Abstract The plasma dry cleaning rate of semiconductor process chamber walls can be improved by placing a non-gaseous dry cleaning enhancement material in the position which was occupied by the workpiece during semiconductor processing. The non-gaseous dry cleaning enhancement material is either capable of generating dry cleaning reactive species and/or of reducing the consumption of the dry cleaning reactive species generated from the plasma gas feed to the process chamber. When process chamber non-volatile contaminant deposits are removed from plasma process chamber surfaces during plasma dry cleaning by placing a non-gaseous source of reactive-species-generating material within the plasma process chamber, the non-gaseous source of reactive-species-generating material need not be located upon or adjacent the workpiece support platform: however, this location provides excellent cleaning results in typical process chamber designs.
A method for the plasma cleaning of surfaces of a semiconductor process chamber having involatile contaminants deposited thereon, said process comprising the steps of: (a) removing any semiconductor workpiece present from said semiconductor process chamber; (b) placing a non-gaseous source of reactive-species-generating material within said processing chamber, at a location which had been occupied by a workpiece during processing of said workpiece; (c) exposing said non-gaseous source of reactive-species-generating material to a plasma generated from a gas fed into said processing chamber, whereby volatile reactive species are generated; and (d) contacting said surfaces of said semiconductor processing chamber with a plasma comprising said volatile reactive species generated in step (c) from said non-gaseous source, whereby at least a portion of said involatile contaminants residing on said surfaces are converted to volatile molecules.
Claim 2
Independent Claim
132 words
A method for the plasma cleaning of surfaces of a semiconductor process chamber having involatile contaminants deposited thereon, said process comprising the steps of: (a) removing any semiconductor workpiece present from said semiconductor process chamber; (b) placing a non-gaseous source of reactive-species-generating material within said processing chamber, at a location which had been occupied by a workpiece during processing of said workpiece; (c) exposing said non-gaseous source of reactive-species-generating material to a plasma generated from a gas fed into said processing chamber, whereby volatile reactive species are generated; and (d) contacting said surfaces of said semiconductor processing chamber with a plasma comprising said volatile reactive species generated in step (c) from said non-gaseous source, whereby at least a portion of said involatile contaminants residing on said surfaces are converted to volatile molecules.
Claim 3
Dependent Claim
33 words
The method of claim 1, wherein said non-gaseous source of reactive-species-generating material is provided in an amount so that said reactive species generation generates at least one complete plasma cleaning of said surfaces.