US5025751A
Expired / Lapsed
US
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Solid film growth apparatus
Assignee: Hitachi Ltd
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Filing: 1989-06-14
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Granted: 1991-06-25
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Expires: 2009-06-14
Abstract
Abstract A solid film forming apparatus, e.g., an MO-MBE (Metal-Organic Molecular Beam Epitaxy) apparatus, wherein evacuatable containers isolated from a growth chamber by a switching device and connected to raw material gas introduction pipings are provided between the growth chamber for a solid film, e.g., a compound semiconductor, and raw material gas introduction pipings. Growth of the solid film is controlled by opening and closing the switching device and evacuating the container at least while the switching device is closed during the growth of the solid film. An undesired influence on the growing film due to residual gas in the containers which are not used for growth can be prevented and, hence, interception and introduction of the raw material gas into the growth chamber can be performed with remarkably high controllability, and films of superior abruptness of the interface between films, e.g., the heterojunction of the compound semiconductor, can be obtained.
Inventors
- 👤 Shinichiro Takatani
- 👤 Shigeo Goto
- 👤 Masahiko Kawata
- 👤 Kenji Hiruma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:30
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45502; C23C16/4551; C30; C30B; C30B25/00; C30B25/02; C30B25/14; C30B29/00; C30B29/10; C30B29/40; Y; Y10; Y10S; Y10S148/00; Y10S148/169
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
93 words
A compound semiconductor growth apparatus for growth of a compound semiconductor using an organometallic gas as a raw material gas in a vacuum satisfying molecular flow conditions, comprising: a first container for growth of the compound semiconductor, switching devices for controlling introduction of the raw material gas, second containers isolated from the gas in said first container by said switching devices, raw material gas-introduction pipings connected to said second containers, and at least one evacuation facility for evacuation of and separately and directly connected to each of said first container and second containers.
Claim 2
Dependent Claim
93 words
A compound semiconductor growth apparatus for growth of a compound semiconductor using an organometallic gas as a raw material gas in a vacuum satisfying molecular flow conditions, comprising: a first container for growth of the compound semiconductor, switching devices for controlling introduction of the raw material gas, second containers isolated from the gas in said first container by said switching devices, raw material gas-introduction pipings connected to said second containers, and at least one evacuation facility for evacuation of and separately and directly connected to each of said first container and second containers.
Claim 3
Dependent Claim
25 words
A compound semiconductor growth apparatus according to claim 1, wherein the evacuation facility can evacuate the second containers throughout the growth of the compound semiconductor.
Claim 4
Dependent Claim
29 words
A compound semiconductor growth apparatus according to claim 1, wherein the evacuation facility which evacuates the second containers provides a degree of ultimate vacuum higher than 1×10 -8 Torr.
Claim 5
Dependent Claim
33 words
A compound semiconductor growth apparatus according to claim 1, wherein a plurality of evacuation facilities are provided and separate evacuation facilities are connected to each of said first container and said second containers.
Claim 6
Dependent Claim
54 words
A compound semiconductor growth apparatus according to claim 1, wherein said switching devices are located so as to enable said raw material gas to be completely intercepted and not introduced into said first container, and wherein said raw material gases may be evacuated from said second container by said at least one evacuation facility.
Claim 7
Dependent Claim
133 words
A metal-organic beam epitaxy apparatus for growing a compound semiconductor using at least one organometallic gas as a raw gas, comprising: a first chamber for growth of the compound semiconductor, which can be evacuated to satisfy molecular flow conditions; at least one second chamber having an opening which opens into the first chamber; switching means provided at the opening of each second chamber, for isolating the at least one second chamber from the first chamber, and for controlling the introduction of the raw material gas from the at least one second chamber to the first chamber; raw material gas introducing pipings connected to each second chamber; and at least one evacuation means for evacuating and being separately and directly connected to each of the first chamber and the at least one second chamber.
Claim 8
Dependent Claim
133 words
A metal-organic beam epitaxy apparatus for growing a compound semiconductor using at least one organometallic gas as a raw gas, comprising: a first chamber for growth of the compound semiconductor, which can be evacuated to satisfy molecular flow conditions; at least one second chamber having an opening which opens into the first chamber; switching means provided at the opening of each second chamber, for isolating the at least one second chamber from the first chamber, and for controlling the introduction of the raw material gas from the at least one second chamber to the first chamber; raw material gas introducing pipings connected to each second chamber; and at least one evacuation means for evacuating and being separately and directly connected to each of the first chamber and the at least one second chamber.
Claim 9
Dependent Claim
21 words
An apparatus according to claim 6, wherein a separate evacuation means is connected to the first chamber and each second chamber.
Claim 10
Dependent Claim
25 words
An apparatus according to claim 6, wherein the evacuation means can evacuate the at least one second chamber throughout the growth of the compound semiconductor.
Claim 11
Dependent Claim
28 words
An apparatus according to claim 6, wherein the evacuation means for the at least one second chamber provides a degree of ultimate vacuum higher than 1×10 -8 Torr.
Claim 12
Dependent Claim
13 words
An apparats according to claim 6, wherein the switching means are gate valves.
Claim 13
Dependent Claim
25 words
An apparatus according to claim 6, further including cracking cells in contact with the gas introduction pipings to enable cracking of the raw material gases.
Claim 14
Dependent Claim
22 words
An apparatus according to claim 6, wherein the evacuation means evacuates the first chamber and the at least one second chamber simultaneously.
