16 ions/cm2.
Claim 4
Dependent Claim
16 words
The method of claim 1 wherein the ion implant energy is between 50 and 200 keV.
Claim 5
Dependent Claim
29 words
The method of claim 1 wherein the spin-on-glass layer is cured at a temperature of 400 to 500 degrees centigrade for a time period of 30 to 120 minutes.
Claim 6
Independent Claim
122 words
A method for forming a moisture sorption and outgassing resistant spin-on-glass sandwich layer for integrated circuit applications, comprising: forming a first layer of silicon oxide over an integrated circuit surface; depositing a spin-on-glass layer over the first silicon oxide layer; implanting ions selected from the group of ions consisting of Boron, Nitrogen, Oxygen and Fluorine ions into and through the spin-on-glass layer, the ions being of sufficient dosage and energy to cause structural changes within the complete depth of the spin-on-glass layer, which structural changes cause the spin-on-glass layer to be not susceptible to moisture sorption and outgassing; thermally curing then the spin-on-glass layer to form a cured spin-on-glass layer; and depositing a second silicon oxide layer over the cured spin-on-glass layer.
Claim 7
Independent Claim
122 words
A method for forming a moisture sorption and outgassing resistant spin-on-glass sandwich layer for integrated circuit applications, comprising: forming a first layer of silicon oxide over an integrated circuit surface; depositing a spin-on-glass layer over the first silicon oxide layer; implanting ions selected from the group of ions consisting of Boron, Nitrogen, Oxygen and Fluorine ions into and through the spin-on-glass layer, the ions being of sufficient dosage and energy to cause structural changes within the complete depth of the spin-on-glass layer, which structural changes cause the spin-on-glass layer to be not susceptible to moisture sorption and outgassing; thermally curing then the spin-on-glass layer to form a cured spin-on-glass layer; and depositing a second silicon oxide layer over the cured spin-on-glass layer.
Claim 8
Dependent Claim
32 words
The method of claim 5 wherein the ion implant dosage is between 1E15 and 5E16 ions/cm2, and the thermal curing is done at a temperature of between 400 C. to 500 C.
Claim 9
Dependent Claim
16 words
The method of claim 6 wherein the ion implant energy is between 50 and 200 keV.
Claim 10
Independent Claim
193 words
A method of providing a moisture sorption and outgassing resistant spin-on-glass layer of a planarized MOSFET multilayered metal structure comprising: providing a MOSFET semiconductor structure in and on a semiconductor substrate; providing a first conductive layer for contacting the active elements of the MOSFET structure; providing a first insulator layer over the first conductive layer; depositing a spin-on-glass layer over the first insulator layer; curing the spin-on-glass layer to form a cured spin-on-glass layer; implanting of ions selected from the group of ions consisting of Monoatomic Boron, Nitrogen, Oxygen and Monoatomic Fluorine ions into and through the cured spin-on-glass layer, the ions being applied in sufficient dosage and energy to cause structural changes within the complete depth of the cured spin-on-glass layer, which structural changes cause the cured spin-on-glass layer to be not susceptible to moisture sorption and outgassing; forming a second insulator layer over the ion implanted cured spin-on-glass layer; forming openings through the first and second insulator layers and the cured spin-on-glass layer to the conductive layer; and depositing a second conductive layer into the openings to make contact to the first conductive layer and complete the MOSFET multilayer metal structure.
Claim 11
Independent Claim
193 words
A method of providing a moisture sorption and outgassing resistant spin-on-glass layer of a planarized MOSFET multilayered metal structure comprising: providing a MOSFET semiconductor structure in and on a semiconductor substrate; providing a first conductive layer for contacting the active elements of the MOSFET structure; providing a first insulator layer over the first conductive layer; depositing a spin-on-glass layer over the first insulator layer; curing the spin-on-glass layer to form a cured spin-on-glass layer; implanting of ions selected from the group of ions consisting of Monoatomic Boron, Nitrogen, Oxygen and Monoatomic Fluorine ions into and through the cured spin-on-glass layer, the ions being applied in sufficient dosage and energy to cause structural changes within the complete depth of the cured spin-on-glass layer, which structural changes cause the cured spin-on-glass layer to be not susceptible to moisture sorption and outgassing; forming a second insulator layer over the ion implanted cured spin-on-glass layer; forming openings through the first and second insulator layers and the cured spin-on-glass layer to the conductive layer; and depositing a second conductive layer into the openings to make contact to the first conductive layer and complete the MOSFET multilayer metal structure.
Claim 12
Dependent Claim
27 words
The method of claim 8 wherein: the ion implantation dosage is between 1E15 and 5E16 ions/cm2; and the ion implantation energy is between 50 and 200 keV.
Claim 13
Dependent Claim
22 words
The method of claim 8 wherein the spin-on-glass layer is cured at 400 to 500 degrees centigrade for 30 to 120 minutes.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-03-05 | 1999-09-04 | 2000-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-03-05 | 2003-09-04 | 2004-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-03-05 | 2007-09-04 | 2008-03-05 | $7700.00 | Window Closed / Lapsed |