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US5180476A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for producing transparent conductive films

Assignee: Ulvac Inc
•
Filing: 1991-02-26
•
Granted: 1993-01-19
•
Expires: 2011-02-26
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Abstract

Abstract A method of producing by sputtering an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film according to the present invention uses the addition of a donor element, if needed. The sputtering is carried out by maintaining an intensity of a magnetic field on a surface of a target at 600 Oe or greater as well as by charging the target with a DC electric field superimposed by an RF electric field. An apparatus for producing an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O base transparent conductive film uses the addition of a donor element, if needed. The apparatus has a vacuum chamber adapted to support therein a substrate and a target in an opposed relationship for forming by sputtering the transparent conductive film on the substrate by plasma discharge generated therebetween. The apparatus has a device for forming a magnetic field having a predetermined intensity of 600 Oe or greater on a surface of the target, a DC power supply for charging the target with a DC electric field, and an RF power supply for charging the target with an RF electric field superimposed on the DC electric field.

Inventors

  • 👤 Satoru Ishibashi
  • 👤 Kyuzo Nakamura
  • 👤 Yasushi Higuchi
  • 👤 Takashi Komatsu
  • 👤 Yuzo Murata
  • 👤 Yoshifumi Ota

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 02:45
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/086; C23C14/22; C23C14/34; C23C14/35; H; H10; H10F; H10F71/00; H10F71/138; Y; Y02; Y02E; Y02E10/00; Y02E10/50

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 101 words
A method of producing an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film with an optional additional of a donor element, said method comprising the steps of: maintaining an intensity of a magnetic field on a surface of a target at a level of at least 600 Oe; and sputtering the target so as to form the transparent conductive film on a substrate by charging the target, simultaneously with said maintaining of the magnetic filed intensity, with a DC electric field superimposed with an RF electric field so as to lower the sputtering voltage to 250 volts or less.
Claim 2
Independent Claim 101 words
A method of producing an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film with an optional additional of a donor element, said method comprising the steps of: maintaining an intensity of a magnetic field on a surface of a target at a level of at least 600 Oe; and sputtering the target so as to form the transparent conductive film on a substrate by charging the target, simultaneously with said maintaining of the magnetic filed intensity, with a DC electric field superimposed with an RF electric field so as to lower the sputtering voltage to 250 volts or less.
Claim 3
Dependent Claim 39 words
A method as set forth in claim 1, wherein the target comprises at least one material selected from the group consisting of In, Sn, Zn, Cd-Sn and Cd-In based metals, and In, Sn, Zn, Cd-Sn and Cd-In sintered oxides.
Claim 4
Dependent Claim 40 words
A method as set forth in claim 2, wherein the material for the target has a donor element added therein, the donor element comprising at least one material selected from the group consisting of Sn, Sb, In, Al, and Si.

References Cited (Backward Citations)

JPS60132319A Cited
JPS63109164A Cited
US4849081A Cited
JPH02232358A Cited
US5026471A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1996-01-19 1996-07-20 1997-01-19 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2000-01-19 2000-07-20 2001-01-19 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2004-01-19 2004-07-20 2005-01-19 $7700.00 Window Closed / Lapsed

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