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Patent US5492606A successfully refreshed from Google Patents.
US5492606A
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Method for self-stabilizing deposition of a stoichiometric compound by reactive sputtering
Assignee: HEF R&D (HYDROMECANIQUE ET FROTTEMENT)
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Filing: 1993-12-23
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Granted: 1996-02-20
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Expires: 2013-12-23
Abstract
Abstract Method for self-stabilizing deposition of a stoichiometric compound by reactive sputtering using a cold plasma. A reactive gas is supplied to a target, the instantaneous power applied to the target is cyclically reduced and increased at a frequency sufficiently low that a reaction between the target material and the reactive gas takes place on the surface of the target, and the product of the reaction is then sputtered off the surface of the target and onto a substrate. The alternating decrease and increase of the instantaneous power applied to the target at low frequency provides for self-stabilizing deposition of the reaction product on the substrate.
Inventors
- 👤 Bruno Stauder
- 👤 Frederic Perry
- 👤 Claude Frantz
- 👤 Alain Billard
- 👤 Philippe Pigeat
- 👤 Gerard Henrion
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:41
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/54; C23C14/0021; C23C14/0036
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
104 words
A method for sputtering a reaction product of a target material and a reactive gas on a substrate by means of a cold plasma used for sputtering the target, said method comprising the steps of: supplying the gas to the target; and cyclically reducing and increasing the instantaneous power applied to the target at a frequency sufficiently low so as to produce a reaction between the target material and the reactive gas on the surface of the target and then to sputter the product of said reaction from the surface of the target, whereby self-stabilizing deposition of the product onto the substrate is obtained.
Claim 2
Independent Claim
104 words
A method for sputtering a reaction product of a target material and a reactive gas on a substrate by means of a cold plasma used for sputtering the target, said method comprising the steps of: supplying the gas to the target; and cyclically reducing and increasing the instantaneous power applied to the target at a frequency sufficiently low so as to produce a reaction between the target material and the reactive gas on the surface of the target and then to sputter the product of said reaction from the surface of the target, whereby self-stabilizing deposition of the product onto the substrate is obtained.
Claim 3
Dependent Claim
26 words
The method according to claim 1, wherein the concentration of a component of the reactive gas in the deposit is a deposit parameter that is controlled.
Claim 4
Dependent Claim
27 words
The method according to claim 1, in which the frequency of said reduction and increase of the instantaneous power is between about 0.1 Hz and 1000 Hz.
Claim 5
Dependent Claim
30 words
The method according to claim 3, in which the duration of the reduction and increase of instantaneous power is between 100/f and 800/f milliseconds, in which f is said frequency.
Claim 6
Dependent Claim
27 words
The method according to claim 4, in which said frequency is between 1 Hz and 100 Hz and the duration is between 1 ms and 800 ms.
Claim 7
Dependent Claim
29 words
The method according to claim 1, in which said reduction of power is an interruption of the power applied to the plasma which causes an extinction of the plasma.
Claim 8
Independent Claim
127 words
A method of reactive magnetron sputtering for coating a substrate with a reaction product produced by a metallic or semi-conductive target that is sputtered by plasma discharge in the presence of reactive gas, said method comprising the steps of: providing a sufficient plasma density such that the reactive gas reacts with the surface of the target; increasing the plasma density to sputter the product of said reaction; decreasing the plasma density so as to cause the reactive gas to react with the target material on the surface of the target again; and alternating said increase and decrease at a frequency sufficiently low so as to produce a self-stabilizing deposition of reaction product on the substrate, whereby growth of a coating having a predetermined stoichiometric composition is achieved.
Claim 9
Independent Claim
127 words
A method of reactive magnetron sputtering for coating a substrate with a reaction product produced by a metallic or semi-conductive target that is sputtered by plasma discharge in the presence of reactive gas, said method comprising the steps of: providing a sufficient plasma density such that the reactive gas reacts with the surface of the target; increasing the plasma density to sputter the product of said reaction; decreasing the plasma density so as to cause the reactive gas to react with the target material on the surface of the target again; and alternating said increase and decrease at a frequency sufficiently low so as to produce a self-stabilizing deposition of reaction product on the substrate, whereby growth of a coating having a predetermined stoichiometric composition is achieved.
Claim 10
Dependent Claim
25 words
The method of claim 7 wherein the concentration of a component of the reactive gas in the deposit is a deposit parameter that is controlled.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-02-19 | 1999-08-21 | 2000-02-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-02-19 | 2003-08-21 | 2004-02-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-02-19 | 2007-08-21 | 2008-02-20 | $7700.00 | Window Closed / Lapsed |