Atomic layer epitaxy method and apparatus

Claim 1

An atomic layer epitaxy method for obtaining a high-purity atomic layer comprising the steps of: energizing at a first energization region an organometal consisting of a metal and an alkyl group and having a self-limiting mechanism; flowing said energized organometal in a pipe provided at said first region so that unbound metal, detached from the organometal in which all bonds between the metal and alkyl group are cut, is removed by deposition to an inner wall of said pipe thereby preventing the unbound metal from reducing the effect of the self-limiting mechanism, at least one bond between the metal and the alkyl group of the organometal is dissociated and only an energized source having at least one bond is remaining; and flowing said energized source to a second region in which a substrate is set, so that said energized source and a hydride or organometal molecules consisting of a different metal are alternatively supplied on a substrate thereby growing the high-purity atomic layer on said substrate.