Claim 15
Dependent Claim
52 words
An apparatus according to claim 6, wherein the evacuation means evacuates the at least one second chamber when the at least one second chamber is isolated from the first chamber by the switching means provided at the opening of each second chamber, while molecular flow conditions are maintained in the first chamber.
Claim 16
Dependent Claim
50 words
An apparatus according to claim 6, wherein said switching means are located such that said raw material gas may be completely intercepted and not introduced into said first chamber, and wherein said at least one evacuation means can evacuate all of the raw material gas flowing into said second chamber.
Claim 17
Dependent Claim
104 words
A compound semiconductor growth apparatus for growth of a compound semiconductor using at least one raw material gas in a vacuum satisfying molecular flow conditions, comprising: a first container for growth of the compound semiconductor, at least one switching device for controlling introduction of the raw material gas, at least one second container isolated from the gas in said first container by said switching device, at least one raw material gas-introduction piping connected to said second container, and at least one evacuation facility for evacuation of and separately and directly connected to each of said first container and said at least one second container.
Claim 18
Dependent Claim
104 words
A compound semiconductor growth apparatus for growth of a compound semiconductor using at least one raw material gas in a vacuum satisfying molecular flow conditions, comprising: a first container for growth of the compound semiconductor, at least one switching device for controlling introduction of the raw material gas, at least one second container isolated from the gas in said first container by said switching device, at least one raw material gas-introduction piping connected to said second container, and at least one evacuation facility for evacuation of and separately and directly connected to each of said first container and said at least one second container.
Claim 19
Dependent Claim
28 words
A compound semiconductor growth apparatus according to claim 15, wherein the evacuation facility can evacuate the at least one second container throughout the growth of the compound semiconductor.
Claim 20
Dependent Claim
36 words
A compound semiconductor growth apparatus according to claim 15, wherein a plurality of evacuation facilities are provided and separate evacuation facilities are connected to each of the first container and the at least one second container.
Claim 21
Dependent Claim
57 words
A compound semiconductor growth apparatus according to claim 15, wherein said switching devices are located so as the enable said raw material gas to be completely intercepted and not introduced into said first container, and wherein said raw material gases may be evacuated from said at least one second container by said at least one evacuation facility.
Claim 22
Dependent Claim
102 words
A semiconductor growth apparatus for growth of a semiconductor using at least one raw material gas in a vacuum satisfying molecular flow conditions, comprising: a first container for growth of the compound semiconductor, at least one switching device for controlling introduction of the raw material gas, at least one second container isolated from the gas in said first container by said switching device, at least one raw material gas-introduction piping connected to said second container, and at least one evacuation facility for evacuation of and separately and directly connected to each of said first container and said at least one second container.
Claim 23
Dependent Claim
102 words
A semiconductor growth apparatus for growth of a semiconductor using at least one raw material gas in a vacuum satisfying molecular flow conditions, comprising: a first container for growth of the compound semiconductor, at least one switching device for controlling introduction of the raw material gas, at least one second container isolated from the gas in said first container by said switching device, at least one raw material gas-introduction piping connected to said second container, and at least one evacuation facility for evacuation of and separately and directly connected to each of said first container and said at least one second container.
Claim 24
Dependent Claim
26 words
A semiconductor growth apparatus according to claim 19, wherein the evacuation facility can evacuate the at least one second container throughout the growth of the semiconductor.
Claim 25
Dependent Claim
36 words
A semiconductor growth apparatus according to claim 19, wherein a plurality of evacuation facilities are provided and wherein separate evacuation facilities are connected to each of said first container and said at least one second container.
Claim 26
Dependent Claim
56 words
A semiconductor growth apparatus according to claim 19, wherein said switching devices are located so as to enable said raw material gas to be completely intercepted and not introduced into said first container, and wherein said raw material gases may be evacuated from said at least one second container by said at least one evacuation facility.
Claim 27
Dependent Claim
104 words
A solid film forming apparatus for growth of a solid film using at least one raw material gas in a vacuum satisfying molecular flow conditions, comprising: a first container for growth of the solid film, at least one switching device for controlling introduction of the raw material gas, at least one second container isolated from the gas in said first container by said switching device, at least one raw material gas-introduction piping connected to said second container, and at least one evacuation facility for evacuation of and separately and directly connected to each of said first container and said at least one second container.
Claim 28
Dependent Claim
104 words
A solid film forming apparatus for growth of a solid film using at least one raw material gas in a vacuum satisfying molecular flow conditions, comprising: a first container for growth of the solid film, at least one switching device for controlling introduction of the raw material gas, at least one second container isolated from the gas in said first container by said switching device, at least one raw material gas-introduction piping connected to said second container, and at least one evacuation facility for evacuation of and separately and directly connected to each of said first container and said at least one second container.
Claim 29
Dependent Claim
28 words
A solid film forming apparatus according to claim 23, wherein the evacuation facility can evacuate the at least one second container throughout the growth of the solid film.
Claim 30
Dependent Claim
36 words
A solid film forming apparatus according to claim 23, wherein a plurality of evacuation facilities are provided and separate evacuation facilities are connected to each of said first container and said at least one second container.
Claim 31
Dependent Claim
57 words
A solid film forming apparatus according to claim 23, wherein said switching devices are located so as to enable said raw material gas to be completely intercepted and not introduced into said first container, and wherein said raw material gases may be evacuated from said at least one second container by said at least one evacuation facility.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-06-24 | 1994-12-24 | 1995-06-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-06-24 | 1998-12-24 | 1999-06-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-06-24 | 2002-12-24 | 2003-06-25 | $7700.00 | Window Closed / Lapsed |