Patent US5492854A successfully refreshed from Google Patents.
US5492854A
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Method of manufacturing semiconductor device
Assignee: NEC Electronics Corp
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Filing: 1994-12-14
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Granted: 1996-02-20
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Expires: 2014-12-14
Abstract
Abstract A method of manufacturing a semiconductor device includes the step of forming a capacitor. The step includes the step of forming a lower electrode constituted by a polysilicon film which selectively covers a surface of a predetermined insulating film on a semiconductor substrate, and the step of performing heating in an atmosphere containing an SiH 4 gas and removal of a native oxide film on a surface of the lower electrode, and then performing formation of a silicon nitride film without being exposed to an oxygen atmosphere.
Inventors
- 👤 Koichi Ando
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 12:37
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10D1/692; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; Y; Y10; Y10S; Y10S148/00; Y10S148/014; Y10S148/017; Y10S148/112; Y10S438/00; Y10S438/913; Y10S438/974
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
74 words
A method of manufacturing a semiconductor device, which comprises the steps of: forming a capacitor including forming a lower electrode constituted by a polysilicon film which selectively covers a surface of an insulating film on a semiconductor silicon substrate, heating in an atmosphere containing a SiH 4 gas and removing a native oxide film on a surface of the lower electrode, and then forming a silicon nitride film without exposure to an oxygen atmosphere.
Claim 2
Independent Claim
74 words
A method of manufacturing a semiconductor device, which comprises the steps of: forming a capacitor including forming a lower electrode constituted by a polysilicon film which selectively covers a surface of an insulating film on a semiconductor silicon substrate, heating in an atmosphere containing a SiH 4 gas and removing a native oxide film on a surface of the lower electrode, and then forming a silicon nitride film without exposure to an oxygen atmosphere.
Claim 3
Dependent Claim
30 words
A method according to claim 1, wherein the steps of removing the native oxide film and of forming the silicon nitride film are sequentially performed in the same reaction furnace.
Claim 4
Dependent Claim
27 words
A method according to claim 2, wherein the silicon nitride film is formed using a gas mixture of the SiH 4 gas and an NH 3 gas.
Claim 5
Dependent Claim
65 words
A method according to claim 3, wherein the step of forming the silicon nitride film is performed under conditions that the NH 3 gas is supplied at 1 l per minute, the SiH 4 gas is supplied at 20 ml per minute, and the silicon substrate is heated to a temperature of 700° to 800° C. at a pressure of 133 Pa to 1,330 Pa.
Claim 6
Dependent Claim
30 words
A method according to claim 2, wherein the step of removing the native oxide film is performed in an atmosphere containing the SiH 4 gas and an H 2 gas.
Claim 7
Dependent Claim
27 words
A method according to claim 5, wherein the H 2 gas is supplied at 10 l per minute and a pressure of 133 Pa to 1,330 Pa.
Claim 8
Dependent Claim
27 words
A method according to claim 1, wherein the silicon nitride film is formed using a gas mixture of the SiH 4 gas and an NH 3 gas.
Claim 9
Dependent Claim
30 words
A method according to claim 1, wherein the step of removing the native oxide film is performed in an atmosphere containing the SiH 4 gas and an H 2 gas.
Claim 10
Dependent Claim
27 words
A method according to claim 8, wherein the H 2 gas is supplied at 10 l per minute and a pressure of 133 Pa to 1,330 Pa.
Claim 11
Dependent Claim
55 words
A method according to claim 1, wherein the step of removing the native oxide film is performed under conditions that the SiH 4 gas is supplied at 1 ml per minute, and the silicon substrate is heated to a temperature of not more than 800° C. at a pressure of not more than 0.13 Pa.
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